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John E. Bowers

Publications and source records attributed to John E. Bowers.

At least 37 records · Page 2Linked to original sources
arXiv2024

Turnkey locking of quantum-dot lasers directly grown on Si

Ultra-low-noise laser sources are crucial for a variety of applications, including microwave synthesizers, optical gyroscopes, and the manipulation of quantum systems. Silicon photonics has emerged as a promising solution for high-coherence applications due to its ability to reduce system size, weight, power consumption, and cost (SWaP-C). Semiconductor lasers based on self-injection locking (SIL) have reached fiber laser coherence, but typically require a high-Q external cavity to suppress coherence collapse through frequency-selective feedback. Lasers based on external-cavity locking (ECL) are a low-cost and turnkey operation option, but their coherence is generally inferior to SIL lasers. In this work, we demonstrate quantum-dot (QD) lasers grown directly on Si that achieve SIL laser coherence under turnkey ECL. The high-performance QD laser offers a scalable and low-cost heteroepitaxial integration platform. Moreover, the QD laser's chaos-free nature enables a 16 Hz Lorentzian linewidth under ECL using a low-Q external cavity, and improves the frequency noise by an additional order of magnitude compared to conventional quantum-well lasers.

physics.optics↗
arXiv2023

High-coherence parallelization in integrated photonics

Coherent optics has profoundly impacted diverse applications ranging from communications, LiDAR to quantum computations. However, building coherent systems in integrated photonics previously came at great expense in hardware integration and energy efficiency: the lack of a power-efficient way to generate highly coherent light necessitates bulky lasers and amplifiers, while frequency and phase recovery schemes require huge digital signal processing resources. In this work, we demonstrate a high-coherence parallelization strategy that facilitates advanced integrated coherent systems at a minimum price. Using a self-injection locked microcomb to injection lock a distributed feedback laser array, we boost the microcomb power by a record high gain of up to 60 dB on chip with no degradation in coherence. This strategy enables tens of highly coherent channels with an intrinsic linewidth down to the 10 Hz level and power of more than 20 dBm. The overall electrical to optical wall-plug efficiency reaches 19%, comparable with that of the state-of-the-art semiconductor lasers. Driven by this parallel source, we demonstrate a silicon photonic communication link with an unprecedented data rate beyond 60 Tbit/s. Importantly, the high coherence we achieve reduces the coherent-related DSP consumption by 99.999% compared with the traditional III-V laser pump scheme. This work paves a way to realizing scalable, high-performance coherent integrated photonic systems, potentially benefiting numerous applications.

physics.optics↗
arXiv2023

Continuous Entanglement Distribution from an AlGaAs-on-Insulator Microcomb for Quantum Communications

Using an aluminum gallium arsenide microring resonator, we demonstrate a bright quantum optical microcomb with $>300$ nm bandwidth and more than 20 sets of time-energy entangled modes, enabling spectral demultiplexing with simple, off-the-shelf commercial telecom components. We report high-rate continuous entanglement distribution for two sets of entangled-photon pair frequency modes exhibiting up to $20$ GHz/mW$^2$ pair generation rate. As an illustrative example of entanglement distribution, we perform a continuous-wave time-bin quantum key distribution protocol with 8 kbps raw key rates while maintaining less than 10$\%$ error rate and sufficient two-photon visibility to ensure security of the channel. When the $>$20 frequency modes are multiplexed, we estimate $>$100 kbps entanglement-based key rates or the creation of a multi-user quantum communications network. The entire system requires less than 110 $μ$W of on-chip optical power, demonstrating an efficient source of entangled frequency modes for quantum communications. As a proof of principle, a quantum key is distributed across 12 km of deployed fiber on the UCSB campus and used to transmit a 21 kB image with $<9\%$ error.

quant-ph↗
arXiv2023

Subspace tracking for independent phase noise source separation in frequency combs

