arXiv subjects

Johann Stachurski

Publications and source records attributed to Johann Stachurski.

3 recordsLinked to original sources

arXiv2026

Depth Control of Room-Temperature Quantum Emitters in Gallium Nitride

Bright quantum emitters are key components for quantum communication systems. Radiative point defects in gallium nitride (GaN) are promising candidates for room-temperature single-photon emission, operating from the visible to the telecom O-band. Despite their potential, their integration into photonic structures has remained limited in the literature, with experimental photon extraction efficiencies far below simulated predictions. To identify the origin of this limitation, we investigate visible and near-infrared quantum emitters in GaN epilayers grown on $c$-plane sapphire substrates exhibiting narrow linewidths ($\sim$4 nm), high photon count rates ($ > $2 MHz), and strong antibunching, reaching $g^{(2)}(0)$ values as low as 0.06 at room temperature. We find that these emitters are located near the GaN/substrate interface, explaining their limited coupling to optical modes. Building on this observation, we show that the insertion of a thin low-temperature GaN interlayer enables the formation of quantum emitters at arbitrary depths with sub-60 nm accuracy, independent of the substrate. The intentionally introduced emitters retain optical properties comparable to naturally occurring ones, including narrow linewidths ($\sim$6 nm), saturation count rates exceeding 1.5 MHz, high Debye-Waller factors (0.69-0.98), and strong antibunching. The resulting epilayer fully coalesces within less than 250 nm ensuring compatibility with GaN-based cavity fabrication and enabling emitter placement within intrinsic regions of p-i-n diode architectures. These results mark a decisive step toward efficient emitter-cavity coupling, enabling the realization of cavity-enhanced quantum emission in GaN.

cond-mat.mes-hall↗

arXiv2022

Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots

III-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature. Here, we report on the evolution of the emission properties of self-assembled GaN/AlN QDs for temperatures ranging from 5 to 300K. We carefully track the photoluminescence of a single QD and measure an optimum single photon purity of g(2)(0) = 0.05+-0.02 at 5 K and 0.17+-0.8 at 300 K. We complement this study with temperaturedependent time-resolved photoluminescence measurements (TRPL) performed on a QD ensemble to further investigate the exciton recombination dynamics of such polar zero-dimensional nanostructures. By comparing our results to past reports, we emphasize the complexity of recombination processes in this system. Instead of the more conventional mono-exponential decay typical of exciton recombination, TRPL transients display a bi-exponential feature with short- and long-lived components that persist in the low excitation regime. From the temperature insensitivity of the long-lived excitonic component, we first discard the interplay of dark-to-bright state refilling in the exciton recombination process. Besides, this temperature-invariance also highlights the absence of nonradiative exciton recombinations, a likely direct consequence of the strong carrier confinement observed in GaN/AlN QDs up to 300K. Overall, our results support the viability of these dots as a potential single-photon source for quantum applications at room temperature.

physics.optics↗

arXiv2020

Towards bright and pure single photon emitters at 300 K based on GaN quantum dots on silicon

Quantum dots (QDs) based on III-nitride semiconductors are promising for single photon emission at non-cryogenic temperatures due to their large exciton binding energies. Here, we demonstrate GaN QD single photon emitters operating at 300 K with $g^{(2)}(0) = 0.17 \pm 0.08$ under continuous wave excitation. At this temperature, single photon emission rates up to $6\times10^6 \, \text{s}^{-1}$ are reached while $g^{(2)}(0) \leq 0.5$ is maintained. Our results are achieved for GaN QDs embedded in a planar AlN layer grown on silicon, representing a promising pathway for future interlinkage with optical waveguides and cavities. These samples allow exploring the limiting factors to key performance metrics for single photon sources, such as brightness and single photon purity. While high brightness is assured by large exciton binding energies, the single photon purity is mainly affected by the spectral overlap with the biexcitonic emission. Thus, the performance of a GaN QD as a single photon emitter depends on the balance between the emission linewidth and the biexciton binding energy. We identify small GaN QDs with an emission energy in excess of 4.2 eV as promising candidates for future room temperature applications, since the biexciton binding energy becomes comparable to the average emission linewidth of around 55 meV.

cond-mat.mes-hall↗