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Jiuxiang Zhang

Publications and source records attributed to Jiuxiang Zhang.

5 recordsLinked to original sources

Suppression of p-Wave Altermagnetism by Localized 4f Electrons in CeNiAsO

Altermagnetism, characterized by momentum-dependent spin splitting and zero net magnetization, has so far been explored mainly in weakly or moderately correlated d-electron systems. How symmetry-allowed altermagnetic band splitting manifests in heavy-fermion materials, where magnetic exchange competes with Kondo correlations, remains unclear. Here we use high-resolution angle-resolved photoemission spectroscopy (ARPES) to investigate CeNiAsO, a Kondo-lattice system that was predicted to be a candidate for p-wave altermagnetism. Fermi surface mapping and polarization-dependent ARPES show that the experimentally observed itinerant bands are mainly derived from Ni 3d orbitals, while resonant photoemission reveals that the Ce 4f states remain predominantly localized with residual c-f hybridization. Ultra-low-temperature measurements reveal no resolvable near-Fermi-level p-wave-like exchange splitting on the Ni 3d-derived conduction bands across the successive antiferromagnetic transitions. These experimental observations cannot be captured by an itinerant-4f band-structure description, which predicts a sizable p-wave splitting in the itinerant bands. When the localized Ce 4f character is incorporated, our band structure calculations indicate that the itinerant Ce 4f band weight is shifted away from the Fermi level and the p-wave-like splitting on the Ni 3d-derived bands is reduced to the few-meV scale. These results establish CeNiAsO as a strongly correlated f-electron setting in which the magnetic symmetry allows p-wave-like band splitting, but localized 4f electrons strongly suppress its observable itinerant single-particle signature.

cond-mat.str-el

Coexistence of High Temperature Superconductivity and Antiferromagnetic Order in a Cuprate with Multiple Hole Fermi Pockets

The intricate relationship between high temperature superconductivity and antiferromagnetic order in cuprates, and the fundamental origin of electron pairing remain open questions. By utilizing high-resolution laser-based spatially-resolved angle-resolved photoemission spectroscopy, we investigate the seven-layer $Bi_{2}Sr_{2}Ca_{6}Cu_{7}O_{18+δ}$ (Bi2267) and identify a cuprate system that consists of multiple hole Fermi pockets. The observed Fermi pockets exhibit pronounced momentum-, temperature- and Fermi surface-dependent energy gaps. Crucially, high temperature superconductivity with a critical temperature ($T_{\mathrm{c}}$) of $\sim$75 K emerges in a system with multiple Fermi pockets and the presence of strong antiferromagnetic order and correlations. In particular, substantial electron pairing is observed along the Fermi pocket with an energy gap up to $\sim$42 meV in lightly-doped CuO$_{2}$ planes ($p\sim$0.05). These findings challenge the conventional understanding of the roles of the nodal and antinodal electronic states in driving high-temperature superconductivity. They show that superconductivity and antiferromagnetism can coexist in a cuprate with multiple Fermi pockets, offering further insights into the pairing mechanism in cuprate superconductors.

cond-mat.supr-con

Persistent Fermi Pockets and Robust Electron Pairing in Lightly Doped CuO$_2$ Planes of Cuprate Superconductors

High temperature superconductivity in cuprate superconductors is generally considered to be generated from doping the Mott insulators. The fundamental nature of the doped parent compounds as well as the microscopic origin of electron pairing remain critical issues in understanding the emergence of superconductivity. Here, using high-resolution spatially-resolved laser angle-resolved photoemission spectroscopy, we investigate the intrinsic electronic structures of the CuO$_2$ planes in multilayer cuprates Bi$_2$Sr$_2$Ca$_{n-1}$Cu$_n$O$_{2n+4+δ}$ (n=5$\sim$8). The inner CuO$_2$ planes are well shielded from the disorders and provide a rare and ideal platform to probe the intrinsic electronic phase diagram. We observe well-defined Fermi pockets with hole doping levels as low as 0.007, demonstrating an abrupt transition from the parent Mott insulator to a metallic state upon the introduction of an infinitesimal amount of doping. The innermost CuO$_2$ planes (IP$_0$) display gapless Fermi pockets, while the second innermost planes (IP$_1$) exhibit anisotropic superconducting gaps up to $\sim$33$\,$meV, indicative of robust electron pairing coexisting with strong antiferromagnetic order. Our findings provide a revised framework for understanding the doping-driven transitions and pairing mechanisms in cuprate superconductors.

cond-mat.supr-con

Doping Evolution of Nodal Electron Dynamics in Trilayer Cuprate Superconductor Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10+δ}$ Revealed by Laser-Based Angle-Resolved Photoemission Spectroscopy

The doping evolution of the nodal electron dynamics in the trilayer cuprate superconductor Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10+δ}$ (Bi2223) is investigated using high-resolution laser-based angle-resolved photoemission spectroscopy (ARPES). Bi2223 single crystals with different doping levels are prepared by controlled annealing which cover the underdoped, optimally-doped and overdoped regions. The electronic phase diagram of Bi2223 is established which describes the T$_\mathrm{c}$ dependence on the sample doping level. The doping dependence of the nodal Fermi momentum for the outer (OP) and inner (IP) CuO$_2$ planes is determined. Charge distribution imbalance between the OP and IP CuO$_2$ planes is quantified, showing enhanced disparity with increasing doping. Nodal band dispersions demonstrate a prominent kink at $\sim$94$\,$meV in the IP band, attributed to the unique Cu coordination in the IP plane, while a weaker $\sim$60$\,$meV kink is observed in the OP band. The nodal Fermi velocity of both OP and IP bands is nearly constant at $\sim$1.62$\,$eVÅ independent of doping. These results provide important information to understand the origin of high T$_\mathrm{c}$ and superconductivity mechanism in high temperature cuprate superconductors.

cond-mat.supr-con

Direct observation of electronic band gap and hot carrier dynamics in GeAs semiconductor

Germanium arsenide (GeAs) is a layered semiconductor with remarkably anisotropic physical, thermoelectric and optical properties, and a promising candidate for multifunctional devices based on in-plane polarization dependent response. Understanding the underlying mechanism of such devices requires the knowledge of GeAs electronic band structure and of the hot carrier dynamics in its conduction band, whose details are still unclear. In this work, we investigated the properties of occupied and photoexcited states of GeAs in energy-momentum space, by combining scanning tunneling spectroscopy (STS), angle-resolved photoemission spectroscopy (ARPES) and time-resolved ARPES. We found that, GeAs is an indirect gap semiconductor having an electronic gap of 0.8 eV, for which the conduction band minimum (CBM) is located at the Gamma point while the valence band maximum (VBM) is out of Gamma. A Stark broadening of the valence band is observed immediately after photoexcitation, which can be attributed to the effects of the electrical field at the surface induced by inhomogeneous screening. Moreover, the hot electrons relaxation time of 1.56 ps down to the CBM which is dominated from both inter-valley and intra-valley coupling. Besides their relevance for our understanding of GeAs, these findings present general interest for the design on high performance thermoelectric and optoelectronic devices based on 2D semiconductors.

cond-mat.mtrl-sci