arXiv subjects

Jiuning Hu

Publications and source records attributed to Jiuning Hu.

17 recordsLinked to original sources

arXiv2022

Large-scale five- and seven-junction epitaxial graphene devices

The utilization of multiple current terminals on millimeter-scale graphene p-n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the i=2 plateau. These fractions take the form a/b R_H and can be determined both analytically and by simulations. These experiments validate the use of either the LTspice circuit simulator or the analytical framework recently presented in similar work. Furthermore, the production of several devices with large-scale junctions substantiates the approach of using simple ultraviolet lithography to obtain junctions of sufficient sharpness.

cond-mat.mes-hall↗

arXiv2022

Nonconventional Quantized Hall Resistances Obtained with $\nu = 2$ Equilibration in Epitaxial Graphene $p-n$ Junctions

We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantized Hall resistance at $\nu=2$ ($R_H\approx 12906 {\Omega}$) that take the form: $\frac{a}{b}R_H$. Here, $a$ and $b$ have been observed to take on values such 1, 2, 3, and 5 to form various coefficients of $R_H$. Additionally, we provide a framework for exploring future device configurations using the LTspice circuit simulator as a guide to understand the abundance of available fractions one may be able to measure. These results support the potential for drastically simplifying device processing time and may be used for many other two-dimensional materials.

cond-mat.mes-hall↗

arXiv2022

Designs for programmable quantum resistance standards based on epitaxial graphene p-n junctions

We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standards. Furthermore, we offer designs of programmable electrical resistance standards over six orders of magnitude by using external gating.

cond-mat.mes-hall↗

arXiv2021

Chiral transport of hot carriers in graphene in the quantum Hall regime

Photocurrent (PC) measurements can reveal the relaxation dynamics of photo-excited hot carriers beyond the linear response of conventional transport experiments, a regime important for carrier multiplication. In graphene subject to a magnetic field, PC measurements are able to probe the existence of Landau levels with different edge chiralities which is exclusive to relativistic electron systems. Here, we report the accurate measurement of PC in graphene in the quantum Hall regime. Prominent PC oscillations as a function of gate voltage on samples' edges are observed. These oscillation amplitudes form an envelope which depends on the strength of the magnetic field, as does the PCs' power dependence and their saturation behavior. We explain these experimental observations through a model using optical Bloch equations, incorporating relaxations through acoustic-, optical- phonons and Coulomb interactions. The simulated PC agrees with our experimental results, leading to a unified understanding of the chiral PC in graphene at various magnetic field strengths, and providing hints for the occurrence of a sizable carrier multiplication.

cond-mat.mes-hall↗

arXiv2019

Observation of chiral photocurrent transport in the quantum Hall regime in graphene

Optical excitation provides a powerful tool to investigate non-equilibrium physics in quantum Hall systems. Moreover, the length scale associated with photo-excited charge carries lies between that of local probes and global transport measurements. Here, we investigate non-equilibrium physics of optically-excited charge carriers in graphene through photocurrent measurements in the integer quantum Hall regime. We observe that the photocurrent oscillates as a function of Fermi level, revealing the Landau-level quantization, and that the photocurrent oscillations are different for Fermi levels near and distant from the Dirac point. Our observation qualitatively agrees with a model that assumes the photocurrent is dominated by chiral edge transport of non-equilibrium carriers. Our experimental results are consistent with electron and hole chiralities being the same when the Fermi level is distant from the Dirac point, and opposite when near the Dirac point.

cond-mat.mes-hall↗

arXiv2018

Confocal laser scanning microscopy: A tool for rapid optical characterization of 2D materials

Confocal laser scanning microscopy (CLSM) is a non-destructive, highly-efficient optical characterization method for large-area analysis of graphene on different substrates, which can be applied in ambient air, does not require additional sample preparation, and is insusceptible to surface charging and surface contamination. CLSM leverages optical properties of graphene and provides greatly enhanced optical contrast and mapping of thickness down to a single layer. We demonstrate the effectiveness of CLSM by measuring mechanically exfoliated and chemical vapor deposition graphene on Si/SiO2, and epitaxial graphene on SiC. In the case of graphene on Si/SiO2, both CLSM intensity and height mapping is powerful for analysis of 1-5 layers of graphene. For epitaxial graphene on SiC substrates, the CLSM intensity allows us to distinguish features such as dense, parallel 150 nm wide ribbons of graphene (associated with the early stages of the growth process) and large regions covered by the interfacial layer and 1-3 layers of graphene. In both cases, CLSM data shows excellent correlation with conventional optical microscopy, atomic force microscopy, Kelvin probe force microscopy, conductive atomic force microscopy, scanning electron microscopy and Raman mapping, with a greatly reduced acquisition time. We demonstrate that CLSM is an indispensable tool for rapid analysis of mass-produced graphene and is equally relevant to other 2D materials.

physics.app-ph↗

arXiv2017

Rapid characterization of wafer-scale 2D material: Epitaxial graphene and graphene nanoribbons on SiC

