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Johan Åkerman

Publications and source records attributed to Johan Åkerman.

At least 55 records · Page 3Linked to original sources

A spinwave Ising machine

We demonstrate a spin-wave-based time-multiplexed Ising Machine (SWIM), implemented using a 5 $μ$m thick Yttrium Iron Garnet (YIG) film and off-the-shelf microwave components. The artificial Ising spins consist of 34--68 ns long 3.125 GHz spinwave RF pulses with their phase binarized using a phase-sensitive microwave amplifier. Thanks to the very low spinwave group velocity, the 7 mm long YIG waveguide can host an 8-spin MAX-CUT problem and solve it in less than 4 $μ$s while consuming only 7 $μ$J. Using a real-time oscilloscope, we follow the temporal evolution of each spin as the SWIM minimizes its energy and find both uniform and domain-propagation-like switching of the spin state. The SWIM has the potential for substantial further miniaturization, scalability, speed, and reduced power consumption, and may become a versatile platform for commercially feasible optimization problem solvers with high performance.

cond-mat.mes-hall↗

Optothermal control of spin Hall nano-oscillators

We investigate the impact of localized laser heating on the auto-oscillation properties of a 170 nm wide nano-constriction spin Hall nano-oscillators (SHNO) fabricated from a NiFe/Pt bilayer on a sapphire substrate. A 532 nm continuous wave laser is focused down to a spot size of about 500 nm at a power ranging from 0 to 12 mW. Through a comparison with resistive heating, we estimate a local temperature rise of about 8 K/mW. We demonstrate reversible laser tuning of the threshold current, the frequency, and the peak power, and find that the SHNO frequency can be tuned by up to 350 MHz, which is over three times more than the current tuning alone. Increasing the temperature also results in increased signal jitter, an increased threshold current, and a reduced maximum current for auto-oscillations. Our results open up for optical control of single SHNOs in larger SHNO networks without the need for additional voltage gates.

physics.app-ph↗

Energy-efficient W$_{\text{100-x}}$Ta$_{\text{x}}$/CoFeB/MgO spin Hall nano-oscillators

We investigate a W-Ta alloying route to reduce the auto-oscillation current densities and the power consumption of nano-constriction based spin Hall nano oscillators. Using spin-torque ferromagnetic resonance (ST-FMR) measurements on microbars of W$_{\text{100-x}}$Ta$_{\text{x}}$(5 nm)/CoFeB(t)/MgO stacks with t = 1.4, 1.8, and 2.0 nm, we measure a substantial improvement in both the spin-orbit torque efficiency and the spin Hall conductivity. We demonstrate a 34\% reduction in threshold auto-oscillation current density, which translates into a 64\% reduction in power consumption as compared to pure W-based SHNOs. Our work demonstrates the promising aspects of W-Ta alloying for the energy-efficient operation of emerging spintronic devices.

cond-mat.mes-hall↗

Fabrication of voltage gated spin Hall nano-oscillators

We demonstrate an optimized fabrication process for electric field (voltage gate) controlled nano-constriction spin Hall nano-oscillators (SHNOs), achieving feature sizes of <30 nm with easy to handle ma-N 2401 e-beam lithography negative tone resist. For the nanoscopic voltage gates, we utilize a two-step tilted ion beam etching approach and through-hole encapsulation using 30 nm HfO x . The optimized tilted etching process reduces sidewalls by 75% compared to no tilting. Moreover, the HfO x encapsulation avoids any sidewall shunting and improves gate breakdown. Our experimental results on W/CoFeB/MgO/SiO 2 SHNOs show significant frequency tunability (6 MHz/V) even for moderate perpendicular magnetic anisotropy. Circular patterns with diameter of 45 nm are achieved with an aspect ratio better than 0.85 for 80% of the population. The optimized fabrication process allows incorporating a large number of individual gates to interface to SHNO arrays for unconventional computing and densely packed spintronic neural networks.

cond-mat.mes-hall↗

Femtosecond laser comb driven perpendicular standing spin waves

We study femtosecond laser comb driven sustained and coherent spin wave (SW) generation in permalloy (Py) films over a thickness range of $d =$ 40--100 nm. A simple rapid demagnetization model describes the dependence of the observed SW intensity on laser power for all film thicknesses. In the thicker films we observe laser comb excited perpendicular standing spin waves up to third order and to 18 multiples of the 1 GHz laser repetition rate. Our results demonstrate the versatility of femtosecond combs as contact-less SW point sources over a wide range of film thickness and type of SW modes.