Advanced digital signal processing techniques in combination with ultra-wideband balanced coherent detection have enabled a new generation of ultra-high speed fiber-optic communication systems, by moving most of the processing functionalities into digital domain. In this paper, we demonstrate how digital signal processing techniques, in combination with ultra-wideband balanced coherent detection can enable optical frequency comb noise characterization techniques with novel functionalities. We propose a measurement method based on subspace tracking, in combination with multi-heterodyne coherent detection, for independent phase noise sources identification, separation and measurement. Our proposed measurement technique offers several benefits. First, it enables the separation of the total phase noise associated with a particular comb-line or -lines into multiple independent phase noise terms associated with different noise sources. Second, it facilitates the determination of the scaling of each independent phase noise term with comb-line number. Our measurement technique can be used to: identify the most dominant source of phase noise; gain a better understanding of the physics behind the phase noise accumulation process; and confirm, already existing, and enable better phase noise models. In general, our measurement technique provides new insights into noise behavior of optical frequency combs.

physics.optics↗
arXiv2023

Photonic chip-based low noise microwave oscillator

Numerous modern technologies are reliant on the low-phase noise and exquisite timing stability of microwave signals. Substantial progress has been made in the field of microwave photonics, whereby low noise microwave signals are generated by the down-conversion of ultra-stable optical references using a frequency comb. Such systems, however, are constructed with bulk or fiber optics and are difficult to further reduce in size and power consumption. Our work addresses this challenge by leveraging advances in integrated photonics to demonstrate low-noise microwave generation via two-point optical frequency division. Narrow linewidth self-injection locked integrated lasers are stabilized to a miniature Fabry-Pérot cavity, and the frequency gap between the lasers is divided with an efficient dark-soliton frequency comb. The stabilized output of the microcomb is photodetected to produce a microwave signal at 20 GHz with phase noise of -96 dBc/Hz at 100 Hz offset frequency that decreases to -135 dBc/Hz at 10 kHz offset--values which are unprecedented for an integrated photonic system. All photonic components can be heterogeneously integrated on a single chip, providing a significant advance for the application of photonics to high-precision navigation, communication and timing systems.

physics.optics↗
arXiv2023

Broadband quantum-dot frequency-modulated comb laser

Frequency-modulated (FM) laser combs, which offer a periodic quasi-continuous-wave output and a flat-topped optical spectrum, are emerging as a promising solution for wavelength-division multiplexing applications, precision metrology, and ultrafast optical ranging. The generation of FM combs relies on spatial hole burning, group velocity dispersion (GVD), Kerr nonlinearity, and four-wave mixing (FWM). While FM combs have been widely observed in quantum cascade Fabry-Perot (FP) lasers, the requirement for a low-dispersion FP cavity can be a challenge in platforms where the waveguide dispersion is mainly determined by the material. Here we report a 60 GHz quantum-dot (QD) mode-locked laser in which both the amplitude-modulated (AM) and the FM comb can be generated independently. The high FWM efficiency of -5 dB allows the QD laser to generate an FM comb efficiently. We also demonstrate that the Kerr nonlinearity can be practically engineered to improve the FM comb bandwidth without the need for GVD engineering. The maximum 3-dB bandwidth that our QD platform can deliver is as large as 2.2 THz. This study gives novel insights into the improvement of FM combs and paves the way for small-footprint, electrically-pumped, and energy-efficient frequency combs for silicon photonic integrated circuits (PICs).

physics.optics↗
arXiv2023

High-coherence hybrid-integrated 780 nm source by self-injection-locked second-harmonic generation in a high-Q silicon-nitride resonator

By self-injection-locking a 1560 nm distributed feedback semiconductor laser to a high-$Q$ silicon nitride resonator, a high-coherence 780 nm second harmonic signal is generated via the photogalvanic-induced second-order nonlinearity. A record-low frequency noise floor of 4 Hz$^2$/Hz is achieved for the 780 nm emission. The approach can be generalized for signal generation over a wide range of visible and near-visible bands.

physics.optics↗
arXiv2023

Observation of Floquet Chern insulators of light

The field of topological photonics studies unique and robust photonic systems that are immune to defects and disorders due to the protection of their underlying topological phases. Mostly implemented in static systems, the studied topological phases are often defined in linear photonic band structures. In this study, we experimentally demonstrate Floquet Chern insulators in periodically driven nonlinear photonic crystals, where the topological phase is controlled by the polarization and the frequency of the driving field. Mediated by strong material nonlinearity, our system enters what we call the 'strong Floquet coupling regime', where the photonic Floquet bands cross and open new energy gaps with non-trivial topology as observed in our transient sum-frequency generation measurements. Our work offers new opportunities to explore the role of classical optical nonlinearity in topological phases and their applications in nonlinear optoelectronics.

