arXiv subjects

John Birkbeck

Publications and source records attributed to John Birkbeck.

12 recordsLinked to original sources

arXiv2024

Multiphase superconductivity in PdBi2

Unconventional superconductivity, where electron pairing does not involve electron-phonon interactions, is often attributed to magnetic correlations in a material. Well known examples include high-T_c cuprates and uranium-based heavy fermion superconductors. Less explored are unconventional superconductors with strong spin-orbit coupling, where interactions between spin-polarised electrons and external magnetic field can result in multiple superconducting phases and field-induced transitions between them, a rare phenomenon in the superconducting state. Here we report a magnetic-field driven phase transition in \beta-PdBi2, a layered non-magnetic superconductor. Our tunnelling spectroscopy on thin PdBi2 monocrystals incorporated in planar superconductor-insulator-normal metal junctions reveals a marked discontinuity in the superconducting properties with increasing in-plane field, which is consistent with a transition from conventional (s-wave) to nodal pairing. Our theoretical analysis suggests that this phase transition may arise from spin polarisation and spin-momentum locking caused by locally broken inversion symmetry, with p-wave pairing becoming energetically favourable in high fields. Our findings also reconcile earlier predictions of unconventional multigap superconductivity in \beta-PdBi2 with previous experiments where only a single s-wave gap could be detected.

cond-mat.supr-con↗

arXiv2024

Imaging the Sub-Moir\'e Potential Landscape using an Atomic Single Electron Transistor

Electrons in solids owe their properties to the periodic potential landscapes they experience. The advent of moir\'e lattices has revolutionized our ability to engineer such landscapes on nanometer scales, leading to numerous groundbreaking discoveries. Despite this progress, direct imaging of these electrostatic potential landscapes remains elusive. In this work, we introduce the Atomic Single Electron Transistor (SET), a novel scanning probe utilizing a single atomic defect in a van der Waals (vdW) material, which serves as an ultrasensitive, high-resolution potential imaging sensor. Built upon the quantum twisting microscope (QTM) platform, this probe leverages the QTM's distinctive capability to form a pristine, scannable 2D interface between vdW heterostructures. Using the Atomic SET, we present the first direct images of the electrostatic potential in one of the most canonical moir\'e interfaces: graphene aligned to hexagonal boron nitride. Our results reveal that this potential exhibits an approximate C6 symmetry, has minimal dependence on the carrier density, and has a substantial magnitude of ~60 mV even in the absence of carriers. Theoretically, the observed symmetry can only be explained by a delicate interplay of physical mechanisms with competing symmetries. Intriguingly, the magnitude of the measured potential significantly exceeds theoretical predictions, suggesting that current understanding may be incomplete. With a spatial resolution of 1 nm and a sensitivity to detect the potential of even a few millionths of an electron charge, the Atomic SET opens the door for ultrasensitive imaging of charge order and thermodynamic properties for a range of quantum phenomena, including various symmetry-broken phases, quantum crystals, vortex charges, and fractionalized quasiparticles.

cond-mat.mes-hall↗

arXiv2024

CHIRPs: Change-Induced Regret Proxy metrics for Lifelong Reinforcement Learning

Reinforcement learning (RL) agents are costly to train and fragile to environmental changes. They often perform poorly when there are many changing tasks, prohibiting their widespread deployment in the real world. Many Lifelong RL agent designs have been proposed to mitigate issues such as catastrophic forgetting or demonstrate positive characteristics like forward transfer when change occurs. However, no prior work has established whether the impact on agent performance can be predicted from the change itself. Understanding this relationship will help agents proactively mitigate a change's impact for improved learning performance. We propose Change-Induced Regret Proxy (CHIRP) metrics to link change to agent performance drops and use two environments to demonstrate a CHIRP's utility in lifelong learning. A simple CHIRP-based agent achieved $48\%$ higher performance than the next best method in one benchmark and attained the best success rates in 8 of 10 tasks in a second benchmark which proved difficult for existing lifelong RL agents.

cs.LG↗

arXiv2024

Measuring Phonon Dispersion and Electron-Phason Coupling in Twisted Bilayer Graphene with a Cryogenic Quantum Twisting Microscope

The coupling between electrons and phonons is one of the fundamental interactions in solids, underpinning a wide range of phenomena such as resistivity, heat conductivity, and superconductivity. However, direct measurements of this coupling for individual phonon modes remains a significant challenge. In this work, we introduce a novel technique for mapping phonon dispersions and electron phonon coupling (EPC) in van der Waals materials. By generalizing the quantum twisting microscope to cryogenic temperatures, we demonstrate its capability to map not only electronic dispersions via elastic momentum-conserving tunnelling, but also phononic dispersions through inelastic momentum-conserving tunnelling. Crucially, the inelastic tunnelling strength provides a direct and quantitative measure of the momentum and mode resolved EPC. We use this technique to measure the phonon spectrum and EPC of twisted bilayer graphene (TBG). Surprisingly, we find that unlike standard acoustic phonons, whose coupling to electrons diminishes as their momentum goes to zero, TBG exhibits a low energy mode whose coupling increases with decreasing twist angle. We show that this unusual coupling arises from the modulation of the inter-layer tunnelling by a layer-antisymmetric 'phason' mode of the moir\'e system. The technique demonstrated here opens the way for probing a large variety of other neutral collective modes that couple to electronic tunnelling, including plasmons, magnons and spinons in quantum materials.