cond-mat.mes-hall↗

Using the photo-induced $L_3$ resonance shift in Fe and Ni as time reference for ultrafast experiments at low flux soft X-ray sources

We study the optical-pump induced ultrafast transient change of the X-ray absorption at the $L_3$ absorption resonances of the transition metals Ni and Fe in Fe$_{0.5}$Ni$_{0.5}$ alloy. We find the effect for both elements to occur simultaneously on a femtosecond timescale. This effect may hence be used as a handy cross-correlation scheme providing a time-zero reference for ultrafast optical-pump soft X-ray-probe measurement. The method benefits from a relatively simple experimental setup as the sample itself acts as time-reference tool. In particular, this technique works with low flux ultrafast soft X-ray sources. The measurements are compared to the cross-correlation method introduced in an earlier publication.

cond-mat.mtrl-sci↗

Experimental confirmation of the delayed Ni demagnetization in FeNi alloy

Element-selective techniques are central for the understanding of ultrafast spin dynamics in multi-element materials like magnetic alloys. Recently, though, it turned out that the commonly used technique of transverse magneto-optical Kerr effect (T-MOKE) in the EUV range may have linearity issues including unwanted cross talk between different elemental signals. This problem can be sizeable, which puts recent observations of ultrafast spin transfer from Fe to Ni sites in FeNi alloys into question. In this study, we investigate the Fe-to-Ni spin transfer in a cross-talk-free time-resolved X-ray magnetic circular dichroism (XMCD) experiment with a reliable time reference. We find a very similar Fe and Ni dynamics with XMCD as with T-MOKE from identical samples. Considering the non-linearities of the T-MOKE response, the agreement with our findings appears fortuitous. We discuss possible reasons why T-MOKE seems to give accurate results in this case. Our data provide the ongoing discussion about ultrafast spin-transfer mechanisms in FeNi systems with a sound experimental basis.

cond-mat.mtrl-sci↗

Roadmap of spin-orbit torques

Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.

cond-mat.mes-hall↗

Freezing and thawing magnetic droplet solitons

Magnetic droplets are non-topological magnetodynamical solitons displaying a wide range of complex dynamic phenomena with potential for microwave signal generation. Bubbles, on the other hand, are internally static cylindrical magnetic domains, stabilized by external fields and magnetostatic interactions. In its original theory, the droplet was described as an imminently collapsing bubble stabilized by spin transfer torque and, in its zero-frequency limit, as equivalent to a bubble. Without nanoscale lateral confinement, pinning, or an external applied field, such a nanobubble is unstable, and should collapse. Here, we show that we can freeze dynamic droplets into static nanobubbles by decreasing the magnetic field. While the bubble has virtually the same resistance as the droplet, all signs of low-frequency microwave noise disappear. The transition is fully reversible and the bubble can be thawed back into a droplet if the magnetic field is increased under current. Whereas the droplet collapses without a sustaining current, the bubble is highly stable and remains intact for days without external drive. Electrical measurements are complemented by direct observation using scanning transmission x-ray microscopy, which corroborates the analysis and confirms that the bubble is stabilized by pinning.

cond-mat.mes-hall↗

Frequency Stability of Spin-Hall Nano-Oscillators with Realistic Grain Structure

Nano-constriction spin-Hall nano-oscillators (NC-SHNOs) are one of the most promising alternatives among the microwave spintronics devices. They can provide highly coherent and widely tuneable microwave signals and can be fabricated at low temperatures, which makes them compatible with back-end-of-the-line CMOS processing. For its applications, the frequency stability of each device is crucial, in particular for synchronization of oscillator arrays. In this work, we focus on the influence of a realistic grain structure on the SHNO frequency stability using both measurements as well as micromagnetic simulations. Grains in the thin ferromagnetic metal films can influence the output characteristic of the SHNO since the exchange coupling is reduced locally at the grain boundaries. This work provides a novel micromagnetic simulation method, for systematic investigation of frequency instability or variability from device-to-device. Experimentally, a device-to-device frequency variability of ~270 MHz was found and in some extreme cases, a double-mode oscillation was observed in the high current operation range. This oscillation behavior was reproduced in simulations, where the inclusion of grains resulted in a frequency variability of ~100 MHz and double-mode oscillations for some particular configurations. The double modes are consistent with a partial decoupling, or non-coherent operation, of two oscillating regions located at the nano-constriction edges.

