arXiv subjects

Johann Osmond

Publications and source records attributed to Johann Osmond.

11 recordsLinked to original sources

arXiv2026

Nonlinear Self-Action across Temporal Regimes in Resonant Dielectric Metasurfaces

Quasi-bound states in the continuum (qBICs) enable exceptional field confinement, strongly reducing the pump intensity threshold for nonlinear light-matter interaction in dielectric metasurfaces. As a result, nonlinear self-action effects, often elusive in bulk nonlinear media, emerge at moderate excitation intensities. Here, nonlinear self-action in resonantly enhanced third-harmonic (TH) generation from a dielectric metasurface supporting a qBIC resonance is investigated across distinct temporal excitation regimes. These regimes establish different coupling conditions between the excitation and the resonant mode, causing the same nonlinear self-action to emerge through complementary intensity-dependent signatures. Under spectrally narrow picosecond excitation, resonance-enhanced TH generation shows pronounced deviations from cubic scaling at high intensities. In contrast, broadband femtosecond excitation transiently drives the resonance, encoding the nonlinear response in the spectral reshaping and broadening of the TH signal. Simulations reproduce both regimes: continuous-wave modeling captures picosecond power scaling and the role of higher-order nonlinear susceptibilities, while time-domain simulations resolve femtosecond dynamics. These results clarify how pulse duration, bandwidth, and resonant coupling determine the observable signatures of nonlinear self-action in resonant dielectric metasurfaces, linking field confinement to conversion efficiency, power-law scaling, and ultrafast spectral dynamics.

physics.optics↗

arXiv2026

Imaging superconducting weak spots through vortex-assisted THz near-field photovoltage

Nanoscale inhomogeneities are a defining feature of many superconducting materials, yet their local electromagnetic response has remained difficult to access experimentally. This is because their relevant energy scale lies in the terahertz range, where wavelengths -- on the order of hundreds of microns -- are too large to spatially resolve nanoscopic variations. Here, we demonstrate the first application of THz near-field photovoltage nanoscopy in a superconductor, achieving 300 nm spatial resolution at 2.52 THz. Scanning a current-biased NbN strip, we reveal photovoltage peaks within the bulk associated with nanoscopic defects of reduced superfluid density. The observed photovoltage follows the evolution of the vortex-dissipative state and is attributed to enhanced vortex-antivortex pair nucleation at defect sites. Together, these results open a direct route to probing how material inhomogeneities influence light-matter interactions in superconductors, with implications for superconducting devices and strongly inhomogeneous systems such as high-Tc and moiré materials.

cond-mat.supr-con↗

arXiv2025

In situ engineering hexagonal boron nitride in van der Waals heterostructures with selective SF6 etching

Van der Waals heterostructures are at the forefront in materials heterostructure engineering, offering the ultimate control in layer selectivity and capability to combine virtually any material. Hexagonal boron nitride (hBN), the most commonly used dielectric material, has proven indispensable in this field, allowing the encapsulation of active 2D materials preserving their exceptional electronic quality. However, not all device applications require full encapsulation but rather require open surfaces, or even selective patterning of hBN layers. Here, we report on a procedure to engineer top hBN layers within van der Waals heterostructures while preserving the underlying active 2D layers. Using a soft selective SF6 etching combined with a series of pre and post-etching treatments, we demonstrate that pristine surfaces can be exposed with atomic flatness while preserving the active layers electronic quality. We benchmark our technique using graphene encapsulated with hBN Hall bar devices. Using Raman spectroscopy combined with quantum transport, we show high quality can be preserved in etched regions by demonstrating low temperature carrier mobilities of 200,000 cm2Vs-1, ballistic transport probed through magnetic focusing, and intrinsic room temperature phonon-limited mobilities. Atomic force microscopy brooming and O2 plasma cleaning are identified as key pre-etching steps to obtaining pristine open surfaces while preserving electronic quality. The technique provides a clean method for opening windows into mesoscopic van der Waals devices that can be used for local probe experiments, patterning top hBN in situ, and exposing 2D layers to their environment for sensing applications.

