arXiv subjects

Jiong Lu

Publications and source records attributed to Jiong Lu.

25 records · Page 2Linked to original sources

arXiv2021

Sub-angstrom Non-invasive Imaging of Atomic Arrangement in 2D Hybrid Perovskites

Non-invasive imaging of the atomic arrangement in two-dimensional (2D) Ruddlesden-Popper hybrid Perovskites (RPPs), as well as understanding the related effects is challenging, due to the insulating nature and softness of the organic layers which also obscure the underlying inorganic lattice. Here, we demonstrate a sub-angstrom resolution imaging of both soft organic layers and inorganic framework in a prototypical 2D lead-halide RPP crystal via combined tip-functionalized Scanning Tunneling Microscopy (STM) and non-contact Atomic Force Microscope (ncAFM) corroborated by theoretical simulations. STM measurements unveil the atomic reconstruction of the inorganic lead-halide lattice and overall twin-domain composition of the RPP crystal, while ncAFM measurements with a CO-tip enable non-perturbative visualization of the cooperative reordering of surface organic cations driven by their hydrogen bonding interactions with the inorganic lattice. Moreover, such a joint technique also allows for the atomic-scale imaging of the electrostatic potential variation across the twin-domain walls, revealing alternating quasi-one-dimensional (1D) electron and hole-channels at neighboring twin-boundaries, which may influence in-plane exciton transport and dissociation.

cond-mat.mtrl-sci↗

arXiv2021

Electronic Self-passivation of Single Vacancy in Black Phosphorus via a Controlled Ionization

We report that mono-elemental black phosphorus presents a new electronic self-passivation scheme of single vacancy (SV). By means of low-temperature scanning tunneling microscopy and bond-resolved non-contact atomic force microscopy, we demonstrate that the local reconstruction and ionization of SV into negatively charged $\mathrm{SV}^-$ leads to the passivation of dangling bonds and thus the quenching of in-gap states, which can be achieved by mild thermal annealing or STM tip manipulation. SV exhibits a strong and symmetric Friedel oscillation (FO) pattern, while $\mathrm{SV}^-$ shows an asymmetric FO pattern with local perturbation amplitude reduced by one order of magnitude and a faster decay rate. The enhanced passivation by forming $\mathrm{SV}^-$ can be attributed to its weak dipole-like perturbation, consistent with density-functional theory and numerical calculations. Therefore, self-passivated $\mathrm{SV}^-$ is electronically benign and acts as a much weaker scattering center, which may hold the key to further enhance the charge mobility of BP and its analogs.

cond-mat.mtrl-sci↗

arXiv2018

Electrons imitating light: Frustrated supercritical collapse in charged arrays on graphene

The photon-like electronic dispersion of graphene bestows its charge carriers with unusual confinement properties that depend strongly on the geometry and strength of the surrounding potential. Here we report bottom-up synthesis of atomically-precise one-dimensional (1D) arrays of point charges aimed at exploring supercritical confinement of carriers in graphene for new geometries. The arrays were synthesized by arranging F4TCNQ molecules into a 1D lattice on back-gated graphene devices, allowing precise tuning of both the molecular charge state and the array periodicity. Dilute arrays of ionized F4TCNQ molecules are seen to behave like isolated subcritical charges but dense arrays show emergent supercriticality. In contrast to compact supercritical clusters, extended 1D charge arrays exhibit both supercritical and subcritical characteristics and belong to a new physical regime termed frustrated supercritical collapse. Here carriers in the far-field are attracted by a supercritical charge distribution, but have their fall to the center frustrated by subcritical potentials in the near-field, similar to the trapping of light by a dense cluster of stars in general relativity.

cond-mat.mes-hall↗

arXiv2017

Defects controlled hole doping and multi-valley transport in SnSe single crystals

