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Johann Peter Reithmaier

Publications and source records attributed to Johann Peter Reithmaier.

13 recordsLinked to original sources
arXiv2026

Two-photon interference from as-grown InAsP/InP quantum dots under detuned excitation

In this study, we investigate as-grown InAsP/InP quantum dots emitting in the third telecommunication window under detuned quasi-resonant excitation. A large excitation-emission detuning of 32 meV enables efficient suppression of scattered laser light while retaining several advantages of near-resonant excitation. The single-photon nature of the emission is confirmed by a Hanbury Brown and Twiss experiment, yielding a raw second-order autocorrelation value of $g_{\mathrm{raw}}^{(2)}(0)=0.076(6)$. Hong-Ou-Mandel measurement is used to determine the degree of indistinguishability of single photons and reveal as measured visibilities of $V=0.094(4)$ and $V=0.106(5)$ for excitation pulse separations of 13.1 ns and 5.3 ns, respectively. These results demonstrate the potential of as-grown InAsP/InP quantum dots grown via molecular beam epitaxy under not experimentally demanding detuned excitation for generating indistinguishable telecom single photons. Further improvements are to be achieved through Purcell enhancement in optical cavities.

quant-ph↗
arXiv2025

On the relationship between noise squeezing and Rabi oscillations in active quantum dot ensembles

Squeezed light is usually generated using passive nonlinear materials. Semiconductor lasers and optical amplifiers (SOAs) also offer nonlinearities but they differ in that they add amplified spontaneous emission (ASE). Squeezing to below the vacuum level has been demonstrated in a semiconductor laser, and gain saturation in SOAs can likewise reduce photon-number fluctuations to, and in some cases below, the vacuum limit. Here, we demonstrate that Rabi oscillations in room-temperature quantum-dot SOAs, induced by short resonant pulses, cause cyclical noise modification that repeat with every change of 2pi in pulse area, corresponding to a fourfold increase in excitation pulse energy. Homodyne measurements reveal in those cases elliptical Wigner functions corresponding to squeezed thermal states and in certain regimes, the state is squeezed to below the vacuum level. At other pulse areas, the Wigner functions are circular representing thermal coherent states. This periodic behavior persists over two orders of magnitude in input pulse energy, spanning several 2pi cycles. Under specific bias and excitation conditions, we further observe a non-Gaussian Wigner function featuring two bright lobes. Although its precise nature remains unresolved, this structure may be consistent with a Schrodinger cat - like state whose accompanying negativity is suppressed due to an approximately 10 dB optical output loss. Notably, the emergence of this non-Gaussian state is itself periodic in excitation pulse energy.

cond-mat.mes-hall↗
arXiv2024

Strategies for the alignment of electronic states in quantum-dot tunnel-injection lasers and their influence on the emission dynamics

In quantum-dot tunnel-injection lasers, the excited charge carriers are efficiently captured from the bulk states via an injector quantum well and then transferred into the quantum dots via a tunnel barrier. The alignment of the electronic levels is crucial for the high efficiency of these processes and especially for the fast modulation dynamics of these lasers. In particular, the quantum mechanical nature of the tunneling process must be taken into account in the transition from two-dimensional quantum well states to zero-dimensional quantum dot states. This results in hybrid states, from which the scattering into the quantum-dot ground states takes place. We combine electronic state calculations of the tunnel-injection structures with many-body calculations of the scattering processes and insert this into a complete laser simulator. This allows us to study the influence of the structural design and the resulting electronic states as well as limitations due to inhomogeneous quantum-dot distributions. We find that the optimal electronic state alignment deviates from a simple picture in which the of the quantum-dot ground state energies are one LO-phonon energy below the injector quantum well ground state.

cond-mat.mes-hall↗
arXiv2022

Carrier dynamics in quantum-dot tunnel-injection structures: microscopic theory and experiment

