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Johan Adell

Publications and source records attributed to Johan Adell.

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What's knot to like? Observation of a linked loop quantum state

Quantum phases can be classified by topological invariants, which take on discrete values capturing global information about the quantum state. Over the past decades, these invariants have come to play a central role in describing matter, providing the foundation for understanding superfluids, magnets, the quantum Hall effect, topological insulators, Weyl semimetals and other phenomena. Here we report a remarkable linking number (knot theory) invariant associated with loops of electronic band crossings in a mirror-symmetric ferromagnet. Using state-of-the-art spectroscopic methods, we directly observe three intertwined degeneracy loops in the material's bulk Brillouin zone three-torus, $\mathbb{T}^3$. We find that each loop links each other loop twice. Through systematic spectroscopic investigation of this linked loop quantum state, we explicitly draw its link diagram and conclude, in analogy with knot theory, that it exhibits linking number $(2,2,2)$, providing a direct determination of the invariant structure from the experimental data. On the surface of our samples, we further predict and observe Seifert boundary states protected by the bulk linked loops, suggestive of a remarkable Seifert bulk-boundary correspondence. Our observation of a quantum loop link motivates the application of knot theory to the exploration of exotic properties of quantum matter.

cond-mat.mes-hall

Revealing the Heavy Quasiparticles in the Heavy-Fermion Superconductor CeCu2Si2

The superconducting order parameter of the first heavy-fermion superconductor CeCu2Si2 is currently under debate. A key ingredient to understand its superconductivity and physical properties is the quasiparticle dispersion and Fermi surface, which remains elusive experimentally. Here we present measurements from angle-resolved photoemission spectroscopy. Our results emphasize the key role played by the Ce 4f electrons for the low-temperature Fermi surface, highlighting a band-dependent conduction-f electron hybridization. In particular, we find a very heavy quasi-two-dimensional electron band near the bulk X point and moderately heavy three-dimensional hole pockets near the Z point. Comparison with theoretical calculations reveals the strong local correlation in this compound, calling for further theoretical studies. Our results provide the electronic basis to understand the heavy fermion behavior and superconductivity; implications for the enigmatic superconductivity of this compound are also discussed.

cond-mat.str-el

Magnetic topological insulator MnBi6Te10 with zero-field ferromagnetic state and gapped Dirac surface states

Magnetic topological insulators (TIs) with nontrivial topological electronic structure and broken time-reversal symmetry exhibit various exotic topological quantum phenomena. The realization of such exotic phenomena at high temperature is one of central topics in this area. We reveal that MnBi6Te10 is a magnetic TI with an antiferromagnetic ground state below 10.8 K whose nontrivial topology is manifested by Dirac-like surface states. The ferromagnetic axion insulator state with Z4 = 2 emerges once spins polarized at field as low as 0.1 T, accompanied with saturated anomalous Hall resistivity up to 10 K. Such a ferromagnetic state is preserved even external field down to zero at 2 K. Theoretical calculations indicate that the few-layer ferromagnetic MnBi6Te10 is also topologically nontrivial with a non-zero Chern number. Angle-resolved photoemission spectroscopy experiments further reveal three types of Dirac surface states arising from different terminations on the cleavage surfaces, one of which has insulating behavior with an energy gap of ~ 28 meV at the Dirac point. These outstanding features suggest that MnBi6Te10 is a promising system to realize various topological quantum effects at zero field and high temperature.

cond-mat.mtrl-sci

A topological material in the III-V family: heteroepitaxial InBi on InAs

InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi on to an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M bar high symmetry point. This demonstrates a heteroepitaxial system entirely in the III-V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradiction with other III-V materials. For the Bi termination, the study gives a consistent physical picture of the topological surface electronic structure of InBi(001) terminated by a Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination. Theoretical calculations based on relativistic density functional theory and the one-step model of photoemission clarify the relationship between the InBi(001) surface termination and the topological surface states, supporting a predominant role of the Bi bilayer termination. Furthermore, a tight-binding model based on this Bi bilayer termination with only Bi-Bi hopping terms, and no Bi-In interaction, gives a deeper insight into the spin texture.

cond-mat.str-el

Observation of vacancy-related polaron states at the surface of anatase and rutile TiO2 by high-resolution photoelectron spectroscopy

Defects in the surface region of a reducible oxide, as TiO2, have a profound effect on applications, while their nature is very much influenced by the possibility of small polaron formation. Here, we probe rutile (110) and anatase (101) single crystals via high-resolution ultraviolet photoelectron spectroscopy and resolve multiple components of the well-known defect state in the band gap. In rutile, we find two at VBM+2.1 eV and VBM+1.4 eV, which we assign to subsurface polaron traps and vacancy-bound states, respectively, confirming the predicted partial suppression of polaron formation at high vacancy concentration. New defects are created in situ on the anatase surface by the synchrotron beam. We assign a component at VBM+2.3 eV, which can be removed by annealing, to polaron states associated with surface oxygen vacancies. We also identify a second component at VBM+1.6 eV, which can not be removed by annealing, and is too deep to be associated with oxygen vacancies.

cond-mat.mtrl-sci

Electron-phonon coupling-induced kinks in the sigma band of graphene

Angle-resolved photoemission spectroscopy reveals pronounced kinks in the dispersion of the sigma band of graphene. Such kinks are usually caused by the combination of a strong electron-boson interaction and the cut-off in the Fermi-Dirac distribution. They are therefore not expected for the $σ$ band of graphene that has a binding energy of more than 3.5 eV. We argue that the observed kinks are indeed caused by the electron-phonon interaction, but the role of the Fermi-Dirac distribution cutoff is assumed by a cut-off in the density of $σ$ states. The existence of the effect suggests a very weak coupling of holes in the $σ$ band not only to the $π$ electrons of graphene but also to the substrate electronic states. This is confirmed by the presence of such kinks for graphene on several different substrates that all show a strong coupling constant of lambda=1.

cond-mat.mes-hall