arXiv subjects

Joao Marcelo J. Lopes

Publications and source records attributed to Joao Marcelo J. Lopes.

3 recordsLinked to original sources

arXiv2025

Proximity-tuned Magnetic and Transport Anomalies in All-epitaxial Fe5-xGeTe2/WSe2 Van der Waals Heterostructures

Van der Waals (vdW) heterostructures combining two-dimensional (2D) ferromagnets and semiconducting transition-metal dichalcogenides (TMDCs) offer highly promising opportunities for tailoring 2D magnetism through interfacial proximity effects, enabling unique physical phenomena inaccessible in 3D systems and achieving functionalities beyond conventional spintronics. However, current fabrication of vdW heterostructures still relies heavily on the manual stacking of exfoliated 2D flakes, leading to critical challenges in scalability, interfacial quality, thickness control and device integration. This work reports on the realization of all-epitaxial, high-quality Fe5-xGeTe2(FGT)/WSe2 heterostructures exhibiting perpendicular magnetic anisotropy (PMA) and room-temperature ferromagnetism. The FGT/WSe2 system demonstrates temperature-driven magnetic transitions, higher-order PMA contributions and large anisotropic magnetoresistance, highlighting sublattice-specific contributions to magnetic and transport properties. Notably, the FGT/WSe2 heterostructures display unconventional physical phenomena, including thickness- and temperature-dependent sign reversal of exchange bias, a reversed thickness trend in the unconventional Hall effect, and a non-monotonic PMA-thickness dependence. These anomalies indicate pronounced interfacial contributions arising from proximity effects enhanced by epitaxial interface quality. Collectively, this study provides deep insights into the magnetic and transport properties of FGT/WSe2 vdW heterostructures, establishing a scalable platform for exploring emergent 2D physics and advancing next-generation 2D spintronic technologies.

cond-mat.mes-hall↗

arXiv2022

Nuclear-induced dephasing and signatures of hyperfine effects in isotopically purified $^{13}$C graphene

The hyperfine interaction between the spins of electrons and nuclei is both a blessing and a curse. It can provide a wealth of information when used as an experimental probing technique but it can also be destructive when it acts as a dephasive perturbation on the electronic system. In this work, we fabricated large scale single and multilayer isotopically-purified $^{13}$C graphene Hall bars to search for interaction effects between the nuclear magnetic moments and the electronic system. We find signatures of nuclei with a spin in the analysis of the weak localization phenomenon that shows a significant dichotomy in the scattering times of monolayer $^{12}$C and $^{13}$C graphene close the Dirac point. Microwave-induced electron spin flips were exploited to transfer momentum to the nuclei and build-up a nuclear field. The presence of a very weak nuclear field is encoded in a modulation of the electron Zeeman energy which shifts the energy for resonant absorption and reduces the $g$-factor.

cond-mat.mes-hall↗

arXiv2020

Conduction Mechanisms in Epitaxial NiO/Graphene Gas Sensors

Integrated, highly sensitive and reversible sensor devices for toxic and hazardous gases in environmental pollution monitoring can be realized with graphene-based materials. Here we show that, single layer graphene grown on SiC can be utilized to implement sensor devices being extremely sensitive towards NO2 showing an n-type response. A second type of sensor with an added NiO layer on top of the single layer graphene changed its response to p-type but did not reduce its sensitivity. We show that the conduction switch from n-type to p-type was not a consequence of an alteration of the graphene layer but is found to be an effect of the NiO layer. We find that the NiO leads to lowering of the Fermi level to a point that a crossing of the Dirac Point in the graphene switched the conduction type. These sensors were tested in the 100 ppb NO2 regime, showing good response and a detection limit extrapolated to be below 1 ppb. This new NiO/graphene/SiC configuration can be an attractive p-type sub-ppb sensor platform for NO2 and related gases.

cond-mat.mtrl-sci↗