SearcharxivSearch

arXiv subjects

Jinzhe Han

Publications and source records attributed to Jinzhe Han.

2 recordsLinked to original sources

Optical Controllable Spin-Polarization in Two Dimensional Altermagnets via Robust Spin-Momentum Locking Excitons

Spin-momentum locking (SML) excitons in two-dimensional semiconductors are appealing to programmable optical control of spin-polarized carriers in ultrafast spintronics. To address the current thirsty for long-lived excitons with zero-external-field stability and room-temperature spin-polarization, we hereby predict the existence of intrinsically SML excitons in altermagnetic V$_2 X_2$O ($X=$ S, Se) driven by giant non-relativistic spin-splittings ($>$ 1.2 eV). First-principles calculations reveal SML excitons with binding energies exceeding 1400 meV in monolayers and 430 meV in their van der Waals heterobilayers, along with stacking-dependent optical selection rules for tunable interlayer excitons. These remarkable physical properties, combined with their long radiative lifetimes, strongly suggest the feasibility of SML excitons with robust spin-polarization at room temperature. Our work provides a new paradigm for SML exciton physics via the novel altermagnetism, opening up new possibilities for all-optical manipulation in advanced opto-spintronics.

cond-mat.mes-hall

Electric-field Switching of Interlayer Magnetic Order in a van der Waals Heterobilayer via Spin-potential Coupling

Electric-field switching of magnetic order is of significant physical interest and holds great potential for spintronic applications. However, it has rarely been reported in two-dimensional (2D) van der Waals (vdW) magnets due to the inherently weak interaction between spin order and electric fields. Here we propose a general spin-potential mechanism that significantly enhances the magnetoelectric coupling. As a result, the relative stability of different interlayer magnetic orders in an asymmetric van der Waals heterobilayer can be reversed by external electric fields via spin-potential coupling. Based on this mechanism, we designed a series of 2D vdW all-magnetic heterobilayers, such as CrI3/MnSe2, in which a transition from interlayer ferromagnetic (iFM) to antiferromagnetic (iAFM) order is realized by a feasible electric field around 0.1 V/Å. Our findings not only reveal a novel magnetoelectric coupling mechanism, but also present a practical strategy for achieving pure electric-field-driven magnetic order switching

cond-mat.mtrl-sci