arXiv subjects

Johannes Zechner

Publications and source records attributed to Johannes Zechner.

4 recordsLinked to original sources

arXiv2026

A correlation of structural changes with nanomechanical properties in TiN-AlN multilayer films

The present work investigates the changes in overall nanomechanical properties of reactively sputtered TiN-AlN multilayer films arising due to phase transformation in the AlN layers. Multilayered TiN-AlN films were sputter deposited with constant TiN layer thickness of 5 nm while the AlN layer thickness varied between 1-5 nm. The AlN underwent a phase transition from cubic rock salt to hexagonal wurtzite above 3 nm thickness due to the lattice strains. The hardness and indentation modulus of the multilayers decreased with increasing AlN film thickness, up to 3 nm, due to increased volume fraction of softer AlN layer and then stabilized for 4 nm and 5 nm thickness films. Micropillar compression of these multilayers showed a transition from columnar brittle to partially ductile failure associated with crack deflection with increasing AlN film thickness. Interestingly, nanoindentation scratch resistance of 3 nm AlN multilayer was observed to be superior compared to all other films. The crack propagation behavior in scratching showed increased microcracking tendency towards higher AlN film thickness. This shows that cubic to hexagonal transformation in AlN is beneficial for improving the damage tolerance of the multilayer system.

cond-mat.mtrl-sci↗

arXiv2023

Capturing the dynamics of Ti diffusion across Ti$_x$W$_{1-x}$/Cu heterostructures using X-ray photoelectron spectroscopy

Interdiffusion phenomena between adjacent materials are highly prevalent in semiconductor device architectures and can present a major reliability challenge for the industry. To fully capture and better understand these phenomena, experimental approaches must go beyond static and post-mortem studies to include in-situ and in-operando setups. Here, soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) is used to monitor diffusion in real-time across a proxy device. The device consists of a Si/SiO\textsubscript{2}/Ti$_x$W$_{1-x}$(300 nm)/Cu(25 nm) thin film material stack, with the Ti$_x$W$_{1-x}$ film acting as a diffusion barrier between Si and Cu. The monitoring of diffusion is achieved through the continuous collection of spectra whilst in-situ annealing to 673 K. Ti within the TiW is found to be highly mobile during annealing, diffusing out of the barrier and accumulating at the Cu surface. Increasing the Ti concentration within the Ti$_x$W$_{1-x}$ film increases the quantity of accumulated Ti, and Ti is first detected at the Cu surface at temperatures as low as 550 K. Surprisingly, at low Ti concentrations ($x$ = 0.054), W is also mobile and diffuses alongside Ti. These results provide crucial evidence for the importance of diffusion barrier composition on their efficacy during device application, delivering insights into the mechanisms underlying their effectiveness and limitations.

cond-mat.mtrl-sci↗

arXiv2022

Evaluation of the Thermal Stability of TiW/Cu Heterojunctions Using a Combined SXPS and HAXPES Approach

Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress, or at best prevent the interdiffusion between the copper metallisation interconnects and the surrounding silicon substructure. The binary pseudo-alloy of titanium-tungsten (TiW), with $>$70~at.\% W, is a well established copper diffusion barrier but is prone to degradation via the out-diffusion of titanium when exposed to high temperatures ($\geq$400$^\circ$C). Here, the thermal stability of physical vapour deposited (PVD) TiW/Cu bilayer thin films in Si/SiO\textsubscript{2}(50~nm)/TiW(300~nm)/Cu(25~nm) stacks were characterised in response to annealing at 400$^\circ$C for 0.5~h and 5~h, using a combination of soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) and transmission electron microscopy (TEM). Results show that annealing promoted the segregation of titanium out of the TiW and interdiffusion into the copper metallisation. Titanium was shown be driven toward the free copper surface, accumulating there and forming a titanium oxide overlayer upon exposure to air. Annealing for longer timescales promoted a greater out-diffusion of titanium and a thicker oxide layer to grow on the copper surface. However, interface measurements suggest that the diffusion is not significant enough to compromise the barrier integrity and the TiW/Cu interface remains stable even after 5~h of annealing.

cond-mat.mtrl-sci↗

arXiv2021

Thermal and Oxidation Stability of Ti$_x$W$_{1-x}$ Diffusion Barriers Investigated by Soft and Hard X-ray Photoelectron Spectroscopy

The binary alloy of titanium-tungsten (TiW) is an established diffusion barrier in high-power semiconductor devices, owing to its ability to suppress the diffusion of copper from the metallisation scheme into the surrounding silicon substructure. However, little is known about the response of TiW to high temperature events or its behaviour when exposed to air. Here, a combined soft and hard X-ray photoelectron spectroscopy (XPS) characterisation approach is used to study the influence of post-deposition annealing and titanium concentration on the oxidation behaviour of a 300~nm-thick TiW film. The combination of both XPS techniques allows for the assessment of the chemical state and elemental composition across the surface and bulk of the TiW layer. The findings show that in response to high-temperature annealing, titanium segregates out of the mixed metal system and upwardly migrates, accumulating at the TiW/air interface. Titanium shows remarkably rapid diffusion under relatively short annealing timescales and the extent of titanium surface enrichment is increased through longer annealing periods or by increasing the precursor titanium concentration. Surface titanium enrichment enhances the extent of oxidation both at the surface and in the bulk of the alloy due to the strong gettering ability of titanium. Quantification of the soft X-ray photoelectron spectra highlights the formation of three tungsten oxidation environments, attributed to WO$_2$, WO$_3$ and a WO$_3$ oxide coordinated with a titanium environment. This combinatorial characterisation approach provides valuable insights into the thermal and oxidation stability of TiW alloys from two depth perspectives, aiding the development of future device technologies.

cond-mat.mtrl-sci↗