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Jinsong Xu

Publications and source records attributed to Jinsong Xu.

18 recordsLinked to original sources

Automorphism groups and Homogeneous fibrations on projective varieties with nef anticanonical divisors

We explore the homogeneous structures of Albanese morphisms and maximal rationally chain-connected fibrations of algebraic varieties with nef anticanonical divisors. Furthermore, we show that there exists a natural group homomorphism associated with a maximal rationally chain-connected fibration, which induces the Chevalley decomposition of $\operatorname{Aut}^0$ up to an isogeny. This result is analogous to a similar theorem of Nishi and Matsumura for Albanese morphisms. In addition, we reprove Nishi and Matsumura's theorem using the modern language of algebraic geometry.

math.AG

Electrical Seebeck-Contrast Observation of Magnon Hall Effect in Topological Ferromagnet Lu$_2$V$_2$O$_7$/Heavy Metal Heterostructures

The observation of the magnon Hall effect (MHE) has relied solely on the challenging measurement of the thermal Hall conductivity. Here, we report a highly sensitive electrical Seebeck-contrast method for the observation of MHE in Lu$_2$V$_2$O$_7$/heavy metal heterostructures, that is highly desirable for the exploration of new MHE materials and their applications. Using measuring wires with very different Seebeck coefficients, we established a general method that can separate contributions (e.g., MHE) that generates a lateral temperature drop, from those [e.g., anomalous Nernst effect (ANE) and spin Seebeck effect (SSE)] that generate a lateral electric field. We show that a suitable heavy metal overlayer can eliminate the inherent ANE and SSE signals from the semiconducting Lu$_2$V$_2$O$_7$. The MHE in Lu$_2$V$_2$O$_7$ is quasi-isotropic among crystals with different orientations. In addition to the previously reported transverse MHE under an in-plane temperature gradient, we have uncovered longitudinal MHE under an out-of-plane temperature gradient.

cond-mat.mtrl-sci

Vector spin Seebeck effect and spin swapping effect in antiferromagnetic insulators with non-collinear spin structure

Antiferromagnets (AFs) are prospective for next-generation high-density and high-speed spintronic applications due to their negligible stray field and ultrafast spin dynamics, notwithstanding the challenges in detecting and manipulating AF order with no magnetization (M = 0). Among the AFs, non-collinear AFs are of particular interest because of their unique properties arising from the non-collinear spin structure and the small magnetization M. In this work, we describe the recently observed vector spin Seebeck effect in non-collinear LuFeO$_3$, where the magneto-thermovoltage under an in-plane temperature gradient, not previously observed, is consistent with the predicted spin swapping effect. Our results shed light on the importance of the non-collinear spin structure in the emerging spin phenomena in non-collinear AFs and offer a new class of materials for AF spintronics and spin caloritronics.

cond-mat.mtrl-sci

Observation of Vector Spin Seebeck Effect in a Noncollinear Antiferromagnet

Spintronic phenomena to date have been established in magnets with collinear moments, where the spin injection through the spin Seebeck effect (SSE) is always along the out-of-plane direction. Here, we report the observation of a vector SSE in a noncollinear antiferromagnet (AF) LuFeO$_3$, where temperature gradient along the out-of-plane and also the in-plane directions can both inject a pure spin current and generate a voltage in the heavy metal via the inverse spin Hall effect (ISHE). We show that the thermovoltages are due to the magnetization from canted spins in LuFeO$_3$. Furthermore, in contrast to the challenges of generating, manipulating and detecting spin current in collinear AFs, the vector SSE in LuFeO$_3$ is readily viable in zero magnetic field and can be controlled by a small magnetic field of about 150 Oe at room temperature. The noncollinear AFs expand new realms for exploring spin phenomena and provide a new route to low-field antiferromagnetic spin caloritronics and magnonics.