Tunneling-injection structures are incorporated in semiconductor lasers in order to overcome the fundamental dynamical limitation due to hot carrier injection by providing a carrier transport path from a cold carrier reservoir. The tunneling process itself depends on band alignment between quantum-dot levels and the injector quantum well, especially as in these devices LO-phonon scattering is dominant. Quantum dots with their first excited state near the quantum well bottom profit most from tunnel coupling. As inhomogeneous broadening is omnipresent in quantum dot structures, this implies that individual members of the ensemble couple differently to the injector quantum well. Quantum dots with higher energy profit less, as the phonon couples to higher, less occupied states. Likewise, if the energy difference between ground state and quantum well exceeds the LO phonon energy, scattering becomes increasingly inefficient. Therefore, within 20-30meV we find Quantum Dots that benefit substantially different from the tunnel coupling. Furthermore, in quantum dots with increasing confinement depth, excited states become sucessively confined. Here, scattering gets more efficient again, as subsequent excited states reach the phonon resonance with the quantum well bottom. Our results provide guidelines for the optimization of tunnel-injection lasers. Theoretical results for electronic state caluluations in connection with carrier-phonon and carrier-carrier scattering are compared to experimental results of the temporal gain recovery after a short pulse perturbation.

cond-mat.mes-hall↗
arXiv2021

Magneto-optical characterization of trions in symmetric InP-based quantum dots for quantum communication applications

Magneto-optical parameters of trions in novel large and symmetric InP-based quantum dots, uncommon for molecular beam epitaxy grown nanostructures, with emission in the third telecom window, are measured in Voigt and Faraday configurations of external magnetic field. The diamagnetic coefficients are found to be in the range of 1.5-4 μeV/{\T^2}, and 8-15 μeV/{\T^2}, respectively out of plane and in plane of the dots. The determined values of diamagnetic shifts are related to the anisotropy of dot sizes. Trion g-factors are measured to be relatively small, in the range of 0.3-0.7 and 0.5-1.3, in both configurations respectively. Analysis of single carrier g-factors, based on the formalism of spin-correlated orbital currents, leads to the similar values for hole and electron of {\sim} 0.25 for Voigt and {\g_e} {\approx} -5; {\g_h} {\approx} +6 for Faraday configuration of magnetic field. Values of g-factors close to zero measured in Voigt configuration make the investigated dots promising for electrical tuning of g-factor sign, required for schemes of single spin control in qubit applications.

cond-mat.mes-hall↗
arXiv2020

Optical and electronic properties of symmetric InAs/InGaAlAs/InP quantum dots formed by a ripening process in molecular beam epitaxy: a promising system for broad-range single-photon telecom emitters

We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The method leads to the growth of in-plane symmetric QDs of low surface density, characterized by a multimodal size distribution resulting in a spectrally broad emission in the range of $1.4-2.0$ $μ$m, essential for many near-infrared photonic applications. We find that, in contrast to the InAs/InP system, the multimodal distribution results here from a two-monolayer difference in QD height between consecutive families of dots. This may stem from the long-range ordering in the quaternary barrier alloy that stabilizes QD nucleation. Measuring the photoluminescence (PL) lifetime of the spectrally broad emission, we find a nearly dispersionless value of $1.3\pm0.3$ ns. Finally, we examine the temperature dependence of emission characteristics. We underline the impact of localized states in the wetting layer playing the role of carrier reservoir during thermal carrier redistribution. We determine the hole escape to the InAlGaAs barrier to be a primary PL quenching mechanism in these QDs.

cond-mat.mes-hall↗
arXiv2020

Room Temperature Quantum Coherent Revival in an Ensemble of Artificial Atoms

We report a demonstration of the hallmark concept of quantum optics: periodic collapse and revival of quantum coherence (QCR) in a room temperature ensemble of quantum dots (QD). Control over quantum states, inherent to QCR, together with the dynamical QD properties present an opportunity for practical room temperature building blocks of quantum information processing. The amplitude decay of QCR is dictated by the QD homogeneous linewidth, thus, enabling its extraction in a double-pulse Ramsey-type experiment. The more common photon echo technique was also invoked and yielded the same linewidth. Measured electrical bias and temperature dependencies of the transverse relaxation times enable to determine the two main decoherence mechanisms: carrier-carrier and carrier-phonon scatterings.

quant-ph↗
arXiv2018

Telecom wavelength single quantum dots with very small excitonic fine-structure splitting