cond-mat.mes-hall↗

arXiv2024

Decoupled few-femtosecond phase transitions in vanadium dioxide

The nature of the insulator-to-metal phase transition in vanadium dioxide (VO2) is one of the longest-standing problems in condensed-matter physics. Ultrafast spectroscopy has long promised to determine whether the transition is primarily driven by the electronic or structural degree of freedom, but measurements to date have been stymied by their sensitivity to only one of these components and/or their limited temporal resolution. Here we use ultra-broadband few-femtosecond pump-probe spectroscopy to resolve the electronic and structural phase transitions in VO2 at their fundamental time scales. We find that the system transforms into a bad-metallic phase within 10 fs after photoexcitation, but requires another 100 fs to complete the transition, during which we observe electronic oscillations and a partial re-opening of the bandgap, signalling a transient semi-metallic state. Comparisons with tensor-network simulations and density-functional theory calculations show these features originate from oscillations around the equilibrium high-symmetry atomic positions during an unprecedentedly fast structural transition, in which the vanadium dimers separate and untwist with two different timescales. Our results resolve the complete structural and electronic nature of the light-induced phase transition in VO2 and establish ultra-broadband few-femtosecond spectroscopy as a powerful new tool for studying quantum materials out of equilibrium.

cond-mat.str-el↗

arXiv2020

Narrow Line Width Quantum Emitters in an Electron-Beam-Shaped Polymer

Solid-state single photon sources (SPSs) with narrow line width play an important role in many leading quantum technologies. Within the wide range of SPSs studied to date, single fluorescent molecules hosted in organic crystals stand out as bright, photostable SPSs with a lifetime-limited optical resonance at cryogenic temperatures. Furthermore, recent results have demonstrated that photostability and narrow line widths are still observed from single molecules hosted in a nanocrystalline environment, which paves the way for their integration with photonic circuitry. Polymers offer a compatible matrix for embedding nanocrystals and provide a versatile yet low-cost approach for making nanophotonic structures on chip that guide light and enhance coupling to nanoscale emitters. Here, we present a deterministic nanostructuring technique based on electron-beam lithography for shaping polymers with embedded single molecules. Our approach provides a direct means of structuring the nanoscale environment of narrow line width emitters while preserving their emission properties.

physics.app-ph↗

arXiv2019

Electrically Driven Varifocal Silicon Metalens

Optical metasurfaces have shown to be a powerful approach to planar optical elements, enabling an unprecedented control over light phase and amplitude. At that stage, where wide variety of static functionalities have been accomplished, most efforts are being directed towards achieving reconfigurable optical elements. Here, we present our approach to an electrically controlled varifocal metalens operating in the visible frequency range. It relies on dynamically controlling the refractive index environment of a silicon metalens by means of an electric resistor embedded into a thermo-optical polymer. We demonstrate precise and continuous tuneability of the focal length and achieve focal length variation larger than the Rayleigh length for voltage as small as 12 volts. The system time-response is of the order of 100 ms, with the potential to be reduced with further integration. Finally, the imaging capability of our varifocal metalens is successfully validated in an optical microscopy setting. Compared to conventional bulky reconfigurable lenses, the presented technology is a lightweight and compact solution, offering new opportunities for miniaturized smart imaging devices.

physics.optics↗

arXiv2018

Probing the Ultimate Plasmon Confinement Limits with a Van der Waals heterostructure

The ability to confine light into tiny spatial dimensions is important for applications such as microscopy, sensing and nanoscale lasers. While plasmons offer an appealing avenue to confine light, Landau damping in metals imposes a trade-off between optical field confinement and losses. We show that a graphene-insulator-metal heterostructure can overcome that trade-off, and demonstrate plasmon confinement down to the ultimate limit of the lengthscale of one atom. This is achieved by far-field excitation of plasmon modes squeezed into an atomically thin hexagonal boron nitride dielectric h-BN spacer between graphene and metal rods. A theoretical model which takes into account the non-local optical response of both graphene and metal is used to describe the results. These ultra-confined plasmonic modes, addressed with far-field light excitation, enables a route to new regimes of ultra-strong light-matter interactions.