cond-mat.mtrl-sci

Voltage Controlled Spin-Orbit Torque Switching in W/CoFeB/MgO

Voltage control of magnetism and spintronics have been highly desirable, but rarely realized. In this work, we show voltage-controlled spin-orbit torque (SOT) switching in W/CoFeB/MgO films with perpendicular magnetic anisotropy (PMA) with voltage administered through SrTiO3 with a high dielectric constant. We show that a DC voltage can significantly lower PMA by 45%, reduce switching current by 23%, and increase the damping-like torque as revealed by the first and second-harmonic measurements. These are characteristics that are prerequisites for voltage-controlled and voltage-select SOT switching spintronic devices.

cond-mat.mtrl-sci

Large anomalous Nernst effect in a van der Waals ferromagnet Fe$_3$GeTe$_2$

Anomalous Nernst effect, a result of charge current driven by temperature gradient, provides a probe of the topological nature of materials due to its sensitivity to the Berry curvature near the Fermi level. Fe3GeTe2, one important member of the recently discovered two-dimensional van der Waals magnetic materials, offers a unique platform for anomalous Nernst effect because of its metallic and topological nature. Here, we report the observation of large anomalous Nernst effect in Fe3GeTe2. The anomalous Hall angle and anomalous Nernst angle are about 0.07 and 0.09 respectively, far larger than those in common ferromagnets. By utilizing the Mott relation, these large angles indicate a large Berry curvature near the Fermi level, consistent with the recent proposal for Fe3GeTe2 as a topological nodal line semimetal candidate. Our work provides evidence of Fe3GeTe2 as a topological ferromagnet, and demonstrates the feasibility of using two-dimensional magnetic materials and their band topology for spin caloritronics applications.

cond-mat.mtrl-sci

Homogeneous fibrations on log Calabi-Yau varieties

We prove a structure theorem for the Albanese maps of varieties with Q-linearly trivial log canonical divisors. Our start point is the action of a nonlinear algebraic group on a projective variety.

math.AG

Multi-pseudo Regularized Label for Generated Data in Person Re-Identification

Sufficient training data normally is required to train deeply learned models. However, due to the expensive manual process for labelling large number of images, the amount of available training data is always limited. To produce more data for training a deep network, Generative Adversarial Network (GAN) can be used to generate artificial sample data. However, the generated data usually does not have annotation labels. To solve this problem, in this paper, we propose a virtual label called Multi-pseudo Regularized Label (MpRL) and assign it to the generated data. With MpRL, the generated data will be used as the supplementary of real training data to train a deep neural network in a semi-supervised learning fashion. To build the corresponding relationship between the real data and generated data, MpRL assigns each generated data a proper virtual label which reflects the likelihood of the affiliation of the generated data to pre-defined training classes in the real data domain. Unlike the traditional label which usually is a single integral number, the virtual label proposed in this work is a set of weight-based values each individual of which is a number in (0,1] called multi-pseudo label and reflects the degree of relation between each generated data to every pre-defined class of real data. A comprehensive evaluation is carried out by adopting two state-of-the-art convolutional neural networks (CNNs) in our experiments to verify the effectiveness of MpRL. Experiments demonstrate that by assigning MpRL to generated data, we can further improve the person re-ID performance on five re-ID datasets, i.e., Market-1501, DukeMTMC-reID, CUHK03, VIPeR, and CUHK01. The proposed method obtains +6.29%, +6.30%, +5.58%, +5.84%, and +3.48% improvements in rank-1 accuracy over a strong CNN baseline on the five datasets respectively, and outperforms state-of-the-art methods.

cs.CV

Finite $p$-groups of birational automorphisms and characterizations of rational varieties

We study finite $p$-subgroups of birational automorphism groups. By virtue of boundedness theorem of Fano varieties, we prove that there exists a constant $R(n)$ such that a rationally connected variety of dimension $n$ over an algebraically closed field is rational if its birational automorphism group contains a $p$-subgroups of maximal rank for $p > R(n)$. Some related applications on Jordan property are discussed.