cond-mat.mes-hall↗

arXiv2022

Spread and erase -- How electron hydrodynamics can eliminate the Landauer-Sharvin resistance

It has long been realized that even a perfectly clean electronic system harbors a Landauer-Sharvin resistance, inversely proportional to the number of its conduction channels. This resistance is usually associated with voltage drops on the system's contacts to an external circuit. Recent theories have shown that hydrodynamic effects can reduce this resistance, raising the question of the lower bound of resistance of hydrodynamic electrons. Here we show that by a proper choice of device geometry, it is possible to spread the Landauer-Sharvin resistance throughout the bulk of the system, allowing its complete elimination by electron hydrodynamics. We trace the effect to the dynamics of electrons flowing in channels that terminate within the sample. For ballistic systems this termination leads to back-reflection of the electrons and creates resistance. Hydrodynamically, the scattering of these electrons off other electrons allows them to transfer to transmitted channels and avoid the resistance. Counter-intuitively, we find that in contrast to the ohmic regime, for hydrodynamic electrons the resistance of a device with a given width can decrease with its length, suggesting that a long enough device may have an arbitrarily small total resistance.

cond-mat.mes-hall↗

arXiv2022

The Quantum Twisting Microscope

The invention of scanning probe microscopy has revolutionized the way electronic phenomena are visualized. While present-day probes can access a variety of electronic properties at a single location in space, a scanning microscope that can directly probe the quantum mechanical existence of an electron at multiple locations would provide direct access to key quantum properties of electronic systems, so far unreachable. Here, we demonstrate a conceptually new type of scanning probe microscope - the Quantum Twisting Microscope (QTM) - capable of performing local interference experiments at its tip. The QTM is based on a unique van-der-Waals tip, allowing the creation of pristine 2D junctions, which provide a multitude of coherently-interfering paths for an electron to tunnel into a sample. With the addition of a continuously scanned twist angle between the tip and sample, this microscope probes electrons in momentum space similar to the way a scanning tunneling microscope probes electrons in real space. Through a series of experiments, we demonstrate room temperature quantum coherence at the tip, study the twist angle evolution of twisted bilayer graphene, directly image the energy bands of monolayer and twisted bilayer graphene, and finally, apply large local pressures while visualizing the evolution of the flat energy bands of the latter. The QTM opens the way for novel classes of experiments on quantum materials.

cond-mat.mes-hall↗

arXiv2021

Imaging Hydrodynamic Electrons Flowing Without Landauer-Sharvin Resistance

Electrical resistance usually originates from lattice imperfections. However, even a perfect lattice has a fundamental resistance limit, given by the Landauer conductance caused by a finite number of propagating electron modes. This resistance, shown by Sharvin to appear at the contacts of electronic devices, sets the ultimate conductance limit of non-interacting electrons. Recent years have seen growing evidence of hydrodynamic electronic phenomena, prompting recent theories to ask whether an electronic fluid can radically break the fundamental Landauer-Sharvin limit. Here, we use single-electron transistor imaging of electronic flow in high-mobility graphene Corbino disk devices to answer this question. First, by imaging ballistic flows at liquid-helium temperatures, we observe a Landauer-Sharvin resistance that does not appear at the contacts but is instead distributed throughout the bulk. This underpins the phase-space origin of this resistance - as emerging from spatial gradients in the number of conduction modes. At elevated temperatures, by identifying and accounting for electron-phonon scattering, we reveal the details of the purely hydrodynamic flow. Strikingly, we find that electron hydrodynamics eliminates the bulk Landuer-Sharvin resistance. Finally, by imaging spiraling magneto-hydrodynamic Corbino flows, we reveal the key emergent length scale predicted by hydrodynamic theories - the Gurzhi length. These observations demonstrate that electronic fluids can dramatically transcend the fundamental limitations of ballistic electrons, with important implications for fundamental science and future technologies

cond-mat.mes-hall↗

arXiv2019

Imaging work and dissipation in the quantum Hall state in graphene

Topology is a powerful recent concept asserting that quantum states could be globally protected against local perturbations. Dissipationless topologically protected states are thus of major fundamental interest as well as of practical importance in metrology and quantum information technology. Although topological protection can be robust theoretically, in realistic devices it is often fragile against various dissipative mechanisms, which are difficult to probe directly because of their microscopic origins. By utilizing scanning nanothermometry, we visualize and investigate microscopic mechanisms undermining the apparent topological protection in the quantum Hall state in graphene. Our simultaneous nanoscale thermal and scanning gate microscopy shows that the dissipation is governed by crosstalk between counterpropagating pairs of downstream and upstream channels that appear at graphene boundaries because of edge reconstruction. Instead of local Joule heating, however, the dissipation mechanism comprises two distinct and spatially separated processes. The work generating process that we image directly and which involves elastic tunneling of charge carriers between the quantum channels, determines the transport properties but does not generate local heat. The independently visualized heat and entropy generation process, in contrast, occurs nonlocally upon inelastic resonant scattering off single atomic defects at graphene edges, while not affecting the transport. Our findings offer a crucial insight into the mechanisms concealing the true topological protection and suggest venues for engineering more robust quantum states for device applications.

