arXiv subjects

Joel W. Ager III

Publications and source records attributed to Joel W. Ager III.

5 recordsLinked to original sources

arXiv2026

Deterministic patterning and alignment of tellurium quantum wires using nanoscale templates

Tellurium (Te) is an intriguing one-dimensional (1D) semiconductor that has recently attracted considerable interest as a p-type channel material. However, scalable synthesis methods have lacked control over the orientation and patterning of the Te atomic chains, thus limiting its practical use. Guided by theory, we overcome this challenge using nanowire-shaped templates to achieve oriented, single-crystal growth of Te on amorphous substrates. Strong alignment of Te atomic chains is achieved as template widths are reduced to sub-20 nm. This high structural order, confirmed by 4D scanning transmission electron microscopy, enables the observation of pristine quantum transport phenomena for deterministically patterned Te. Field-effect transistors exhibit well-defined conductance plateaus at 77 K due to population of individual 1D subbands. Furthermore, Coulomb blockade emerges at 1.7 K, with the Te channel acting as a gate-tunable quantum dot. This synthesis approach provides a scalable pathway for integration of Te-based quantum materials for future electronic and quantum technologies.

cond-mat.mtrl-sci↗

arXiv2025

A nanoporous capacitive electrochemical ratchet for continuous ion separations

Directed ion transport in liquid electrolyte solutions underlies many phenomena in Nature and industry. While Nature has devised structures that drive continuous ion flow without Faradaic redox reactions, artificial analogs do not exist. Here we report the first demonstration of an ion pump that drives aqueous ions against a force using a capacitive ratchet mechanism that does not require redox reactions. Modulation of an electric potential between thin metallic layers on either face of a nanoporous alumina wafer immersed in solution resulted in persistent voltages and ionic currents. This occurs due to the non-linear capacitive nature of electric double layers, whose repeated charging and discharging sustains a continuous ion flux. Ratchet driven electrodialysis was demonstrated reaching a 50% decrease in the conductivity of the solution in a dilution cell. These ratchet-based ion pumps can enable continuous desalination and selective ion separation using an electrically powered device with no moving parts.

physics.app-ph↗

arXiv2019

Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors

Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional (2D) transition metal dichalcogenides (TMDCs), such as monolayer MoS2, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect density. We show that the PL QY of as-processed MoS2 and WS2 monolayers reaches near-unity when they are made intrinsic by electrostatic doping, without any chemical passivation. Surprisingly, neutral exciton recombination is entirely radiative even in the presence of a high native defect density. This finding enables TMDC monolayers for optoelectronic device applications as the stringent requirement of low defect density is eased.

physics.app-ph↗

arXiv2015

Compliant substrate epitaxy: Au on MoS$_2$

The epitaxial growth of {111} oriented Au on MoS$_2$ is well documented despite the large lattice mismatch (~8% biaxial strain), and the fact that a Au {001} orientation results in much less elastic strain. An analysis based on density functional and linear elasticity theories reveals that the {111} orientation is stabilized by a combination of favorable surface and interfacial contributions to the energy, and the compliance of the first layer of the MoS$_2$.

cond-mat.mtrl-sci↗

arXiv2015

ab initio Electronic Transport Model with Explicit Solution to the Linearized Boltzmann Transport Equation

Accurate models of carrier transport are essential for describing the electronic properties of semiconductor materials. To the best of our knowledge, the current models following the framework of the Boltzmann transport equation (BTE) either rely heavily on experimental data (i.e., semi-empirical), or utilize simplifying assumptions, such as the constant relaxation time approximation (BTE-cRTA). While these models offer valuable physical insights and accurate calculations of transport properties in some cases, they often lack sufficient accuracy -- particularly in capturing the correct trends with temperature and carrier concentration. We present here a general transport model for calculating low-field electrical drift mobility and Seebeck coefficient of n-type semiconductors, by explicitly considering all relevant physical phenomena (i.e. elastic and inelastic scattering mechanisms). We first rewrite expressions for the rates of elastic scattering mechanisms, in terms of ab initio properties, such as the band structure, density of states, and polar optical phonon frequency. We then solve the linear BTE to obtain the perturbation to the electron distribution -- resulting from the dominant scattering mechanisms -- and use this to calculate the overall mobility and Seebeck coefficient. Using our model, we accurately calculate electrical transport properties of the compound n-type semiconductors, GaAs and InN, over various ranges of temperature and carrier concentration. Our fully predictive model provides high accuracy when compared to experimental measurements on both GaAs and InN, and vastly outperforms both semi-empirical models and the BTE-cRTA. Therefore, we assert that this approach represents a first step towards a fully ab initio carrier transport model that is valid in all compound semiconductors.

cond-mat.mtrl-sci↗