physics.optics↗
arXiv2023

Three-dimensional integration enables ultra-low-noise, isolator-free Si photonics

While photonic integrated circuits (PICs) are being widely used in applications such as telecommunications and datacenter interconnects, PICs capable of replacing bulk optics and fibers in high-precision, highly-coherent applications will require ultra-low-noise laser sources to be integrated with other photonic components in a compact and robustly aligned format -- that is, on a single chip. Such PICs could offer superior scalability for complex functionalities and volume production, as well as improved stability and reliability over time. However, there are two major issues preventing the realization of such envisioned PICs: the high phase noise of semiconductor lasers, and the difficulty of integrating optical isolators directly on chip. PICs are still considered as inferior solutions in optical systems such as microwave synthesizers, optical gyroscopes and atomic clocks, despite their advantages in size, weight, power consumption and cost (SWaPC). Here, we challenge this convention by introducing three-dimensional (3D) integration in silicon photonics that results in ultra-low-noise, isolator-free PICs. Through multiple monolithic and heterogeneous processing sequences, direct on-chip integration of III-V gain and ultra-low-loss (ULL) silicon nitride (SiN) waveguides with optical loss around 0.5 dB/m are demonstrated. Consequently, the demonstrated PIC enters a new regime, such that an integrated ultra-high-Q cavity reduces the laser noise close to that of fiber lasers. Moreover, the cavity acts as an effective block for any downstream on-chip or off-chip reflection-induced destabilization, thus eliminating the need for optical isolators. We further showcase isolator-free, widely-tunable, low-noise, heterodyne microwave generation using two ultra-low-noise lasers on the same silicon chip.

physics.app-ph↗
arXiv2023

Dislocation-induced structural and luminescence degradation in InAs quantum dot emitters on silicon

We probe the extent to which dislocations reduce carrier lifetimes and alter luminescence and growth morphology in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable monolithically integrated light source on silicon necessary for photonic integrated circuits. We find up to 20-30% shorter carrier lifetimes at spatially resolved individual dislocations from both the QD ground and excited states at room temperature using time-resolved cathodoluminescence spectroscopy. These lifetimes are consistent with differences in the intensity measured under steady-state excitation suggesting that trap-assisted recombination limits the minority carrier lifetime, even away from dislocations. Our techniques also reveal the dramatic growth of misfit dislocations in these structures under carrier injection fueled by recombination-enhanced dislocation glide and III-V/Si residual strain. Beyond these direct effects of increased nonradiative recombination, we find the long-range strain field of misfit dislocations deeper in the defect filter layers employed during III-V/Si growth alter the QD growth environment and introduce a crosshatch-like variation in the QD emission color and intensity when the filter layer is positioned close to the QD emitter layer. Sessile threading dislocations generate even more egregious hillock defects that also reduce emission intensities by altering layer thicknesses, as measured by transmission electron microscopy and atom probe tomography. Our work presents a more complete picture of the impacts of dislocations relevant for the development of light sources for scalable silicon photonic integrated circuits.

cond-mat.mes-hall↗
arXiv2022

Soliton generation in AlGaAs microresonators at room temperature

Chip-integrated optical frequency combs are attractive optical sources in comb applications requiring high-repetition-rate, low power consumption, or compact size. Spontaneous soliton formation via Kerr parametric oscillation is a promising generation principle in these frequency combs, and has been demonstrated in several material platforms over the past decade. Of these materials, AlGaAs has one of the largest Kerr nonlinearity coefficients allowing low pump threshold comb generation. However, bright soliton generation using this material has only been possible at cryogenic temperature because of the large thermo-optic effect at room temperature, which hinders stable access to the soliton regime. Here, we report self-stabilized single soliton generation in AlGaAs microresonators at room temperature by utilizing a rising soliton step in large free-spectral-range resonators. With sub-milliWatt optical pump power, 1 THz repetition-rate soliton generation is demonstrated. Perfect soliton crystal formation and soliton breather states are also observed. Besides the advantages of large optical nonlinearity, the devices are natural candidates for integration with III-V pump lasers.

