arXiv subjects

Jiun-Yun Li

Publications and source records attributed to Jiun-Yun Li.

3 recordsLinked to original sources

arXiv2021

Effective out-of-plane g-factor in strained-Ge/SiGe quantum dots

Recently, lithographic quantum dots in strained-Ge/SiGe have become a promising candidate for quantum computation, with a remarkably quick progression from demonstration of a quantum dot to qubit logic demonstrations. Here we present a measurement of the out-of-plane $g$-factor for single-hole quantum dots in this material. As this is a single-hole measurement, this is the first experimental result that avoids the strong orbital effects present in the out-of-plane configuration. In addition to verifying the expected $g$-factor anisotropy between in-plane and out-of-plane magnetic ($B$)-fields, variations in the $g$-factor dependent on the occupation of the quantum dot are observed. These results are in good agreement with calculations of the $g$-factor using the heavy- and light-hole spaces of the Luttinger Hamiltonian, especially the first two holes, showing a strong spin-orbit coupling and suggesting dramatic $g$-factor tunability through both the $B$-field and the charge state.

cond-mat.mes-hall↗

arXiv2019

Single and Double Hole Quantum Dots in Strained Ge/SiGe Quantum Wells

Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit control, longer coherence times, and improved extensibility. Recent advances in heterostructure material growth have opened new possibilities for employing hole spins in semiconductors for qubit applications. Undoped, strained Ge/SiGe quantum wells are promising candidate hosts for hole spin-based qubits due to their low disorder, large intrinsic spin-orbit coupling strength, and absence of valley states. Here, we use a simple one-layer gated device structure to demonstrate both a single quantum dot as well as coupling between two adjacent quantum dots. The hole effective mass in these undoped structures, $m$* ~ 0.08 $m$$_0$, is significantly lower than for electrons in Si/SiGe, pointing to the possibility of enhanced tunnel couplings in quantum dots and favorable qubit-qubit interactions in an industry-compatible semiconductor platform.

cond-mat.mes-hall↗

arXiv2018

Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime

Gate-controllable spin-orbit coupling is often one requisite for spintronic devices. For practical spin field-effect transistors, another essential requirement is ballistic spin transport, where the spin precession length is shorter than the mean free path such that the gate-controlled spin precession is not randomized by disorder. In this letter, we report the observation of a gate-induced crossover from weak localization to weak anti-localization in the magneto-resistance of a high-mobility two-dimensional hole gas in a strained germanium quantum well. From the magneto-resistance, we extract the phase-coherence time, spin-orbit precession time, spin-orbit energy splitting, and cubic Rashba coefficient over a wide density range. The mobility and the mean free path increase with increasing hole density, while the spin precession length decreases due to increasingly stronger spin-orbit coupling. As the density becomes larger than $\sim6\times 10^{11}$cm$^{-2}$, the spin precession length becomes shorter than the mean free path, and the system enters the ballistic spin transport regime. We also report here the numerical methods and code developed for calculating the magneto-resistance in the ballistic regime, where the commonly used HLN and ILP models for analyzing weak localization and anti-localization are not valid. These results pave the way toward silicon-compatible spintronic devices.

cond-mat.mes-hall↗