cond-mat.mes-hall↗

arXiv2017

Dynamical control over the confinement of spatially indirect excitons in electrostatic traps of GaAs coupled quantum wells

We study spatially indirect excitons confined in a 10 $μ$m wide electrostatic trap of a GaAs double quantum well. We introduce a technique to control the amplitude of the electric field interacting with the excitons electric dipole, with nanosecond precision. Our approach relies on electronic waveforms corrected for the distorsions occurring at highest frequencies so that impedance matching is not necessary. Thus, we manipulate the confinement of cold gases without inducing sizeable perturbations down to sub-Kelvin bath temperatures.

cond-mat.mes-hall↗

arXiv2015

Time-Domain Separation of Optical Properties From Structural Transitions in Resonantly Bonded Materials

The extreme electro-optical contrast between crystalline and amorphous states in phase change materials is routinely exploited in optical data storage and future applications include universal memories, flexible displays, reconfigurable optical circuits, and logic devices. Optical contrast is believed to arise due to a change in crystallinity. Here we show that the connection between optical properties and structure can be broken. Using a unique combination of single-shot femtosecond electron diffraction and optical spectroscopy, we simultaneously follow the lattice dynamics and dielectric function in the phase change material Ge2Sb2Te5 during an irreversible state transformation. The dielectric function changes by 30% within 100 femtoseconds due to a rapid depletion of electrons from resonantly-bonded states. This occurs without perturbing the crystallinity of the lattice, which heats with a 2 ps time constant. The optical changes are an order-of-magnitude larger than those achievable with silicon and present new routes to manipulate light on an ultrafast timescale without structural changes.

cond-mat.mtrl-sci↗

arXiv2012

Optical nano-imaging of gate-tuneable graphene plasmons

The ability to manipulate optical fields and the energy flow of light is central to modern information and communication technologies, as well as quantum information processing schemes. However, as photons do not possess charge, controlling them efficiently by electrical means has so far proved elusive. A promising way to achieve electric control of light could be through plasmon polaritons - coupled excitations of photons and charge carriers - in graphene. In this two-dimensional sheet of carbon atoms, it is expected that plasmon polaritons and their associated optical fields can be readily tuned electrically by varying the graphene carrier density. While optical graphene plasmon resonances have recently been investigated spectroscopically, no experiments so far have directly resolved propagating plasmons in real space. Here, we launch and detect propagating optical plasmons in tapered graphene nanostructures using near-field scattering microscopy with infrared excitation light. We provide real-space images of plasmonic field profiles and find that the extracted plasmon wavelength is remarkably short - over 40 times smaller than the wavelength of illumination. We exploit this strong optical field confinement to turn a graphene nanostructure into a tunable resonant plasmonic cavity with extremely small mode volume. The cavity resonance is controlled in-situ by gating the graphene, and in particular, complete switching on and off of the plasmon modes is demonstrated, thus paving the way towards graphene-based optical transistors. This successful alliance between nanoelectronics and nano-optics enables the development of unprecedented active subwavelength-scale optics and a plethora of novel nano-optoelectronic devices and functionalities, such as tunable metamaterials, nanoscale optical processing and strongly enhanced light-matter interactions for quantum devices and (bio)sensors.

cond-mat.mtrl-sci↗

arXiv2011

Hybrid graphene-quantum dot phototransistors with ultrahigh gain

Graphene has emerged as a novel platform for opto-electronic applications and photodetector, but the inefficient conversion from light to current has so far been an important roadblock. The main challenge has been to increase the light absorption efficiency and to provide a gain mechanism where multiple charge carriers are created from one incident photon. Here, we take advantage of the strong light absorption in quantum dots and the two-dimensionality and high mobility of graphene to merge these materials into a hybrid system for photodetection with extremely high sensitivity. Exploiting charge transfer between the two materials, we realize for the first time, graphene-based phototransistors that show ultrahigh gain of 10^8 and ten orders of magnitude larger responsivity compared to pristine graphene photodetectors. These hybrid graphene-quantum dot phototransistors exhibit gate-tunable sensitivity, spectral selectivity from the shortwave infrared to the visible, and can be integrated with current circuit technologies.

cond-mat.mes-hall↗