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Jinxing Zhang

Publications and source records attributed to Jinxing Zhang.

22 records · Page 2Linked to original sources

Domain and Phase De-strain - Formation of Ferroelastic Domain Structures

Phase decomposition is a well-known process leading to the formation of two-phase mixtures. Here we show that a strain imposed on a ferroelastic crystal promotes the formation of mixed phases and domains, i.e., domain and phase de-strain with local strains determined by a common tangent construction on the free energy versus strain curves. It is demonstrated that a domain structure can be understood using the concepts of domain/phase rule, lever rule, coherent and incoherent de-strain within the de-strain model description, in a complete analogy to phase decomposition. The proposed de-strain model is validated using phase-field simulations and experimental observations of PbTiO_3 and BiFeO_3 thin films as examples. The de-strain model provides a simple tool to guide and design domain structures of ferroelastic systems.

cond-mat.mtrl-sci↗

A Nanoscale Shape Memory Oxide

Stimulus-responsive shape memory materials have attracted tremendous research interests recently, with much effort focused on improving their mechanical actuation. Driven by the needs of nanoelectromechnical devices, materials with large mechanical strain particularly at nanoscale are therefore desired. Here we report on the discovery of a large shape memory effect in BiFeO3 at the nanoscale. A maximum strain of up to ~14% and a large volumetric work density can be achieved in association with a martensitic-like phase transformation. With a single step, control of the phase transformation by thermal activation or electric field has been reversibly achieved without the assistance of external recovery stress. Although aspects such as hysteresis, micro-cracking etc. have to be taken into consideration for real devices, the large shape memory effect in this oxide surpasses most alloys and therefore demonstrates itself as an extraordinary material for potential use in state-of-art nano-systems.

cond-mat.mtrl-sci↗

Doping influence of spin dynamics and magnetoelectric effect in hexagonal Y$_{0.7}$Lu$_{0.3}$MnO$_{3}$

We use inelastic neutron scattering to study spin waves and their correlation with the magnetoelectric effect in Y$_{0.7}$Lu$_{0.3}$MnO$_3$. In the undoped YMnO$_3$ and LuMnO$_3$, the Mn trimerization distortion has been suggested to play a key role in determining the magnetic structure and the magnetoelectric effect. In Y$_{0.7}$Lu$_{0.3}$MnO$_3$, we find a much smaller in-plane (hexagonal $ab$-plane) single ion anisotropy gap that coincides with a weaker in-plane dielectric anomaly at $T_N$. Since both the smaller in-plane anisotropy gap and the weaker in-plane dielectric anomaly are coupled to a weaker Mn trimerization distortion in Y$_{0.7}$Lu$_{0.3}$MnO$_3$ comparing to YMnO$_3$ and LuMnO$_3$, we conclude that the Mn trimerization is responsible for the magnetoelectric effect and multiferroic phenomenon in Y$_{1-y}$Lu$_{y}$MnO$_{3}$.

cond-mat.str-el↗

Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4/PMN-PT (011)

A central goal of electronics based on correlated materials or 'Mottronics' is the ability to switch between distinct collective states with a control voltage. Small changes in structure and charge density near a transition can tip the balance between competing phases, leading to dramatic changes in electronic and magnetic properties. In this work, we demonstrate that an electric field induced two-step ferroelastic switching pathway in (011) oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates can be used to tune the Verwey metal-insulator transition in epitaxial Fe3O4 films in a stable and reversible manner. We also observe robust non-volatile resistance switching in Fe3O4 up to room temperature, driven by ferroelastic strain. These results provides a framework for realizing non-volatile and reversible tuning of order parameters coupled to lattice-strain in epitaxial oxide heterostructures over a broad range of temperatures, with potential device applications.

cond-mat.mtrl-sci↗