We demonstrate that the confocal laser scanning microscopy (CLSM) provides a non-destructive, highly-efficient characterization method for large-area epitaxial graphene and graphene nanostructures on SiC substrates, which can be applied in ambient air without sample preparation and is insusceptible to surface charging or surface contamination. Based on the variation of reflected intensity from regions covered by interfacial layer, single layer, bilayer, or few layer graphene, and through the correlation to the results from Raman spectroscopy and SPM, CLSM images with a high resolution (around 150 nm) reveal that the intensity contrast has distinct feature for undergrown graphene (mixing of dense, parallel graphene nanoribbons and interfacial layer), continuous graphene, and overgrown graphene. Moreover, CLSM has a real acquisition time hundreds of times faster per unit area than the supplementary characterization methods. We believe that the confocal laser scanning microscope will be an indispensable tool for mass-produced epitaxial graphene or applicable 2D materials.

physics.app-ph↗

arXiv2017

Coulomb drag and counterflow Seebeck coefficient in bilayer-graphene double layers

We have fabricated bilayer-graphene double layers separated by a thin ($\sim$20 nm) boron nitride layer and performed Coulomb drag and counterflow thermoelectric transport measurements. The measured Coulomb drag resistivity is nearly three orders smaller in magnitude than the intralayer resistivities. The counterflow Seebeck coefficient is found to be well approximated by the difference between Seebeck coefficients of individual layers and exhibit a peak in the regime where two layers have opposite sign of charge carriers. The measured maximum counterflow power factor is $\sim$ 700 $\mu$W/K$^2$cm at room temperature, promising high power output per mass for lightweight thermoelectric applications. Our devices open a possibility for exploring the novel regime of thermoelectrics with tunable interactions between n-type and p-type channels based on graphene and other two-dimensional materials and their heterostructures.

cond-mat.mes-hall↗

arXiv2015

High-performance Thermal Interface Material Based on Few-layer Graphene Composite

We developed high-performance thermal interface materials (TIMs) based on few-layer graphene (FLG) composite, where FLG was prepared by the interlayer catalytic exfoliation (ICE) method. We experimentally demonstrated feasibility of FLG composites as TIMs by investigating their thermal and mechanical properties, and reliability. We measured the thermal interface resistance ($R_{int}$) between FLG composite TIMs (FLGTs) and copper and to be 3.2$\pm$1.7 and 4.3$\pm$1.4 $mm^2$K/W for 5 vol.% and 10 vol.% FLGTs at 330 K, respectively, comparable to or even lower than that of many commercial TIMs. In addition, the thermal conductivity ($\kappa_{TIM}$) of FLGTs is increased by an enhancement factor ($\beta$) of ~17 as the FLG concentration increases from 0 to 10 vol.%. We also characterized Vickers hardness and glass transition temperature ($T_g$) of our FLGTs. We find that our FLGTs are thermally and mechanically reliable within practical operating temperature and pressure ranges.

cond-mat.mtrl-sci↗

arXiv2014

Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator

A three-dimensional (3D) topological insulator (TI) is a quantum state of matter with a gapped insulating bulk yet a conducting surface hosting topologically-protected gapless surface states. One of the most distinct electronic transport signatures predicted for such topological surface states (TSS) is a well-defined half-integer quantum Hall effect (QHE) in a magnetic field, where the surface Hall conductivities become quantized in units of (1/2)e2/h (e being the electron charge, h the Planck constant) concomitant with vanishing resistance. Here, we observe well-developed QHE arising from TSS in an intrinsic TI of BiSbTeSe2. Our samples exhibit surface dominated conduction even close to room temperature, while the bulk conduction is negligible. At low temperatures and high magnetic fields perpendicular to the top and bottom surfaces, we observe well-developed integer quantized Hall plateaus, where the two parallel surfaces each contributing a half integer e2/h quantized Hall (QH) conductance, accompanied by vanishing longitudinal resistance. When the bottom surface is gated to match the top surface in carrier density, only odd integer QH plateaus are observed, representing a half-integer QHE of two degenerate Dirac gases. This system provides an excellent platform to pursue a plethora of exotic physics and novel device applications predicted for TIs, ranging from magnetic monopoles and Majorana particles to dissipationless electronics and fault-tolerant quantum computers.

cond-mat.mes-hall↗

arXiv2014

Electrical and thermal conductivities of reduced graphene oxide/polystyrene composites

The author reports an experimental study of electrical and thermal transport in reduced graphene oxide (RGO)/polystyrene (PS) composites. The electrical conductivity ($\sigma$) of RGO/PS composites with different RGO concentrations at room temperature shows a percolation behavior with the percolation threshold of ~ 0.25 vol.%. Their temperature-dependent electrical conductivity follows Efros-Shklovskii (ES) variable range hopping (VRH) conduction in the temperature range of 30 to 300 K. The thermal conductivity ($\kappa$) of composites is enhanced by ~ 90 % as the concentration is increased from 0 to 10 vol.%. The thermal conductivity of composites approximately linearly increases with increasing temperature from 150 to 300 K. Composites with a higher concentration show a stronger temperature dependence in the thermal conductivity.

