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Jizhong Li

Publications and source records attributed to Jizhong Li.

3 recordsLinked to original sources

Explicit Language Memory for Long-Horizon Planning in Vision-Language-Action Models

Vision-language-action (VLA) models provide a unified paradigm for connecting visual perception, language understanding, and robotic control. However, existing VLA models still face major challenges in long-horizon tasks: sparse expert demonstrations constrain cross-task compositional generalization; the non-Markovian nature of long-horizon tasks makes it difficult for policies conditioned only on current observations to maintain temporal consistency; limited closed-loop error correction allows execution errors to accumulate; and end-to-end action fine-tuning may weaken the high-level semantic representations of vision-language model (VLM) backbones. To address these issues, we propose a hierarchical long-horizon VLA architecture with an explicit language-memory module. The central idea is to convert discrete temporal observations into a coherent textual memory sequence with temporal logic. The system is decoupled into a high-level VLM and a low-level VLA: the high-level VLM performs semantic reasoning through a visual question answering training paradigm, while the low-level VLA executes precise continuous control conditioned on subtask instructions and visual observations. The high-level VLM recursively updates both language memory and subtask instructions using the previous memory as a contextual anchor, enabling persistent temporal tracking and dynamic correction during long-horizon execution. We evaluate the proposed method in multiple simulation environments and conduct sim-to-real experiments on a real robotic platform. The results demonstrate that explicit language memory improves the success rate and robustness of VLA models on complex long-horizon tasks while providing an interpretable semantic account of the decision process.

cs.RO

LowAux-RDNet: Low-Pass Residual Supervision with Scene-Balanced Real-World Training for Single-Image Reflection Removal

Single-image reflection removal aims to recover a clean transmission layer from one image captured through glass. We study an explicit decomposition pipeline built on RDNet and introduce LowAux, a training-only low-pass reflection auxiliary objective. The original residual target remains the main reflection supervision, while symmetrically filtered prediction and target provide a stable low-frequency constraint. We further incorporate scene-balanced real pairs from RRW to broaden real-scene coverage and improve cross-dataset generalization. To avoid evaluation discrepancies caused by model-specific resizing, padding, output quantization, and metric code, we build a unified public benchmark over CEILNet, Real20, Postcard, Objects, and Wild. Under the same evaluator, the proposed system obtains a five-dataset macro average of 27.546 dB PSNR, 0.9220 SSIM, 0.9751 NCC, and 0.004760 LMSE, achieving the highest macro-average PSNR, SSIM, and NCC and the lowest LMSE among the compared public checkpoints and internal variants. Per-dataset and qualitative analyses show that the main benefit is a more balanced performance across diverse reflection distributions, while clear semantic reflections in Postcard remain challenging.

cs.CV

Monolithic Integration of AlGaAs Distributed Bragg Reflectors on Virtual Ge Substrates via Aspect Ratio Trapping

High quality AlxGa1-xAs distributed Bragg reflectors (DBRs) were successfully monolithically grown on on-axis Si (100) substrates via a Ge layer formed by aspect ratio trapping (ART) technique. The GaAs/ART-Ge/Si-based DBRs have reflectivity spectra comparable to those grown on conventional bulk off-cut GaAs substrates and have smooth morphology, and good periodicity and uniformity. Anitphase domain formation is significantly reduced in GaAs on ART-Ge/Si substrates, and etch pit density of the GaAs base layer on the ART-Ge substrates ranges from 10^5 to 6 x 10^6 cm^(-2). These results paved the way for future VCSEL growth and fabrication on these ART-Ge substrates and also confirm that virtual Ge substrates via ART technique are effective Si platforms for optoelectronic integrated circuits.

cond-mat.mtrl-sci