arXiv subjects

Johannes Aberl

Publications and source records attributed to Johannes Aberl.

13 recordsLinked to original sources

arXiv2026

Self-Assembled Telecom Color Centers in Silicon and Their Growth Environment

Artificial atoms based on color centers in silicon (SiCCs) have recently emerged as promising candidates for highly integrable and scalable key components in photonic quantum technology, including telecom single-photon sources and spin memory devices. A novel all-epitaxial fabrication technique for SiCCs, based on ultra-low-temperature (ULT) molecular beam epitaxy (MBE), addresses limitations of conventional fabrication via ion implantation, such as vertical ion straggle and collateral crystal lattice damage. This method solely relies on self-assembly of SiCCs during kinetically-limited growth of (carbon-doped) Si(:C) at ULTs <~350°C. The latter requires an extraordinary pristine growth environment to prevent unintended defect formation caused by the incorporation of impurities from the background vapor; however, so far, no study has specifically addressed how exactly the vacuum conditions during epitaxy influence SiCC formation, their optical properties, and the quality of the surrounding crystal matrix. Here, we investigate the impact of the growth pressure and the substrate temperature on the self-assembly and photoluminescence (PL) properties of important SiCCs, such as W, G, G', and T centers. Further, we use PL and Doppler broadening variable energy positron annihilation spectroscopy to emphasize the role of the growth pressure in suppressing the luminescence background, which is crucial for advancing quantum photonics applications.

cond-mat.mes-hall↗

arXiv2025

Low-density InGaAs/AlGaAs Quantum Dots in Droplet-Etched Nanoholes

Over the past two decades, epitaxial semiconductor quantum dots (QDs) have demonstrated very promising properties as sources of single photons and entangled photons on-demand. Among different growth methods, droplet etching epitaxy has allowed the growth of almost strain-free QDs, with low and controllable surface densities, small excitonic fine structure splitting (FSS), and fast radiative decays. Here, we extend the local droplet etching technique to In(Ga)As QDs in AlGaAs, thereby increasing the achievable emission wavelength range beyond that accessible to GaAs/AlGaAs QDs, while benefiting from the aforementioned advantages of this growth method. We observe QD densities of $\sim 0.2\ μ\mathrm{m}^{-2}$, FSS values as small as $3\ μ\mathrm{eV}$, and short radiative lifetimes of $\sim 300\ \mathrm{ps}$, while extending the achievable emission range to $\sim 920\ \mathrm{nm}$ at cryogenic temperatures. We envision these QDs to be particularly suitable for integrated quantum photonics applications.

physics.app-ph↗

arXiv2024

Strain-induced dynamic control over the population of quantum emitters in two-dimensional materials

The discovery of quantum emitters (QEs) in two-dimensional materials (2D) has triggered a surge of research to assess their suitability for quantum photonics. While their microscopic origin is still the subject of intense studies, position-controlled QEs are routinely fabricated using static strain gradients, which are used to drive excitons towards localized regions of the crystal where quantum light emission takes place. However, the use of strain in a dynamic fashion to control the brightness of single-photon sources in 2D materials has not been explored so far. In this work, we address this challenge by introducing a novel hybrid semiconductorpiezoelectric device in which WSe2 monolayers are integrated onto piezoelectric pillars that provide both static and dynamic strains. The static strains are first used to induce the formation of QEs, whose emission shows photon anti-bunching. Their energy and brightness are then controlled via the application of voltages to the piezoelectric pillars. Numerical simulations combined with drift-diffusion equations show that these effects are due to a strain-induced modification of the confining-potential landscape, which in turn leads to a net redistribution of excitons among the different QEs. Our work provides a method to dynamically control the brightness of single photon sources based on 2D materials.

cond-mat.mtrl-sci↗

arXiv2024

Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment

Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport based on silicon (Si) technology. Here, we investigate the direct epitaxial growth of two-dimensional high-quality crystalline Ge layers on Si deposited at ultra-low growth temperatures ($T_{Ge} = 100^{\circ}\mathrm{C}-350^{\circ}\mathrm{C}$) and pristine growth pressures ($\lesssim 10^{-10}\,\mathrm{mbar}$). First, we show that $T_{Ge}$ does not degrade the crystal quality of homoepitaxial Ge/Ge(001) by comparing the point defect density using positron annihilation lifetime spectroscopy. Subsequently, we present a systematic investigation of the Ge/Si(001) heteroepitaxy, varying the Ge coverage ($θ_{Ge}$, 1, 2, 4, 8, 12, and 16 nm) and $T_{Ge}$ ($100^{\circ}\mathrm{C}$ to $300^{\circ}\mathrm{C}$, in increments of $50^{\circ}\mathrm{C}$) to assess the influence of these parameters on the layer's structural quality. Atomic force microscopy revealed a rippled surface topography with superimposed grainy features and the absence of three-dimensional structures, such as quantum dots. Transmission electron microscopy unveiled pseudomorphic, grains of highly crystalline growth separated by defective domains. Thanks to nanobeam scanning x-ray diffraction measurements, we were able to evidence the lattice strain fluctuations due to the ripple-like structure of the layers. We conclude that the heteroepitaxial strain contributes to the formation of the ripples, which originate from the kinetic limitations of the ultra-low temperatures.

