Searcharxiv⌕ Search

arXiv subjects

Jinyu Liu

Publications and source records attributed to Jinyu Liu.

43 records · Page 3Linked to original sources

Similar ultrafast dynamics of several dissimilar Dirac and Weyl semimetals

Recent years have seen the rapid discovery of solids whose low-energy electrons have a massless, linear dispersion, such as Weyl, line-node, and Dirac semimetals. The remarkable optical properties predicted in these materials show their versatile potential for optoelectronic uses. However, little is known of their response in the picoseconds after absorbing a photon. Here we measure the ultrafast dynamics of four materials that share non-trivial band structure topology but that differ chemically, structurally, and in their low-energy band structures: ZrSiS, which hosts a Dirac line node and Dirac points; TaAs and NbP, which are Weyl semimetals; and Sr$_{1-y}$Mn$_{1-z}$Sb$_2$, in which Dirac fermions coexist with broken time-reversal symmetry. After photoexcitation by a short pulse, all four relax in two stages, first sub-picosecond, and then few-picosecond. Their rapid relaxation suggests that these and related materials may be suited for optical switches and fast infrared detectors. The complex change of refractive index shows that photoexcited carrier populations persist for a few picoseconds.

cond-mat.mtrl-sci↗

Nearly massless Dirac fermions and strong Zeeman splitting in the nodal-line semimetal ZrSiS probed by de Haas--van Alphen quantum oscillations

Topological semimetals represent a new class of quantum materials hosting Dirac/Weyl fermions. The essential properties of topological fermions can be revealed by quantum oscillations. Here we present the first systematic de Haas-van Alphen (dHvA) oscillation studies on the recently discovered topological Dirac nodal-line semimetal ZrSiS. From the angular dependence of dHvA oscillations, we have revealed the anisotropic Dirac bands in ZrSiS and found surprisingly strong Zeeman splitting at low magnetic fields. The Landé g-factor estimated from the separation of Zeeman splitting peaks is as large as 38. From the analyses of dHvA oscillations, we also revealed nearly zero effective mass and exceptionally high quantum mobility for Dirac fermions in ZrSiS. These results shed light on the nature of novel Dirac fermion physics of ZrSiS.

cond-mat.mtrl-sci↗

Generation of polarization squeezed light with an optical parametric amplifier at 795 nm

We report the experimental demonstration of polarization squeezed beam at 795 nm by combining a quadrature squeezed beam with a coherent beam. The quadrature squeezed beam is generated by a degenerate optical parametric amplifier based on a PPKTP crystal. Stokes parameter squeezing of -3.8 dB and anti squeezing of +5.0 dB is observed. This polarization squeezed beam resonant to rubidium D1 line has potential applications in quantum information networks and precise measurement beyond the shot noise limit.

quant-ph↗

Polarization squeezing at the audio frequency band for the Rubidium D1 line

A 2.8-dB polarization squeezing of the Stokes operator S2 for the rubidium D1 line (795 nm) is achieved, with the lowest squeezing band at an audio frequency of 2.6 kHz. Two methods are applied for improving the squeezing towards low frequencies: an orthogonal-polarized locking beam that precludes residual unwanted interference and quantum noise locking method that stabilizes the relative phase between the squeezed vacuum and the local oscillator. The squeezing level is limited by absorption-induced losses at short wavelengths, here is 397.5 nm. The generated polarization squeezed light can be used in a quantum enhanced magnetometer to increase the measurement sensitivity.

quant-ph↗

Nearly massless Dirac fermions hosted by Sb square net in BaMnSb2

Layered compounds AMnBi2 (A=Ca, Sr, Ba, or rare earth element) have been established as Dirac materials. Dirac electrons generated by the two-dimensional (2D) Bi square net in these materials are normally massive due to the presence of a spin-orbital coupling (SOC) induced gap at Dirac nodes. Here we report that the Sb square net in an isostructural compound BaMnSb2 can host nearly massless Dirac fermions. We observed strong Shubnikov-de Haas (SdH) oscillations in this material. From the analyses of the SdH oscillations, we find key signatures of Dirac fermions, including light effective mass (~0.052m0; m0, mass of free electron), high quantum mobility (1280 cm2V-1S-1) and a Pi Berry phase accumulated along cyclotron orbit. Compared with AMnBi2, BaMnSb2 also exhibits much more significant quasi two-dimensional (2D) electronic structure, with the out-of-plane transport showing nonmetallic conduction below 120K and the ratio of the out-of-plane and in-plane resistivity reaching ~670. Additionally, BaMnSb2 also exhibits an antiferromagnetic order with a weak ferromagnetic component. The combination of nearly massless Dirac fermions on quasi-2D planes with a magnetic order makes BaMnSb2 an intriguing platform for seeking novel exotic phenomena of massless Dirac electrons.

cond-mat.mtrl-sci↗

Topological nodal-line fermions in ZrSiSe and ZrSiTe

The discovery of topological semimetal phase in three-dimensional (3D) systems is a new breakthrough in topological material research. Dirac nodal-line semimetal is one of the three topological semimetal phases discovered so far; it is characterized by linear band crossing along a line/loop, contrasted with the linear band crossing at discrete momentum points in 3D Dirac and Weyl semimetals. The study of nodal-line semimetal is still at initial stage; only three material systems have been verified to host nodal line fermions until now, including PbTaSe2, PtSn 4and ZrSiS. In this letter, we report evidence of nodal line fermions in ZrSiSe and ZrSiTe probed in de Haas - van Alphen (dHvA) quantum oscillations. Although ZrSiSe and ZrSiTe share similar layered structure with ZrSiS, our measurements of angular dependences of dHvA oscillations indicate the Fermi surface (FS) enclosing Dirac nodal line is of 2D character in ZiSiTe, in contrast with 3D-like FS in ZrSiSe and ZrSiS. Another important property revealed in our experiment is that the nodal line fermion density in ZrSi(S/Se) (~ 10^20-10^21 cm^-3) is much higher than the Dirac/Weyl fermion density of any known topological materials. In addition, we have demonstrated ZrSiSe and ZrSiTe single crystals can be thinned down to 2D atomic thin layers through microexfoliation, which offers a promising platform to verify the predicted 2D topological insulator in the monolayer materials with ZrSiS-type structure

cond-mat.mtrl-sci↗

Novel Layered Iridate Ba7Ir3O13+δ Thin Films with Colossal Permittivity

Ba7Ir3O13+δ in thin film form is discovered. These films are characterized by colossal permittivity (CP) ~104 at room temperature, attributable to the colossal internal barrier layer capacitance effect at atomically thin domain boundaries. These findings suggest a new route to seeking novel CP materials through designing atomically thin domain boundaries.

cond-mat.mtrl-sci↗