cond-mat.mes-hall↗

arXiv2019

Visualizing Poiseuille flow of hydrodynamic electrons

Hydrodynamics is a general description for the flow of a fluid, and is expected to hold even for fundamental particles such as electrons when inter-particle interactions dominate. While various aspects of electron hydrodynamics were revealed in recent experiments, the fundamental spatial structure of hydrodynamic electrons, the Poiseuille flow profile, has remained elusive. In this work, we provide the first real-space imaging of Poiseuille flow of an electronic fluid, as well as visualization of its evolution from ballistic flow. Utilizing a scanning nanotube single electron transistor, we image the Hall voltage of electronic flow through channels of high-mobility graphene. We find that the profile of the Hall field across the channel is a key physical quantity for distinguishing ballistic from hydrodynamic flow. We image the transition from flat, ballistic field profiles at low temperature into parabolic field profiles at elevated temperatures, which is the hallmark of Poiseuille flow. The curvature of the imaged profiles is qualitatively reproduced by Boltzmann calculations, which allow us to create a 'phase diagram' that characterizes the electron flow regimes. Our results provide long-sought, direct confirmation of Poiseuille flow in the solid state, and enable a new approach for exploring the rich physics of interacting electrons in real space.

cond-mat.mes-hall↗

arXiv2018

Simultaneous imaging of voltage and current density of flowing electrons in two dimensions

Electron transport in nanoscale devices can often result in nontrivial spatial patterns of voltage and current that reflect a variety of physical phenomena, particularly in nonlocal transport regimes. While numerous techniques have been devised to image electron flows, the need remains for a nanoscale probe capable of simultaneously imaging current and voltage distributions with high sensitivity and minimal invasiveness, in magnetic field, across a broad range of temperatures, and beneath an insulating surface. Here we present such a technique for spatially mapping electron flows based on a nanotube single-electron transistor, which achieves high sensitivity for both voltage and current imaging. In a series of experiments using high-mobility graphene devices, we demonstrate the ability of our technique to visualize local aspects of intrinsically nonlocal transport, as in ballistic flows, which are not easily resolvable via existing methods. This technique should both aid in understanding the physics of two-dimensional electronic devices, as well as enable new classes of experiments that image electron flow through buried nanostructures in the quantum and interaction-dominated regimes.

cond-mat.mes-hall↗

arXiv2018

Unusual suppression of the superconducting energy gap and critical temperature in atomically thin NbSe2

It is well known that superconductivity in thin films is generally suppressed with decreasing thickness. This suppression is normally governed by either disorder-induced localization of Cooper pairs, weakening of Coulomb screening, or generation and unbinding of vortex-antivortex pairs as described by the Berezinskii-Kosterlitz-Thouless (BKT) theory. Defying general expectations, few-layer NbSe2 - an archetypal example of ultrathin superconductors - has been found to remain superconducting down to monolayer thickness. Here we report measurements of both the superconducting energy gap and critical temperature in high-quality monocrystals of few-layer NbSe2, using planar-junction tunneling spectroscopy and lateral transport. We observe a fully developed gap that rapidly reduces for devices with the number of layers N < 5, as does their ctitical temperature. We show that the observed reduction cannot be explained by disorder, and the BKT mechanism is also excluded by measuring its transition temperature that for all N remains very close to Tc. We attribute the observed behavior to changes in the electronic band structure predicted for mono- and bi- layer NbSe2 combined with inevitable suppression of the Cooper pair density at the superconductor-vacuum interface. Our experimental results for N > 2 are in good agreement with the dependences of the gap and Tc expected in the latter case while the effect of band-structure reconstruction is evidenced by a stronger suppression of the gap and the disappearance of its anisotropy for N = 2. The spatial scale involved in the surface suppression of the density of states is only a few angstroms but cannot be ignored for atomically thin superconductors.

cond-mat.supr-con↗

arXiv2017

Imaging resonant dissipation from individual atomic defects in graphene

Conversion of electric current into heat involves microscopic processes that operate on nanometer length-scales and release minute amounts of power. While central to our understanding of the electrical properties of materials, individual mediators of energy dissipation have so far eluded direct observation. Using scanning nano-thermometry with sub-micro K sensitivity we visualize and control phonon emission from individual atomic defects in graphene. The inferred electron-phonon 'cooling power spectrum' exhibits sharp peaks when the Fermi level comes into resonance with electronic quasi-bound states at such defects, a hitherto uncharted process. Rare in the bulk but abundant at graphene's edges, switchable atomic-scale phonon emitters define the dominant dissipation mechanism. Our work offers new insights for addressing key materials challenges in modern electronics and engineering dissipation at the nanoscale.

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