arXiv subjects

Joachim E. Sestoft

Publications and source records attributed to Joachim E. Sestoft.

6 recordsLinked to original sources

arXiv2025

Nanoscale photonic neuron with biological signal processing

Computational hardware designed to mimic biological neural networks holds the promise to resolve the drastically growing global energy demand of artificial intelligence. A wide variety of hardware concepts have been proposed, and among these, photonic approaches offer immense strengths in terms of power efficiency, speed and synaptic connectivity. However, existing solutions have large circuit footprints limiting scaling potential and they miss key biological functions, like inhibition. We demonstrate an artificial nano-optoelectronic neuron with a circuit footprint size reduced by at least a factor of 100 compared to existing technologies and operating powers in the picowatt regime. The neuron can deterministically receive both exciting and inhibiting signals that can be summed and treated with a non-linear function. It demonstrates several biological relevant responses and memory timescales, as well as weighting of input channels. The neuron is compatible with commercial silicon technology, operates at multiple wavelengths and can be used for both computing and optical sensing. This work paves the way for two important research paths: photonic neuromorphic computing with nanosized footprints and low power consumption, and adaptive optical sensing, using the same architecture as a compact, modular front end

cond-mat.mes-hall↗

arXiv2021

Scalable platform for nanocrystal-based quantum electronics

Unlocking the full potential of nanocrystals in electronic devices requires scalable and deterministic manufacturing techniques. A platform offering promising alternative paths to scalable production is microtomy, the technique of cutting thin lamellae with large areas containing embedded nanostructures. This platform has so far not been used for fabrication of electronic quantum devices. Here, we combine microtomy with vapor-liquid-solid growth of III/V nanowires to create a scalable platform that can deterministically transfer large arrays of single and fused nanocrystals - offering single unit control and free choice of target substrate. We fabricate electronic devices on cross-sectioned InAs nanowires with good yield and demonstrate their ability to exhibit quantum phenomena such as conductance quantization, single electron charging, and wave interference. Finally, we devise how the platform can host rationally designed semiconductor/superconductor networks relevant for emerging quantum technologies.

cond-mat.mes-hall↗

arXiv2020

Transparent Gatable Superconducting Shadow Junctions

Gate tunable junctions are key elements in quantum devices based on hybrid semiconductor-superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy probes to voltage-controlled qubit operations in gatemon and topological qubits. Common to all is that junction transparency plays a critical role. In this study, we grow single crystalline InAs, InSb and $\mathrm{InAs_{1-x}Sb_x}$ nanowires with epitaxial superconductors and in-situ shadowed junctions in a single-step molecular beam epitaxy process. We investigate correlations between fabrication parameters, junction morphologies, and electronic transport properties of the junctions and show that the examined in-situ shadowed junctions are of significantly higher quality than the etched junctions. By varying the edge sharpness of the shadow junctions we show that the sharpest edges yield the highest junction transparency for all three examined semiconductors. Further, critical supercurrent measurements reveal an extraordinarily high $I_\mathrm{C} R_\mathrm{N}$, close to the KO$-$2 limit. This study demonstrates a promising engineering path towards reliable gate-tunable superconducting qubits.

cond-mat.mtrl-sci↗

arXiv2020

Epitaxial Pb on InAs nanowires

Semiconductor-superconductor hybrids are widely used for realising complex quantum phenomena such as topological superconductivity and spins coupled to Cooper pairs. Accessing exotic regimes at high magnetic fields and increasing operating temperatures beyond the state-of-the-art requires new, epitaxially matched semiconductor-superconductor materials. The challenge is to generate favourable conditions for heterostructure formation between materials with the desired inherent properties. Here, we harness increased knowledge of metal-on-semiconductor growth to develop InAs nanowires with epitaxially matched, single crystal, atomically flat Pb films along the entire nanowire. These highly ordered heterostructures have a critical temperature of 7 K and a superconducting gap of 1.25 meV, which remains hard at 8.5 T, thereby more than doubling the available parameter space. Additionally, InAs/Pb island devics exhibit magnetic field-driven transitions from Cooper pair to single electron charging; a pre-requisite for use in topological quantum computation. Introducing semiconductor-Pb hybrids potentially enables access to entirely new regimes for an array of quantum systems.

cond-mat.mes-hall↗

arXiv2018

Field effect enhancement in buffered quantum nanowire networks

III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers. The buffered geometry allows for substantial elastic strain relaxation and a strong enhancement of field effect mobility. We show that the networks possess strong spin-orbit interaction and long phase coherence lengths with a temperature dependence indicating ballistic transport. With these findings, and the compatibility of the growth method with hybrid epitaxy, we conclude that the material platform fulfills the requirements for a wide range of quantum experiments and applications.

cond-mat.mtrl-sci↗

arXiv2017

Engineering Hybrid Epitaxial InAsSb/Al Nanowire Materials for Stronger Topological Protection

The combination of strong spin-orbit coupling, large $g$-factors, and the coupling to a superconductor can be used to create a topologically protected state in a semiconductor nanowire. Here we report on growth and characterization of hybrid epitaxial InAsSb/Al nanowires, with varying composition and crystal structure. We find the strongest spin-orbit interaction at intermediate compositions in zincblende InAs$_{1-x}$Sb$_{x}$ nanowires, exceeding that of both InAs and InSb materials, confirming recent theoretical studies \cite{winkler2016topological}. We show that the epitaxial InAsSb/Al interfaces allows for a hard induced superconducting gap and 2$e$ transport in Coulomb charging experiments, similar to experiments on InAs/Al and InSb/Al materials, and find measurements consistent with topological phase transitions at low magnetic fields due to large effective $g$-factors. Finally we present a method to grow pure wurtzite InAsSb nanowires which are predicted to exhibit even stronger spin-orbit coupling than the zincblende structure.

cond-mat.mes-hall↗