arXiv subjects

Jit Sarkar

Publications and source records attributed to Jit Sarkar.

8 recordsLinked to original sources

arXiv2021

Formation of Solitary Structures and Double Layer in Weakly Degenerate Electron-Ion Quantum Plasma in Ionosphere

In this paper, we consider ionospheric plasma consisting of weakly degenerate electrons and heavy ions. We embrace our hydrodynamic model by including the quantum diffraction term. By employing Sagdeev's pseudo-potential method, we obtain double layers and soliton structure. We have studied the various parametric dependence of solitary structures and double layers. The results thus obtained might be helpful in the studies of many high energy astrophysical phenomena.

physics.plasm-ph↗

arXiv2020

Development of planar microstrip resonators for electron spin resonance spectroscopy

This work focuses on the development of planar microwave resonators which are to be used in electron spin resonance spectroscopic studies. Two half wavelength microstrip resonators of different geometrical shapes, namely straight ribbon and omega, are fabricated on commercially available copper clad microwave laminates. Both resonators have a characteristic impedance of 50 Ω. We have performed electromagnetic field simulations for the two microstrip resonators and have extracted practical design parameters which were used for fabrication. The effect of the geometry of the resonators on the quasi-transverse electromagnetic (quasi-TEM) modes of the resonators is noted from simulation results. The fabrication is done using optical lithography technique in which laser printed photomasks are used. This rapid prototyping technique allows us to fabricate resonators in a few hours with accuracy up to 6 mils. The resonators are characterized using a Vector Network Analyzer. The fabricated resonators are used to standardize a home built low-temperature continuous wave electron spin resonance (CW-ESR) spectrometer which operates in S-band, by capturing the absorption spectrum of the free radical DPPH, at both room temperature and 77 K. The measured value of g-factor using our resonators is consistent with the values reported in literature. The designed half wavelength planar resonators will be eventually used in setting up a pulsed electron spin resonance spectrometer by suitably modifying the CW-ESR spectrometer.

physics.app-ph↗

arXiv2017

Linear magnetoresistance and surface to bulk coupling in topological insulator thin films

We explore the temperature dependent magnetoresistance of bulk insulating topological insulator thin films. Thin films of Bi2Se2Te and BiSbTeSe1.6 were grown using Pulsed Laser Deposition technique and subjected to transport measurements. Magnetotransport measurements indicate a non-saturating linear magnetoresistance (LMR) behavior at high magnetic field values. We present a careful analysis to explain the origin of LMR taking into consideration all the existing models of LMR. Here we consider that the bulk insulating states and the metallic surface states constitute two parallel conduction channels. Invoking this, we were able to explain linear magnetoresistance behavior as a competition between these parallel channels. We observe that the crossover field, where LMR sets in, decreases with increasing temperature. We propose that this cross over field can be used phenomenologically to estimate the strength of surface to bulk coupling.

cond-mat.str-el↗

arXiv2016

Bulk Saturable absorption in Topological Insulator thin Films

We present nonlinear optical absorption properties of pulsed laser deposited thin films of topological insulator (TI), Bi2Se3 on quartz substrate, using open aperture Z - scan technique. The saturable intensity of as-deposited thin films has been found remarkably improved by an order of magnitude compared to the values reported earlier in the literature. Past results from the literature are inconclusive in establishing whether the saturable absorption is coming from surface states or the bulk. Specifically designed experiments with magnetically doped TI samples allow us to attribute the saturable absorption characteristic of TI to the bulk states. Detailed experimental procedures and possible explanation of observed results have been discussed.

cond-mat.str-el↗

arXiv2016

Topological delocalization and tuning of surface channel separation in Bi2Se2Te Topological Insulator Thin films

The surface states of a 3D topological insulator (TI) exhibit topological protection against backscattering. However, the contribution of bulk electrons to the transport data is an impediment to the topological protection of surface. We report the tuning of the chemical potential in the bulk of Bi2Se2Te TI thin films, pinning it near the center of the bulk band gap, thereby suppressing the bulk carriers. The temperature dependent resistance of these films shows activated behavior down to 50K, followed by a metallic transition at lower temperatures, a hallmark of the robustness of TI surface states. Manifestation of topological protection and surface dominated transport is explained by 2D weak antilocalization phenomenon. We further explore the effect of surface to bulk coupling in TI in this work, which is captured by the number of effective conducting surface channels that participate in the transport. The presence of a single conducting channel indicates a strong surface to bulk coupling which is detrimental to purely topological transport. We demonstrate the decoupling of topological surface states on opposite surfaces of thin films, thereby suppressing the bulk transport. Our findings provide a deeper understanding of surface to bulk coupling along with topological transport behavior and their respective tunability.

cond-mat.str-el↗

arXiv2016

Parallel and series conduction model in Topological Insulators

In the past few years there has been a surge in the material science engineering in order to synthesize bulk insulating and surface metallic Topological Insulating (TI) materials. This quest is not only theoretically important but also promising from the novel application perspective. The dependence of temperature on resistance (R-T) of a particular sample reveals a plethora of information about the electronic properties especially in a unique sample like TI where there are two components comprising of an insulating bulk and metallic surface states. Depending on the amount of intrinsic doping during the sample formation, the bulk can either couple or remain decoupled with the surface. The former leads to a metallic R-T profile whereas the latter is captured by an insulating R-T behavior. These two behaviors can be represented by series and parallel resistor models respectively. In this work we study the R-T behavior in the framework of resistor models capturing the essential features of our sample.

cond-mat.str-el↗

arXiv2016

Tuning Chemical Potential in the Dirac Cone by Compositional Engineering

We report the successful formation of bulk insulating ternary topological insulators candidate Bi2Se2Te (BST) by pulsed laser deposition technique. The films were deposited with sequential ablation of separate Bi2Se3 (BS) and Bi2Te3 (BT) targets. From the X-ray diffraction analysis and temperature dependent resistivity we were able to conclude that the as grown thin films have ordered chalcogen layers and the chemical potential in these thin films lie in the bulk gap. To realize entirely topological transport for any device applications it is essential to tune the chemical potential in the bulk gap of the Dirac cone. Magnetotransport data exhibits pronounced two dimensional weak-antilocalization behavior (WAL) at low temperatures. BS and BT thin films do not exhibit topological transport as the chemical potential does not lie entirely in the bulk gap. It was found that BST thin films grown with this cost effective and simple yet elegant technique using double target can be used to deposit quaternary TI thin films, thereby tuning the chemical potential at will in the gap.

cond-mat.mes-hall↗

arXiv2015

Surface Optical and Bulk Acoustic Phonons in the Topological Insulator, Bi2Se2Te

We explore the phonon dynamics of thin films of the topological insulator material Bi2Se2Te using ultrafast pump-probe spectroscopy. The time resolved differential reflectivity of the films exhibit fast and slow oscillations. We have given a careful analysis of variation of phonon frequency as a function of film thickness attributing this to existence of standing acoustic modes. However, no variation in the frequency of the optical phonon modes was found with film thickness. This indicates that the optical phonons intrinsically belong to the surface of the topological insulators. The fact that the acoustic phonons can be tuned by changing the film thickness has tremendous potential for room temperature low power spintronic devices and in topological quantum computation.

cond-mat.mes-hall↗