math.AG

Strong and Tunable Spin Lifetime Anisotropy in Dual-Gated Bilayer Graphene

We report the discovery of a strong and tunable spin lifetime anisotropy with excellent spin lifetimes up to 7.8 ns in dual-gated bilayer graphene. Remarkably, this realizes the manipulation of spins in graphene by electrically-controlled spin-orbit fields, which is unexpected due to graphene's weak intrinsic spin-orbit coupling. We utilize both the in-plane magnetic field Hanle precession and oblique Hanle precession measurements to directly compare the lifetimes of out-of-plane vs. in-plane spins. We find that near the charge neutrality point, the application of a perpendicular electric field opens a band gap and generates an out-of-plane spin-orbit field that stabilizes out-of-plane spins against spin relaxation, leading to a large spin lifetime anisotropy. This intriguing behavior occurs because of the unique spin-valley coupled band structure of bilayer graphene. Our results demonstrate the potential for highly tunable spintronic devices based on dual-gated 2D materials.

cond-mat.mes-hall

Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts

Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin transport in such encapsulated graphene-based spin valves with one-dimensional (1D) ferromagnetic edge contacts. An electrostatic backgate tunes the Fermi level of graphene to probe different energy levels of the spin-polarized density of states (DOS) of the 1D ferromagnetic contact, which interact through a magnetic proximity effect (MPE) that induces ferromagnetism in graphene. In contrast to conventional spin valves, where switching between high- and low-resistance configuration requires magnetization reversal by an applied magnetic field or a high-density spin-polarized current, we provide an alternative path with the gate-controlled spin inversion in graphene. The resulting tunable MPE employing a simple ferromagnetic metal holds promise for spintronic devices and to realize exotic topological states, from quantum spin Hall and quantum anomalous Hall effects, to Majorana fermions and skyrmions.

cond-mat.mes-hall

Giant spin-splitting and gap renormalization driven by trions in single-layer WS$_2$/h-BN heterostructures

In two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs), new electronic phenomena such as tunable band gaps and strongly bound excitons and trions emerge from strong many-body effects, beyond spin-orbit coupling- and lattice symmetry-induced spin and valley degrees of freedom. Combining single-layer (SL) TMDs with other 2D materials in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these many-body effects via engineered interlayer interactions. Here, we employ micro-focused angle-resolved photoemission spectroscopy (microARPES) and in-situ surface doping to manipulate the electronic structure of SL WS$_2$ on hexagonal boron nitride (WS$_2$/h-BN). Upon electron doping, we observe an unexpected giant renormalization of the SL WS$_2$ valence band (VB) spin-orbit splitting from 430~meV to 660~meV, together with a band gap reduction of at least 325~meV, attributed to the formation of trionic quasiparticles. These findings suggest that the electronic, spintronic and excitonic properties are widely tunable in 2D TMD/h-BN heterostructures, as these are intimately linked to the quasiparticle dynamics of the materials.

cond-mat.mtrl-sci

NaSn2As2: An Exfoliatable Layered van der Waals Zintl Phase

The discovery of new families of exfoliatable 2D crystals that have diverse sets of electronic, optical, and spin-orbit coupling properties, enables the realization of unique physical phenomena in these few-atom thick building blocks and in proximity to other materials. Herein, using NaSn2As2 as a model system, we demonstrate that layered Zintl phases having the stoichiometry ATt2Pn2 (A = Group 1 or 2 element, Tt = Group 14 tetrel element and Pn = Group 15 pnictogen element) and feature networks separated by van der Waals gaps can be readily exfoliated with both mechanical and liquid-phase methods. We identified the symmetries of the Raman active modes of the bulk crystals via polarized Raman spectroscopy. The bulk and mechanically exfoliated NaSn2As2 samples are resistant towards oxidation, with only the top surface oxidizing in ambient conditions over a couple of days, while the liquid-exfoliated samples oxidize much more quickly in ambient conditions. Employing angle-resolved photoemission spectroscopy (ARPES), density functional theory (DFT), and transport on bulk and exfoliated samples, we show that NaSn2As2 is a highly conducting 2D semimetal, with resistivities on the order of 10-6 Ω m. Due to peculiarities in the band structure, the dominating p-type carriers at low temperature are nearly compensated by the opening of n-type conduction channels as temperature increases. This work further expands the family of exfoliatable 2D materials to layered van der Waals Zintl phases, opening up opportunities in electronics and spintronics.