cond-mat.mes-hall↗

Memristive control of mutual SHNO synchronization for neuromorphic computing

Synchronization of large spin Hall nano-oscillators (SHNO) arrays is an appealing approach toward ultra-fast non-conventional computing based on nanoscale coupled oscillator networks. However, for large arrays, interfacing to the network, tuning its individual oscillators, their coupling, and providing built-in memory units for training purposes, remain substantial challenges. Here, we address all these challenges using memristive gating of W/CoFeB/MgO/AlOx based SHNOs. In its high resistance state (HRS), the memristor modulates the perpendicular magnetic anisotropy (PMA) at the CoFeB/MgO interface purely by the applied electric field. In its low resistance state (LRS), and depending on the voltage polarity, the memristor adds/subtracts current to/from the SHNO drive. The operation in both the HRS and LRS affects the SHNO auto-oscillation mode and frequency, which can be tuned up to 28 MHz/V. This tuning allows us to reversibly turn on/off mutual synchronization in chains of four SHNOs. We also demonstrate two individually controlled memristors to tailor both the coupling strength and the frequency of the synchronized state. Memristor gating is therefore an efficient approach to input, tune, and store the state of the SHNO array for any non-conventional computing paradigm, all in one platform.

physics.app-ph↗

Impact of intra-grain spin wave reflections on nano-contact spin torque oscillators

We investigate the origin of the experimentally observed varying current-frequency nonlinearity of the propagating spin wave mode in nano-contact spin torque oscillators. Nominally identical devices with 100 nm diameter are characterized by electrical microwave measurements and show large variation in the generated frequency as a function of drive current. This quantitative and qualitative device-to-device variation is described in terms of continuous and discontinuous nonlinear transitions between linear current intervals. The thin film grain microstructure in our samples is determined using atomic force and scanning electron microscopy to be on the scale of 30 nm. Micromagnetic simulations show that the reflection of spin waves against the grain boundaries results in standing wave resonance configurations. For a simulated device with a single artificial grain, the frequency increases linearly with the drive current until the decreased wavelength eventually forces another spin wave anti-node to be formed. This transition results in a discontinuous step in the frequency versus current relation. Simulations of complete, randomly generated grain microstructures additionally shows continuous nonlinearity and a resulting device-to-device variation in frequency that is similar to the experimental levels. The impact of temperature from 4 K to 300 K on the resonance mode-transition nonlinearity and frequency noise is investigated using simulations and it is found that the peak levels of the spectral linewidth as a function of drive current agrees quantitatively with typical levels found in experiments at room temperature.

cond-mat.mes-hall↗

A Spin Hall Ising Machine

Ising Machines (IMs) are physical systems designed to find solutions to combinatorial optimization (CO) problems mapped onto the IM via the coupling strengths of its binary spins. Using the intrinsic dynamics and different annealing schemes, the IM relaxes over time to its lowest energy state, which is the solution to the CO problem. IMs have been implemented in quantum, optical, and electronic hardware. One promising approach uses interacting nonlinear oscillators whose phases have been binarized through injection locking at twice their natural frequency. Here we demonstrate such Oscillator IMs using nano-constriction spin Hall nano-oscillator (SHNO) arrays. We show how the SHNO arrays can be readily phase binarized and how the resulting microwave power corresponds to well-defined global phase states. To distinguish between degenerate states we use phase-resolved Brillouin Light Scattering (BLS) microscopy to directly observe the individual phase of each nano-constriction.

cond-mat.mes-hall↗

Giant voltage control of spin Hall nano-oscillator damping

Spin Hall nano-oscillators (SHNOs) are emerging spintronic devices for microwave signal generation and oscillator based neuromorphic computing combining nano-scale footprint, fast and ultra-wide microwave frequency tunability, CMOS compatibility, and strong non-linear properties providing robust large-scale mutual synchronization in chains and two-dimensional arrays. While SHNOs can be tuned via magnetic fields and the drive current, neither approach is conducive for individual SHNO control in large arrays. Here, we demonstrate electrically gated W/CoFeB/MgO nano-constrictions in which the voltage-dependent perpendicular magnetic anisotropy, tunes the frequency and, thanks to nano-constriction geometry, drastically modifies the spin-wave localization in the constriction region resulting in a giant 42 % variation of the effective damping over four volts. As a consequence, the SHNO threshold current can be strongly tuned. Our demonstration adds key functionality to nano-constriction SHNOs and paves the way for energy-efficient control of individual oscillators in SHNO chains and arrays for neuromorphic computing.

