arXiv subjects

Jiuren Zhou

Publications and source records attributed to Jiuren Zhou.

4 recordsLinked to original sources

arXiv2026

DSPE: An Energy-Efficient Edge Processor for DeepSeek Inference with MerkleTree-based Incremental Pruning, Multi-Stage Boothing Lookup and Dynamic Adaptive Posit Processing

In recent years, DeepSeek has achieved strong inference performance but remains hard to deploy on energy-constrained edge devices. This paper presents the DeepSeek Processing Element (DSPE), an edge-oriented architecture that alleviates the model's heavy computational and energy demands. DSPE introduces three techniques: the MerkleTree-based Incremental Pruning Scheme (MIPS) for secure redundant-vector reduction, the Multi-Stage Boothing Lookup Method (MBLM) for bit-flip-aware approximate multiplication, and the Dynamic Adaptive Posit Processing Mechanism (DAPPM), which introduces a new DA-Posit format and its corresponding hardware multiplication architecture. Implemented in TSMC 28nm CMOS, DSPE achieves 109.4 TFLOPS/W energy efficiency compared with state-of-the-art designs and offers a scalable foundation for edge deployment.

cs.AR↗

arXiv2025

Wurtzite AlScN/AlN Superlattice Ferroelectrics Enable Endurance Beyond 1010 Cycles

Wurtzite ferroelectrics are rapidly emerging as a promising material class for next-generation non-volatile memory technologies, owing to their large remanent polarization, intrinsically ordered three-dimensional crystal structure, and full compatibility with CMOS processes and back-end-of-line (BEOL) integration. However, their practical implementation remains critically constrained by a severe endurance bottleneck: under conditions where the remanent polarization (2Pr) reaches or exceeds 200 uC/cm^2, devices typically undergo catastrophic failure before reaching 10^8 cycles. Here, we report a vacancy-confining superlattice strategy that addresses this limitation, achieving reliable ferroelectric switching beyond 10^10 cycles while preserving saturated polarization (2Pr >= 200 uC/cm^2). This is achieved by embedding periodic ultrathin AlN layers within AlScN films, forming wurtzite AlScN/AlN superlattices, in conjunction with a dynamic recovery protocol that actively stabilizes the defect landscape throughout repeated cycling. Atomic-resolution imaging and EELS spectrum imaging technique, supported by first-principles calculations, reveal a self-regulated defect topology in which nitrogen vacancies are spatially confined by heterostructure energy barriers and dynamically re-trapped into energetically favorable lattice sites. This dual spatial-energetic confinement mechanism effectively inhibits both long-range percolative migration and local defect clustering, enabling such an ultrahigh endurance exceeding 10^10 cycles and limiting polarization degradation to below 3% after 10^9 cycles. These findings establish nitrogen vacancy topology stabilization as a foundational design principle for reliable operation of wurtzite ferroelectrics, providing a scalable and CMOS-compatible platform for future high-endurance ferroelectric memory technologies.

cond-mat.mtrl-sci↗

arXiv2025

Cryogenic Ferroelectric Behavior of Wurtzite Ferroelectrics

This study presents the first experimental exploration into cryogenic ferroelectric behavior in wurtzite ferroelectrics. A breakdown field (EBD) to coercive field (EC) ratio of 1.8 is achieved even at 4 K, marking the lowest ferroelectric switching temperature reported for wurtzite ferroelectrics. Additionally, a significant evolution in fatigue behavior is captured, transitioning from hard breakdown to ferroelectricity loss at cryogenic temperatures. These findings unlock the feasibility for wurtzite ferroelectrics to advance wide temperature non-volatile memory.

cond-mat.mtrl-sci↗

arXiv2024

Microscopic Insights into Fatigue Mechanism in Wurtzite Ferroelectric Al$_{0.65}$Sc$_{0.35}$N: Oxygen Infiltration Enabled Grain Amorphization Spanning Boundary to Bulk

For the first time, the fatigue behavior involving external oxygen in highly Sc-doped AlN ferroelectric film was observed using transmission electron microscope techniques. Despite increasing the Sc composition in AlScN film contributes to reducing the device operation voltage, the inherent affinity of Sc for oxygen introduces instability in device performance. In this study, oxygen incorporation at top electrode edges and grain boundaries accompanied with an increase in current leakage and the disappearance of ferroelectric properties, was observed in nanoscale after long-term field cycling. This observation indicates the emergence of non-ferroelectric and even amorphous states. This presented work revealed solid experimental evidence of an oxygen-involved fatigue mechanism, providing valuable insights into the physical nature of the ferroelectric properties of AlScN films.

cond-mat.mtrl-sci↗