cond-mat.mtrl-sci

Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves

Two dimensional (2D) materials provide a unique platform for spintronics and valleytronics due to the ability to combine vastly different functionalities into one vertically-stacked heterostructure, where the strengths of each of the constituent materials can compensate for the weaknesses of the others. Graphene has been demonstrated to be an exceptional material for spin transport at room temperature, however it lacks a coupling of the spin and optical degrees of freedom. In contrast, spin/valley polarization can be efficiently generated in monolayer transition metal dichalcogenides (TMD) such as MoS2 via absorption of circularly-polarized photons, but lateral spin or valley transport has not been realized at room temperature. In this letter, we fabricate monolayer MoS2/few-layer graphene hybrid spin valves and demonstrate, for the first time, the opto-valleytronic spin injection across a TMD/graphene interface. We observe that the magnitude and direction of spin polarization is controlled by both helicity and photon energy. In addition, Hanle spin precession measurements confirm optical spin injection, spin transport, and electrical detection up to room temperature. Finally, analysis by a one-dimensional drift-diffusion model quantifies the optically injected spin current and the spin transport parameters. Our results demonstrate a 2D spintronic/valleytronic system that achieves optical spin injection and lateral spin transport at room temperature in a single device, which paves the way for multifunctional 2D spintronic devices for memory and logic applications.

cond-mat.mes-hall

Spatially Resolved Electronic Properties of Single-Layer WS$_2$ on Transition Metal Oxides

There is a substantial interest in the heterostructures of semiconducting transition metal dichalcogenides (TMDCs) amongst each other or with arbitrary materials, through which the control of the chemical, structural, electronic, spintronic, and optical properties can lead to a change in device paradigms. A critical need is to understand the interface between TMDCs and insulating substrates, for example high-$κ$ dielectrics, which can strongly impact the electronic properties such as the optical gap. Here we show that the chemical and electronic properties of the single-layer (SL) TMDC, WS$_2$, can be transferred onto high-$κ$ transition metal oxide substrates TiO$_2$ and SrTiO$_3$. The resulting samples are much more suitable for measuring their electronic and chemical structures with angle-resolved photoemission than their native-grown SiO$_2$ substrates. We probe the WS$_2$ on the micron scale across 100-micron flakes, and find that the occupied electronic structure is exactly as predicted for freestanding SL WS$_2$ with a strong spin-orbit splitting of 420~meV and a direct band gap at the valence band maximum. Our results suggest that TMDCs can be combined with arbitrary multi-functional oxides, which may introduce alternative means of controlling the optoelectronic properties of such materials.

cond-mat.mtrl-sci

Nanosecond spin relaxation times in single layer graphene spin valves with hexagonal boron nitride tunnel barriers

We present an experimental study of spin transport in single layer graphene using atomic sheets of hexagonal boron nitride (h-BN) as a tunnel barrier for spin injection. While h-BN is expected to be favorable for spin injection, previous experimental studies have been unable to achieve spin relaxation times in the nanosecond regime, suggesting potential problems originating from the contacts. Here, we investigate spin relaxation in graphene spin valves with h-BN barriers and observe room temperature spin lifetimes in excess of a nanosecond, which provides experimental confirmation that h-BN is indeed a good barrier material for spin injection into graphene. By carrying out measurements with different thicknesses of h-BN, we show that few layer h-BN is a better choice than monolayer for achieving high non-local spin signals and longer spin relaxation times in graphene.

cond-mat.mes-hall