physics.app-ph↗

Enhanced skyrmion motion via strip domain wall

When magnetic skyrmions move under spin orbit torque in magnetic nanowires, they experience a skyrmion Hall effect, which pushes them towards the nanowire edge where they risk being annihilated; this puts an upper limit on how fast they can be driven. However, the same magnetic multilayer harboring skyrmions can sustain a Néel-type strip domain wall along the nanowire length, potentially keeping the skyrmions separated from the edge. Here we study the interplay between current driven skyrmions and domain walls and find that they increase the annihilation current and allow the skyrmions to move faster. Based on the Thiele formalism, we confirm that the emergent longitudinal repulsive force and the modified energy landscape linked to the domain wall are responsible for the enhanced skyrmion motion. Furthermore, we identify that the longitudinal repulsive force emerges because of the broken axisymmetry in the local magnetization in front of the skyrmion. Our study uncovers key aspects in the interplay between two topological magnetic textures from different homotopy groups and may inspire new device concepts.

cond-mat.mes-hall↗

Width dependent auto-oscillating properties of constriction based spin Hall nano-oscillators

We study the current tunable microwave signal properties of nano-constriction based spin Hall nano-oscillators (SHNOs) in oblique magnetic fields as a function of the nano-constriction width, $w=$~50--140 nm. The threshold current is found to scale linearly with $w$, defining a constant threshold current density of $J_{th}=$ 1.7 $\times$ 10$^{8}$ A/cm$^2$. While the current dependence of the microwave frequency shows the same generic non-monotonic behavior for all $w\geqslant$ 80 nm, the quality of the generated microwave signal improves strongly with $w$, showing a linear $w$ dependence for both the total power and the linewidth. As a consequence, the peak power for a 140 nm nano-constriction is about an order of magnitude higher than that of a 80 nm nano-constriction. The smallest nano-constriction, $w=$ 50 nm, exhibits a different behavior with a higher power and a worse linewidth indicating a crossover into a qualitatively different narrow-constriction regime.

cond-mat.mes-hall↗

Spin-Orbit-Torque Driven Propagating Spin Waves

Spin-orbit torque (SOT) can drive sustained spin wave (SW) auto-oscillations in a class of emerging microwave devices known as spin Hall nano-oscillators (SHNOs), which have highly non-linear properties governing robust mutual synchronization at frequencies directly amenable to high-speed neuromorphic computing. However, all demonstrations have relied on localized SW modes interacting through dipolar coupling and/or direct exchange. As nanomagnonics requires propagating SWs for data transfer, and additional computational functionality can be achieved using SW interference, SOT driven propagating SWs would be highly advantageous. Here, we demonstrate how perpendicular magnetic anisotropy can raise the frequency of SOT driven auto-oscillations in magnetic nano-constrictions well above the SW gap, resulting in the efficient generation of field and current tunable propagating SWs. Our demonstration greatly extends the functionality and design freedom of SHNOs enabling long range SOT driven SW propagation for nanomagnonics, SW logic, and neuro-morphic computing, directly compatible with CMOS technology.

physics.app-ph↗

Spatial Mapping of Torques within a Spin Hall Nano-oscillator

Time-resolved scanning Kerr microscopy (TRSKM) was used to study precessional magnetization dynamics induced by a radio frequency (RF) current within a Al$_2$O$_3$/Py(5 nm)/Pt(6 nm)/Au(150 nm) spin Hall nano-oscillator structure. The Au layer was formed into two needle-shaped electrical contacts that concentrated the current in the centre of a Py/Pt mesa of 4 $μ$m diameter. Due to the spin Hall effect, current within the Pt layer drives a spin current into the Py layer, exerting a spin transfer torque (STT). By injecting RF current, and exploiting the phase-sensitivity of TRSKM and the symmetry of the device structure, the STT and Oersted field torques have been separated and spatially mapped. The STT and torque due to the in-plane Oersted field are observed to exhibit minima at the device centre that is ascribed to spreading of RF current that is not observed for DC current. Torques associated with the RF current may destabilise the position of the self-localised bullet mode excited by the DC current, and inhibit injection locking. The present study demonstrates the need to characterise both DC and RF current distributions carefully.

cond-mat.mes-hall↗