cond-mat.mtrl-sci↗

arXiv2012

Tunable Thermal Transport and Thermal Rectification in Strained Graphene Nanoribbons

Using molecular dynamics(MD) simulations, we study thermal transport in graphene nanoribbons (GNR) subjected to uniform uniaxial and nonuniform strain fields. We predict significant thermal rectification (over 70%) in a rectangular armchair GNR by applying a transverse force asymmetrically. The heat flux is larger from the less stressed region to the more stressed region. Furthermore, we develop a theoretical framework based on the non-equilibrium thermodynamics to discuss when thermal rectification under a stress gradient can occur. We conclude with a discussion of details relevant to experiment.

cond-mat.mtrl-sci↗

arXiv2012

Observation of Quantized Hall Effect and Shubnikov-de Hass Oscillations in Highly Doped Bi2Se3: Evidence for Layered Transport of Bulk Carriers

Bi2Se3 is an important semiconductor thermoelectric material and a prototype topological insulator. Here we report observation of Shubnikov-de Hass (SdH) oscillations accompanied by quantized Hall resistances (Rxy) in highly-doped n-type Bi2Se3 with bulk carrier concentrations of few 10^19 cm^-3. Measurements under tilted magnetic fields show that the magnetotransport is 2D-like, where only the c-axis component of the magnetic field controls the Landau level formation. The quantized step size in 1/Rxy is found to scale with the sample thickness, and average ~e2/h per quintuple layer (QL). We show that the observed magnetotransport features do not come from the sample surface, but arise from the bulk of the sample acting as many parallel 2D electron systems to give a multilayered quantum Hall effect. Besides revealing a new electronic property of Bi2Se3, our finding also has important implications for electronic transport studies of topological insulator materials.

cond-mat.str-el↗

arXiv2012

Existence of negative differential thermal conductance in one-dimensional diffusive thermal transport

We show that in a finite one-dimensional (1D) system with diffusive thermal transport described by the Fourier's law, negative differential thermal conductance (NDTC) cannot occur when the temperature at one end is fixed. We demonstrate that NDTC in this case requires the presence of junction(s) with temperature dependent thermal contact resistance (TCR). We derive a necessary and sufficient condition for the existence of NDTC in terms of the properties of the TCR for systems with a single junction. We show that under certain circumstances we even could have infinite (negative or positive) differential thermal conductance in the presence of the TCR. Our predictions provide theoretical basis for constructing NDTC-based devices, such as thermal amplifiers, oscillators and logic devices.

cond-mat.mtrl-sci↗

arXiv2011

Nonlinear thermal transport and negative differential thermal conductance in graphene nanoribbons

We employ classical molecular dynamics to study the nonlinear thermal transport in graphene nanoribbons (GNRs). For GNRs under large temperature biases beyond linear response regime, we have observed the onset of negative differential thermal conductance (NDTC). NDTC is tunable by varying the manner of applying the temperature biases. NDTC is reduced and eventually disappears when the length of the GNR increases. We have also observed NDTC in triangular GNRs, where NDTC exists only when the heat current is from the narrower to the wider end. These effects may be useful in nanoscale thermal managements and thermal signal processing utilizing GNRs.

cond-mat.mes-hall↗

arXiv2010

Thermal Conductivity and Thermal Rectification in Graphene Nanoribbons: a Molecular Dynamics Study

We have used molecular dynamics to calculate the thermal conductivity of symmetric and asymmetric graphene nanoribbons (GNRs) of several nanometers in size (up to ~4 nm wide and ~10 nm long). For symmetric nanoribbons, the calculated thermal conductivity (e.g. ~2000 W/m-K @400K for a 1.5 nm {\times} 5.7 nm zigzag GNR) is on the similar order of magnitude of the experimentally measured value for graphene. We have investigated the effects of edge chirality and found that nanoribbons with zigzag edges have appreciably larger thermal conductivity than nanoribbons with armchair edges. For asymmetric nanoribbons, we have found significant thermal rectification. Among various triangularly-shaped GNRs we investigated, the GNR with armchair bottom edge and a vertex angle of 30° gives the maximal thermal rectification. We also studied the effect of defects and found that vacancies and edge roughness in the nanoribbons can significantly decrease the thermal conductivity. However, substantial thermal rectification is observed even in the presence of edge roughness.

cond-mat.mes-hall↗

arXiv2010

Tuning the thermal conductivity of graphene nanoribbons by edge passivation and isotope engineering: a molecular dynamics study

Using classical molecular dynamics simulation, we have studied the effect of edge-passivation by hydrogen (H-passivation) and isotope mixture (with random or supperlattice distributions) on the thermal conductivity of rectangular graphene nanoribbons (GNRs) (of several nanometers in size). We found that the thermal conductivity is considerably reduced by the edge H-passivation. We also find that the isotope mixing can reduce the thermal conductivities, with the supperlattice distribution giving rise to more reduction than the random distribution. These results can be useful in nanoscale engineering of thermal transport and heat management using GNRs.

cond-mat.mes-hall↗