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Joe C. Campbell

Publications and source records attributed to Joe C. Campbell.

13 recordsLinked to original sources

Tunable X-band opto-electronic synthesizer with ultralow phase noise

Modern communication, navigation, and radar systems rely on low noise and frequency-agile microwave sources. In this application space, photonic systems provide an attractive alternative to conventional microwave synthesis by leveraging high spectral purity lasers and optical frequency combs to generate microwaves with exceedingly low phase noise. However, these photonic techniques suffer from a lack of frequency tunability, and also have substantial size, weight, and power requirements that largely limit their use to laboratory settings. In this work, we address these shortcomings with a hybrid opto-electronic approach that combines simplified optical frequency division with direct digital synthesis to produce tunable low-phase-noise microwaves across the entire X-band. This results in exceptional phase noise at 10 GHz of -156 dBc/Hz at 10 kHz offset and fractional frequency instability of 1x10^-13 at 0.1 s. Spot tuning away from 10 GHz by 500 MHz, 1 GHz, and 2 GHz, yields phase noise at 10 kHz offset of -150 dBc/Hz, -146 dBc/Hz, and -140 dBc/Hz, respectively. The synthesizer architecture is fully compatible with integrated photonic implementations that will enable a versatile microwave source in a chip-scale package. Together, these advances illustrate an impactful and practical synthesis technique that shares the combined benefits of low timing noise provided by photonics and the frequency agility of established digital synthesis.

physics.optics

Photonic chip-based low noise microwave oscillator

Numerous modern technologies are reliant on the low-phase noise and exquisite timing stability of microwave signals. Substantial progress has been made in the field of microwave photonics, whereby low noise microwave signals are generated by the down-conversion of ultra-stable optical references using a frequency comb. Such systems, however, are constructed with bulk or fiber optics and are difficult to further reduce in size and power consumption. Our work addresses this challenge by leveraging advances in integrated photonics to demonstrate low-noise microwave generation via two-point optical frequency division. Narrow linewidth self-injection locked integrated lasers are stabilized to a miniature Fabry-Pérot cavity, and the frequency gap between the lasers is divided with an efficient dark-soliton frequency comb. The stabilized output of the microcomb is photodetected to produce a microwave signal at 20 GHz with phase noise of -96 dBc/Hz at 100 Hz offset frequency that decreases to -135 dBc/Hz at 10 kHz offset--values which are unprecedented for an integrated photonic system. All photonic components can be heterogeneously integrated on a single chip, providing a significant advance for the application of photonics to high-precision navigation, communication and timing systems.

physics.optics

Dynamic-quenching of a single-photon avalanche photodetector using an adaptive resistive switch

One of the most common approaches for quenching single-photon avalanche diodes is to use a passive resistor in series with it. A drawback of this approach has been the limited recovery speed of the single-photon avalanche diodes. High resistance is needed to quench the avalanche, leading to slower recharging of the single-photon avalanche diodes depletion capacitor. We address this issue by replacing a fixed quenching resistor with a bias-dependent adaptive resistive switch. Reversible generation of metallic conduction enables switching between low and high resistance states under unipolar bias. As an example, using a Pt/Al2O3/Ag resistor with a commercial silicon single-photon avalanche diodes, we demonstrate avalanche pulse widths as small as ~30 ns, 10x smaller than a passively quenched approach, thus significantly improving the single-photon avalanche diodes frequency response. The experimental results are consistent with a model where the adaptive resistor dynamically changes its resistance during discharging and recharging the single-photon avalanche diodes.

physics.ins-det

Biaxial Strain Modulated Valence Band Engineering in III-V Digital Alloys

Some III-V digital alloy avalanche photodiodes exhibit low excess noise. These alloys have low hole ionization coefficients due to presence of small 'minigaps', enhanced effective mass and large separation between light-hole and split-off bands in the valence band. In this letter, an explanation for the formation of the minigaps using a tight binding picture is provided. Furthermore, we demonstrate that decreasing substrate lattice constant can increase the minigap size and mass in the transport direction. This leads to reduced quantum tunneling and phonon scattering of the holes. Finally, we illustrate the band structure modification with substrate lattice constant for other III-V digital alloys.

cond-mat.mtrl-sci

Atomistic transport modeling, design principles and empirical rules for Low Noise III-V Digital Alloy Avalanche Photodiodes

A series of III-V ternary and quarternary digital alloy avalanche photodiodes (APDs) have recently been seen to exhibit very low excess noise. Using band inversion of an environment-dependent atomistic tight binding description of short period superlattices, we argue that a combination of increased effective mass, minigaps and band split-off are primarily responsible for the observed superior performance. These properties significantly limit the ionization rate of one carrier type, either holes or electrons, making the avalanche multiplication process unipolar in nature. The unipolar behavior in turn reduces the stochasticity of the multiplication gain. The effects of band folding on carrier transport are studied using the Non-Equilibrium Green's Function Method that accounts for quantum tunneling, and Boltzmann Transport Equation model for scattering. It is shown here that carrier transport by intraband tunneling and optical phonon scattering are reduced in materials with low excess noise. Based on our calculations, we propose five simple inequalities that can be used to approximately evaluate the suitability of digital alloys for designing low noise photodetectors. We evaluate the performance of multiple digital alloys using these criteria and demonstrate their validity.

cond-mat.mes-hall

Full band Monte Carlo simulation of AlInAsSb digital alloys

Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this paper, we investigate the band structure-related mechanisms that influence impact ionization. Band-structures calculated using an empirical tight-binding method and Monte Carlo simulations reveal that the mini-gaps in the conduction band do not inhibit electron impact ionization. Good agreement between the full band Monte Carlo simulations and measured noise characteristics is demonstrated.