cond-mat.mtrl-sci↗

arXiv2024

A group-IV double heterostructure light emitting diode for room temperature gain in Silicon

The lack of straightforward epitaxial integration of useful telecom lasers on silicon remains the major bottleneck for bringing optical interconnect technology down to the on-chip level. Crystalline silicon itself, an indirect semiconductor, is a poor light emitter. Here, we identify conceptionally simple Si/Si$_{1-x}$Ge$_x$/Si double heterostructures (DHS) with large Ge content ($x \gtrsim 0.4$) as auspicious gain material suitable for Si-based integrated optics. In particular, using self-consistent Poisson-current transport calculations, we show that Si diodes containing a 16 nm thick Si$_{1-x}$Ge$_x$ layer of high crystalline quality, centered at the p-n junction, results in efficient carrier accumulation in the DHS and gain if the diode is driven in forward direction. Despite the high strain, we unambiguously demonstrate that such prior unattainable defect-free DHS can be fabricated using ultra-low temperature epitaxy at pristine growth pressures. Telecom light emission is persistent up to 360 K, and directly linked to a ~160 meV high conduction band barrier for minority electron injection. This epitaxy approach allows further increasing the Ge content in the DHS and creating dot-in-well heterostructures for which even higher gains are predicted. Thus, the surprisingly facile DHS presented here can be an essential step toward novel classes of group-IV optoelectronic devices for silicon photonics.

cond-mat.mes-hall↗

arXiv2024

Telecom light-emitting diodes based on nanoconfined self-assembled silicon-based color centers

Silicon color centers (SiCCs) have recently emerged as potential building blocks for light emitters in Si photonics, quantum emitters with spin storage capabilities, and Si-based quantum repeaters. We have recently developed a non-invasive method to engineer carbon-related SiCCs confined to ultra-thin nanolayers within a pristine crystalline environment, which is of utmost importance for the photostability of SiCCs. Here, we demonstrate embedding these C-doping-based SiCCs into the only 9 nm wide intrinsic region of a p-i-n diode using the epitaxial self-assembly of color centers. We report electrically-pumped light emission with an exponential increase in the intensity as a function of the driving current until saturation. We associate this property with the shift of quasi-Fermi-level position upon electrical driving, which simultaneously improves the spectral homogeneity of the engineered SiCCs. Our study demonstrates the electrical control and driving of near-infrared emitters in high-quality silicon diodes, an essential milestone for advancing classical and quantum optoelectronics.

cond-mat.mes-hall↗

arXiv2024

All epitaxial self-assembly of vertically-confined silicon color centers using ultra-low temperature epitaxy

Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC fabrication, deterministic control over the vertical emitter position is impossible due to ion-implantation's stochastic nature. To overcome this bottleneck towards high-yield integration, we demonstrate a radically innovative creation method for various SiCCs, solely relying on epitaxial growth of Si and C-doped Si at atypically-low temperatures in a ultra-clean growth environment. These telecom emitters can be confined within sub-1nm thick layers embedded at arbitrary vertical positions within a highly crystalline Si matrix. Tuning growth conditions and doping, different SiCC types, e.g., W-centers, T-centers, G-centers, or derivatives like G'-centers can be created, which are particularly promising as Si-based single-photon sources and spin-photon interfaces. The zero-phonon emission from G'-centers can be conveniently tuned by the C-concentration, leading to a systematic wavelength shift and linewidth narrowing towards low emitter densities.

cond-mat.mes-hall↗

arXiv2022

Single SiGe Quantum Dot Emission Deterministically Enhanced in a High-Q Photonic Crystal Resonator

We report the resonantly enhanced radiative emission from a single SiGe quantum dot (QD), which is deterministically embedded into a bichromatic photonic crystal resonator (PhCR) at the position of its largest modal electric field by a scalable method. By optimizing our molecular beam epitaxy (MBE) growth technique, we were able to reduce the amount of Ge within the whole resonator to obtain an absolute minimum of exactly one QD, accurately positioned by lithographic methods relative to the PhCR, and an otherwise flat, a few monolayer thin, Ge wetting layer (WL). With this method, record quality (Q) factors for QD-loaded PhCRs up to $Q\sim 10^5$ are achieved. A comparison with control PhCRs on samples containing a WL but no QDs is presented, as well as a detailed analysis of the dependence of the resonator-coupled emission on temperature, excitation intensity, and emission decay after pulsed excitation. Our findings undoubtedly confirm a single QD in the center of the resonator as a potentially novel photon source in the telecom spectral range.