We report on molecular beam epitaxy growth of symmetric InAs/InP quantum dots (QDs) emitting at telecom C-band (1.55 $μ$m) with ultra-small excitonic fine-structure splitting of ~2 $μ$eV. The QDs are grown on distributed Bragg reflector and systematically characterized by micro-photoluminescence ($μ$-PL) measurements. One order of magnitude of QD PL intensity enhancement is observed in comparison with as-grown samples. Combination of power-dependent and polarization-resolved measurements reveal background-free exciton, biexciton and dark exciton emission with resolution-limited linewidth below 35 $μ$eV and biexciton binding energy of ~1 meV. The results are confirmed by statistical measurements of about 20 QDs.

physics.app-ph↗
arXiv2016

Coherent control in room-temperature quantum dot semiconductor optical amplifiers using shaped pulses

We demonstrate the ability to control quantum coherent Rabi-oscillations in a room-temperature quantum dot semiconductor optical amplifier (SOA) by shaping the light pulses that trigger them. The experiments described here show that when the excitation is resonant with the short wavelength slope of the SOA gain spectrum, a linear frequency chirp affects its ability to trigger Rabi-oscillations within the SOA: A negative chirp inhibits Rabi-oscillations whereas a positive chirp can enhance them, relative to the interaction of a transform limited pulse. The experiments are confirmed by a numerical calculation that models the propagation of the experimentally shaped pulses through the SOA.

physics.optics↗
arXiv2015

Towards Faster InP Photonic Crystal All-Optical-Gates

We demonstrated a two-fold acceleration of the fast time constant characterising the recovery of a P-doped Indium-Phosphide Photonic Crystal all-optical gate. Time-resolved spectral analysis is compared with a three-dimensional drift-diffusion model for the carrier dynamics, demonstrating the transition from the ambipolar to the faster minority carrier dominated diffusion regime. This open the perspective for faster yet efficient nanophotonic all-optical gates.

physics.optics↗
arXiv2014

Nonlinear pulse propagation in InAs/InP quantum-dot optical amplifiers: Rabi-oscillations in the presence of non-resonant nonlinearities

We study the interplay between coherent light-matter interactions and non-resonant pulse propagation effects when ultra-short pulses propagate in room-temperature quantum-dot (QD) semiconductor optical amplifiers (SOAs). The signatures observed on a pulse envelope after propagating in a transparent SOA, when coherent Rabi-oscillations are absent, highlight the contribution of two-photon absorption (TPA), and its accompanying Kerr-like effect, as well as of linear dispersion, to the modification of the pulse complex electric field profile. These effects are incorporated into our previously developed finite-difference time-domain comprehensive model that describes the interaction between the pulses and the QD SOA. The present, generalized, model is used to investigate the combined effect of coherent and non-resonant phenomena in the gain and absorption regimes of the QD SOA. It confirms that in the QD SOA we examined, linear dispersion in the presence of the Kerr-like effect causes pulse compression, which counteracts the pulse peak suppression due to TPA, and also modifies the patterns which the coherent Rabi-oscillations imprint on the pulse envelope under both gain and absorption conditions. The inclusion of these effects leads to a better fit with experiments and to a better understanding of the interplay among the various mechanisms so as to be able to better analyze more complex future experiments of coherent light-matter interaction induced by short pulses propagating along an SOA.

physics.optics↗
arXiv2012

Electron wavefunction probing in room-temperature semiconductors: direct observation of Rabi oscillations and self-induced transparency

Quantum coherent light-matter interactions have been at the forefront of scientific interest since the fundamental predictions of Einstein and the later work of Rabi. Direct observation of quantum coherent interactions entails probing the electronic wavefunction which requires that the electronic state of the matter does not de-phase during the measurement, a condition that can be satisfied by lengthening the coherence time or by shortening the observation time. The short de-phasing time in semiconductors has dictated that all coherent effects reported to date have been recorded directly only at cryogenic temperatures. Here we report on the first direct electronic wavefunction probing in a room-temperature semiconductor. Employing an ultrafast characterization scheme we have demonstrated Rabi oscillations and self-induced transparency in an electrically driven, room-temperature semiconductor laser amplifier, revealing the most intimate details of the light-matter interactions seen to date. The ability to employ quantum effects in solid-state media, which operate at elevated temperatures, will finally bring true quantum mechanical concepts into the realm of practical devices.

cond-mat.mes-hall↗