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João Guimarães da Costa

Publications and source records attributed to João Guimarães da Costa.

6 recordsLinked to original sources

Beam test result and digitization of TaichuPix-3: A Monolithic Active Pixel Sensors for CEPC vertex detector

The Circular Electron-Positron Collider (CEPC), as the next-generation electron-positron collider, is tasked with advancing not only Higgs physics but also the discovery of new physics. Achieving these goals requires high-precision measurements of particles. Taichu seires, Monolithic Active Pixel Sensor (MAPS), a key component of the vertex detector for CEPC was designed to meet the CEPC's requirements. For the geometry of vertex detector is long barrel with no endcap, and current silicon lacks a complete digitization model, precise estimation of cluster size particularly causing by particle with large incident angle is needed. Testbeam results were conducted at the Beijing Synchrotron Radiation Facility (BSRF) to evaluate cluster size dependence on different incident angles and threshold settings. Experimental results confirmed that cluster size increases with incident angle. Simulations using the Allpix$^2$ framework replicated experimental trends at small angles but exhibited discrepancies at large angles, suggesting limitations in linear electric field assumptions and sensor thickness approximations. The results from both testbeam and simulations have provided insights into the performance of the TaichuPix chip at large incident angles, offering a crucial foundation for the establishment of a digital model and addressing the estimation of cluster size in the forward region of the long barrel. Furthermore, it offers valuable references for future iterations of TaichuPix, the development of digital models, and the simulation and estimation of the vertex detector's performance.

physics.ins-det↗

Beam test of a baseline vertex detector prototype for CEPC

The Circular Electron Positron Collider (CEPC) has been proposed to enable more thorough and precise measurements of the properties of Higgs, W, and Z bosons, as well as to search for new physics. In response to the stringent performance requirements of the vertex detector for the CEPC, a baseline vertex detector prototype was tested and characterized for the first time using a 6 GeV electron beam at DESY II Test Beam Line 21. The baseline vertex detector prototype is designed with a cylindrical barrel structure that contains six double-sided detector modules (ladders). Each side of the ladder includes TaichuPix-3 sensors based on Monolithic Active Pixel Sensor (MAPS) technology, a flexible printed circuit, and a carbon fiber support structure. Additionally, the readout electronics and the Data Acquisition system were also examined during this beam test. The performance of the prototype was evaluated using an electron beam that passed through six ladders in a perpendicular direction. The offline data analysis indicates a spatial resolution of about 5 um, with detection efficiency exceeding 99 % and an impact parameter resolution of about 5.1 um. These promising results from this baseline vertex detector prototype mark a significant step toward realizing the optimal vertex detector for the CEPC.

physics.ins-det↗

Beam test of a 180 nm CMOS Pixel Sensor for the CEPC vertex detector

The proposed Circular Electron Positron Collider (CEPC) imposes new challenges for the vertex detector in terms of pixel size and material budget. A Monolithic Active Pixel Sensor (MAPS) prototype called TaichuPix, based on a column drain readout architecture, has been developed to address the need for high spatial resolution. In order to evaluate the performance of the TaichuPix-3 chips, a beam test was carried out at DESY II TB21 in December 2022. Meanwhile, the Data Acquisition (DAQ) for a muti-plane configuration was tested during the beam test. This work presents the characterization of the TaichuPix-3 chips with two different processes, including cluster size, spatial resolution, and detection efficiency. The analysis results indicate the spatial resolution better than 5 $μm$ and the detection efficiency exceeds 99.5 % for both TaichuPix-3 chips with the two different processes.

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Characterization of the response of IHEP-IME LGAD with shallow carbon to Gamma Irradiation

Low Gain Avalanche Detectors (LGAD) for the High-Granularity Timing Detector (HGTD) are crucial in reducing pileups in the High-Luminosity Large Hadron Collider. Numerous studies have been conducted on the bulk irradiation damage of LGADs. However, few studies have been carried out on the surface irradiation damage of LGAD sensors with shallow carbon implantation. In this paper, the IHEP-IME LGADs with shallow carbon implantation were irradiated up to 2 MGy using gamma irradiation to investigate surface damage. Important characteristic parameters, including leakage currents, breakdown voltage (BV), inter-pad resistances, and capacitances, were tested before and after irradiation. The results showed that the leakage current and BV increased after irradiation, whereas overall inter-pad resistance exhibited minimal change and remained above $10^9\ Ω$ before and after irradiation. Capacitance was found to be less than 4.5 pF with a slight decrease in the gain layer depletion voltage (V$_{gl}$) after irradiation. No parameter affected by the inter-pad separation was observed before and after irradiation. All characteristic parameters meet the requirements of HGTD, and this design can be used to further optimization.

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Leakage current simulations of Low Gain Avalanche Diode with improved Radiation Damage Modeling

We report precise TCAD simulations of IHEP-IME-v1 Low Gain Avalanche Diode (LGAD) calibrated by secondary ion mass spectroscopy (SIMS). Our setup allows us to evaluate the leakage current, capacitance, and breakdown voltage of LGAD, which agree with measurements' results before irradiation. And we propose an improved LGAD Radiation Damage Model (LRDM) which combines local acceptor removal with global deep energy levels. The LRDM is applied to the IHEP-IME-v1 LGAD and able to predict the leakage current well at -30 $^{\circ}$C after an irradiation fluence of $ Φ_{eq}=2.5 \times 10^{15} ~n_{eq}/cm^{2}$. The charge collection efficiency (CCE) is under development.

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Low Gain Avalanche Detectors with Good Time Resolution Developed by IHEP and IME for ATLAS HGTD project

This paper shows the simulation and test results of 50um thick Low Gain Avalanche Detectors (LGAD) sensors designed by the Institute of High Energy Physics (IHEP) and fabricated by the Institute of Microelectronics of the Chinese Academy of Sciences (IME). Three wafers have been produced with four different gain layer implant doses each. Different production processes, including variation in the n++ layer implant energy and carbon co-implantation were used. Test results show that the IHEP-IME sensors with the higher dose of gain layer have lower breakdown voltages and higher gain layer voltages from capacitance-voltage properties, which are consistent with the TCAD simulation. Beta test results show that the time resolution of IHEP-IME sensors is better than 35ps when operated at high voltage and the collected charges of IHEP-IME sensors are larger than 15fC before irradiation, which fulfill the required specifications of sensors before irradiations for the ATLAS HGTD project.

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