physics.optics↗

arXiv2021

Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots

The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it challenging to achieve efficient light emission. We address this problem by strain engineering in ordered arrays of vertically close-stacked SiGe quantum dot (QD) pairs. The strain induced by the respective lower QD creates a preferential nucleation site for the upper one and strains the upper QD as well as the Si cap above it. Electrons are confined in the strain pockets in the Si cap, which leads to an enhanced wave function overlap with the heavy holes near the upper QD's apex. With a thickness of the Si spacer between the stacked QDs below 5 nm, we separated the functions of the two QDs: The role of the lower one is that of a pure stressor, whereas only the upper QD facilitates radiative recombination of QD-bound excitons. We report on the design and strain engineering of the QD pairs via strain-dependent Schrödinger-Poisson simulations, their implementation by molecular beam epitaxy, and a comprehensive study of their structural and optical properties in comparison with those of single-layer SiGe QD arrays. We find that the double QD arrangement shifts the thermal quenching of the photoluminescence signal at higher temperatures. Moreover, detrimental light emission from the QD-related wetting layers is suppressed in the double-QD configuration.

cond-mat.mes-hall↗

arXiv2018

Semiconductor quantum dots as an ideal source of polarization entangled photon pairs on-demand: a review

More than 80 years passed since the first publication on entangled quantum states. In this period of time the concept of spookily interacting quantum states became an emerging field of science. After various experiments proving the existence of such non-classical states, visionary ideas were put forward to exploit entanglement in quantum information science and technology. These novel concepts have not yet come out of the experimental stage, mostly because of the lack of suitable, deterministic sources of entangled quantum states. Among many systems under investigation, semiconductor quantum dots are particularly appealing emitters of on-demand, single polarization-entangled photon-pairs. Although, it was originally believed that quantum dots must exhibit a limited degree of entanglement related to numerous decoherence effects present in the solid-state. Recent studies invalidated the premise of unavoidable entanglement degrading effects. We review the relevant experiments which have led to these important discoveries and discuss the remaining challenges for the anticipated quantum technologies.

quant-ph↗

arXiv2018

Effect of second order piezoelectricity on excitonic structure of stress-tuned InGaAs/GaAs quantum dots

We study the effects of the nonlinear piezoelectricity and the In distribution on the exciton energy, the electron-hole electric dipole moment, and the fine-structure splitting in stress-tunable InGaAs/GaAs quantum dots integrated onto a piezoelectric actuator. In particular, we investigate in detail the contributions of various elements of the expansion of the electrical polarization in terms of externally induced elastic strain on the latter two important quantum dot properties. Based on the comparison of the effects of first- and second-order piezoelectricity we provide a simple relation to estimate the influence of applied anisotropic stress on the quantum dot dipole moment for quantum dots significantly lattice mismatched to the host crystal.

cond-mat.mes-hall↗

arXiv2017

Strain-Tuning of the Optical Properties of Semiconductor Nanomaterials by Integration onto Piezoelectric Actuators

The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to the realization of advanced multi-functional devices. A prominent approach consists in the integration of active nanomaterials, in thin epitaxial films or embedded within carrier nanomembranes, onto Pb(Mg1/3Nb2/3)O3-PbTiO3-based piezoelectric actuators, which convert electrical signals into mechanical deformation (strain). In this review, we mainly focus on recent advances in strain-tunable properties of self-assembled InAs quantum dots embedded in semiconductor nanomembranes and photonic structures. Additionally, recent works on other nanomaterials like rare-earth and metal-ion doped thin films, graphene and MoS2 or WSe2 semiconductor two-dimensional materials are also reviewed. For the sake of completeness, a comprehensive comparison between different procedures employed throughout the literature to fabricate such hybrid piezoelectric-semiconductor devices is presented. Very recently, a novel class of micro-machined piezoelectric actuators have been demonstrated for a full control of in-plane stress fields in nanomembranes, which enables producing energy-tunable sources of polarization-entangled photons in arbitrary quantum dots. Future research directions and prospects are discussed.

cond-mat.mes-hall↗

arXiv2017

Inversion of the exciton built-in dipole moment in In(Ga)As quantum dots via nonlinear piezoelectric effect

We show that anisotropic biaxial stress can be used to tune the built-in dipole moment of excitons confined in In(Ga)As quantum dots up to complete erasure of its magnitude and inversion of its sign. We demonstrate that this phenomenon is due to piezoelectricity. We present a model to calculate the applied stress, taking advantage of the so-called piezotronic effect, which produces significant changes in the current-voltage characteristics of the strained diode-membranes containing the quantum dots. Finally, self-consistent k.p calculations reveal that the experimental findings can be only accounted for by the nonlinear piezoelectric effect, whose importance in quantum dot physics has been theoretically recognized although it has proven difficult to single out experimentally.

cond-mat.mes-hall↗