cond-mat.mtrl-sci

Characterization of band offsets in Al$_x$In$_{1-x}$As$_y$Sb$_{1-y}$ alloys with varying Al composition

The unprecedented wide bandgap tunability (~1 eV) of Al$_x$In$_{1-x}$As$_y$Sb$_{1-y}$ latticed-matched to GaSb enables the fabrication of photodetectors over a wide range from near-infrared to mid-infrared. In this paper, the valence band-offsets in AlxIn1-xAsySb1-y with different Al compositions are analyzed by tight-binding calculations and X-ray photoelectron spectroscopy (XPS) measurements. The observed weak variation in valence band offsets is consistent with the lack of any minigaps in the valence band, compared to the conduction band.

cond-mat.mtrl-sci

A Physics Based Multiscale Compact Model of p-i-n Avalanche Photodiodes

III-V material based digital alloy Avalanche Photodiodes (APDs) have recently been found to exhibit low noise similar to Silicon APDs. The III-V materials can be chosen to operate at any wavelength in the infrared spectrum. In this work, we present a physics-based SPICE compatible compact model for APDs built from parameters extracted from an Environment-Dependent Tight Binding (EDTB) model calibrated to ab-initio Density Functional Theory (DFT) and Monte Carlo (MC) methods. Using this approach, we can accurately capture the physical characteristics of these APDs in integrated photonics circuit simulations.

physics.ins-det

Coherent Optical Clock Down-Conversion for Microwave Frequencies with 10-18 Instability

Optical atomic clocks are poised to redefine the SI second, thanks to stability and accuracy more than one hundred times better than the current microwave atomic clock standard. However, the best optical clocks have not seen their performance transferred to the electronic domain, where radar, navigation, communications, and fundamental research rely on less stable microwave sources. By comparing two independent optical-to-electronic signal generators, we demonstrate a 10 GHz microwave signal with phase that exactly tracks that of the optical clock phase from which it is derived, yielding an absolute fractional frequency instability of 1*10-18 in the electronic domain. Such faithful reproduction of the optical clock phase expands the opportunities for optical clocks both technologically and scientifically for time-dissemination, navigation, and long-baseline interferometric imaging.

physics.optics

Computational Study of Amplitude-to-Phase Conversion in a Modified Uni-Traveling Carrier (MUTC) Photodetector

We calculate the amplitude-to-phase (AM-to-PM) noise conversion in a modified unitraveling carrier (MUTC) photodetector. We obtained two nulls as measured in the experiments, and we explain their origin. The nulls appear due to the transit time variation when the average photocurrent varies, and the transit time variation is due to the change of electron velocity when the average photocurrent varies. We also show that the AM-to-PM conversion coefficient depends only on the pulse energy and is independent of the pulse duration when the duration is less than 500 fs. When the pulse duration is larger than 500 fs, the nulls of the AM-to-PM conversion coefficient shift to larger average photocurrents. This shift occurs because the increase in that pulse duration leads to a decrease in the peak photocurrent. The AM-to-PM noise conversion coefficient changes as the repetition rate varies. However, the repetition rate does not change the AM-to-PM conversion coefficient as a function of input optical pulse energy. The repetition rate changes the average photocurrent. We propose a design that would in theory improve the performance of the device.

physics.ins-det

Attosecond Timing in Optical-to-Electrical Conversion

The most frequency-stable sources of electromagnetic radiation are produced optically, and optical frequency combs provide the means for high fidelity frequency transfer across hundreds of terahertz and into the microwave domain. A critical step in this photonic-based synthesis of microwave signals is the optical-to-electrical conversion process. Here we show that attosecond (as) timing stability can be preserved across the opto-electronic interface of a photodiode, despite an intrinsic temporal response that is more than six orders of magnitude slower. The excess timing noise in the photodetection of a periodic train of ultrashort optical pulses behaves as flicker noise (1/f) with amplitude of 4 as/Sqrt(Hz) at 1 Hz offset. The corresponding fractional frequency fluctuations are 1.4x10-17 at 1 second and 5.5x10-20 at 1000 seconds. These results demonstrate that direct photodetection, as part of frequency-comb-based microwave synthesis, can support the timing performance of the best optical frequency standards, and thereby opens the possibility for generating microwave signals with significantly better stability than any existing source.

physics.optics

Optical amplification and pulse interleaving for low noise photonic microwave generation

We investigate the impact of pulse interleaving and optical amplification on the spectral purity of microwave signals generated by photodetecting the pulsed output of an Er:fiber-based optical frequency comb. It is shown that the microwave phase noise floor can be extremely sensitive to delay length errors in the interleaver, and the contribution of the quantum noise from optical amplification to the phase noise can be reduced ~10 dB for short pulse detection. We exploit optical amplification, in conjunction with high power handling modified uni-traveling carrier photodetectors, to generate a phase noise floor on a 10 GHz carrier of -175 dBc/Hz, the lowest ever demonstrated in the photodetection of a mode-locked fiber laser. At all offset frequencies, the photodetected 10 GHz phase noise performance is comparable to or better than the lowest phase noise results yet demonstrated with stabilized Ti:sapphire frequency combs.

physics.optics

Shot Noise Suppression in Avalanche Photodiodes

We identify a new shot noise suppression mechanism in a thin (~100 nm) heterostructure avalanche photodiode. In the low-gain regime the shot noise is suppressed due to temporal correlations within amplified current pulses. We demonstrate in a Monte Carlo simulation that the effective excess noise factors can be <1, and reconcile the apparent conflict between theory and experiments. This shot noise suppression mechanism is independent of known mechanisms such as Coulomb interaction, or reflection at heterojunction interfaces.

physics.comp-ph