SnSe is a promising thermoelectric material with record-breaking figure of merit, \textit{i.e., ZT}. As a semiconductor, optimal electrical dosage is the key challenge to maximize \textit{ZT} in SnSe. However, to date a comprehensive understanding of the electronic structure and most critically, the self-hole doping mechanism in SnSe is still absent. Here, we report the highly anisotropic electronic structure of SnSe investigated by both angle-resolved photoemission spectroscopy and quantum transport, in which a unique "\textit{pudding-mold}" shaped valence band with quasi-linear energy dispersion is revealed. We prove that the electrical doping in SnSe is extrinsically controlled by the formation of SnSe$_{2}$ micro-domains induced by local phase segregation. Using different growth methods and conditions, we have achieved wide tuning of hole doping in SnSe, ranging from intrinsic semiconducting behaviour to typical metal with carrier density of $1.23\times 10^{18}$ cm$^{-3}$ at room temperature. The resulting multi-valley transport in $p$-SnSe is characterized by non-saturating weak localization along the armchair axis, due to strong intervalley scattering enhanced by in-plane ferroelectric dipole field of the puckering lattice. Strikingly, quantum oscillations of magnetoresistance reveal three-dimensional electronic structure with unusual interlayer coupling strength in $p$-SnSe, which is correlated to the interweaving of SnSe individual layers by unique point dislocation defects. Our results suggest that defect engineering may provide versatile routes in improving the thermoelectric performance of the SnSe family.

cond-mat.mtrl-sci↗

arXiv2016

Nanoscale control of rewriteable doping patterns in pristine graphene/boron nitride heterostructures

Nanoscale control of charge doping in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and technologically promising nanoelectronics. Electrostatic gating and chemical doping are the two most common methods to achieve local control of such doping. However, these approaches suffer from complicated fabrication processes that introduce contamination, change material properties irreversibly, and lack flexible pattern control. Here we demonstrate a clean, simple, and reversible technique that permits writing, reading, and erasing of doping patterns for 2D materials at the nanometer scale. We accomplish this by employing a graphene/boron nitride (BN) heterostructure that is equipped with a bottom gate electrode. By using electron transport and scanning tunneling microscopy (STM), we demonstrate that spatial control of charge doping can be realized with the application of either light or STM tip voltage excitations in conjunction with a gate electric field. Our straightforward and novel technique provides a new path towards on-demand graphene pn junctions and ultra-thin memory devices.

cond-mat.mes-hall↗

arXiv2015

Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe2 Nanostructures

Despite the weak nature of interlayer forces in transition metal dichalcogenide (TMD) materials, their properties are highly dependent on the number of layers in the few-layer two-dimensional (2D) limit. Here, we present a combined scanning tunneling microscopy/spectroscopy and GW theoretical study of the electronic structure of high quality single- and few-layer MoSe2 grown on bilayer graphene. We find that the electronic (quasiparticle) bandgap, a fundamental parameter for transport and optical phenomena, decreases by nearly one electronvolt when going from one layer to three due to interlayer coupling and screening effects. Our results paint a clear picture of the evolution of the electronic wave function hybridization in the valleys of both the valence and conduction bands as the number of layers is changed. This demonstrates the importance of layer number and electron-electron interactions on van der Waals heterostructures, and helps to clarify how their electronic properties might be tuned in future 2D nanodevices.

cond-mat.mes-hall↗

arXiv2013

Seeding ice growth at ambient conditions using nano graphene oxide

Water wetting on a hydrophobic surface at ambient conditions is disallowed by the nonpolar nature of the surface and high vapor pressure of water. However, the presence of sub-millimeter sized hydrophilic patches allows the waxy wings of desert beetles to become wettable by morning mist. Here, we show that a sprinkle of graphene oxide nanoflakes (nanoGOs) is effective in condensing water nanodroplets and seeding ice epitaxy on graphite at ambient conditions. By controlling relative humidity and nanoGO density, we are able to study the formation of a complete ice wetting layer on a time scale of 20 hours. This presents an unprecedented opportunity to visualize ice nucleation and growth in real time using non-contact atomic force microscopy. The stages of crystallization, as proposed by Ostwald in 1897, is fully unfolded at a microscopic level for the first time. We obtain real-time imaging of sequential phase transition from amorphous ice to a transient cubic ice Ic stage and finally to the stable hexagonal ice Ih. Most interestingly, we discover that ice nucleation and growth can be influenced by modifying the functional groups of nanoGO, and by intermolecular hydrogen-bonding between nanoGOs. This affords a strategy to control heterogenous ice nucleation and snow crystal formation.

cond-mat.mes-hall↗