physics.optics↗
arXiv2022

Self-injection-locked second-harmonic integrated source

High coherence visible and near-visible laser sources are centrally important to the operation of advanced position/navigation/timing systems as well as classical/quantum sensing systems. However, the complexity and size of these bench-top lasers is an impediment to their transitioning beyond the laboratory. Here, a system-on-a-chip that emits high-coherence visible and near-visible lightwaves is demonstrated. The devices rely upon a new approach wherein wavelength conversion and coherence increase by self-injection-locking are combined within in a single nonlinear resonator. This simplified approach is demonstrated in a hybridly-integrated device and provides a short-term linewidth around 10-30 kHz. On-chip, converted optical power over 2 mW is also obtained. Moreover, measurements show that heterogeneous integration can result in conversion efficiency higher than 25% with output power over 11 mW. Because the approach uses mature III-V pump lasers in combination with thin-film lithium niobate, it can be scaled for low-cost manufacturing of high-coherence visible emitters. Also, the coherence generation process can be transferred to other frequency conversion processes including optical parametric oscillation, sum/difference frequency generation, and third-harmonic generation.

physics.optics↗
arXiv2022

Ultralow voltage, High-speed, and Energy-efficient Cryogenic Electro-Optic Modulator

Photonic integrated circuits (PICs) at cryogenic temperatures enable a wide range of applications in scalable classical and quantum systems for computing and sensing. A promising application of cryogenic PICs is to provide optical interconnects by up-converting signals from electrical to optical domain, allowing massive data-transfer from 4 K superconducting (SC) electronics to room temperature environment. Such a solution is central to overcome the major bottleneck in the scalability of cryogenic systems, which currently rely on bulky copper cables that suffer from limited bandwidth, large heat load, and do not show any scalability path. A key element for realizing a cryogenic-to-room temperature optical interconnect is a high-speed electro-optic (EO) modulator operating at 4 K with operation voltage at mV scale, compatible with SC electronics. Although several cryogenic EO modulators have been demonstrated, their driving voltages are significantly large compared to the mV scale voltage required for SC circuits. Here, we demonstrate a cryogenic modulator with ~10 mV peak-to-peak driving voltage and gigabits/sec data rate, with ultra-low electric and optical energy consumptions of ~10.4 atto-joules/bit and ~213 femto-joules/bit, respectively. We achieve this record performance by designing a compact optical ring resonator modulator in a heterogeneous InP-on-Silicon platform, where we optimize a multi-quantum well layer of InAIGaAs to achieve a strong EO effect at 4 K. Unlike other semiconductors such as silicon, our platform benefits from the high-carrier mobility and minimal free carrier freezing of III-V compounds at low temperatures, with moderate doping level and low loss (intrinsic resonator Q~272,000). These modulators can pave the path for complex cryogenic photonic functionalities and massive data transmission between cryogenic and room-temperature electronics.

physics.optics↗
arXiv2022

Integrated Passive Nonlinear Optical Isolators

Fiber and bulk-optical isolators are widely used to stabilize laser cavities by preventing unwanted feedback. However, their integrated counterparts have been slow to be adopted. While several strategies for on-chip optical isolation have been realized, these rely on either integration of magneto-optic materials or high frequency modulation with acousto-optic or electro-optic modulators. Here, we demonstrate an integrated approach for passively isolating a continuous wave laser using the intrinsically non-reciprocal Kerr nonlinearity in ring resonators. Using silicon nitride as a model platform, we achieve single ring isolation of 17-23dB with 1.8-5.5dB insertion loss, and a cascaded ring isolation of 35dB with 5dB insertion loss. Employing these devices, we demonstrate hybrid integration and isolation with a semi-conductor laser chip.

physics.optics↗
arXiv2022

Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of III-V devices on Si at elevated temperatures. Yet, thick, defect management epi designs prevent vertical light coupling from the gain region to the Si-on-Insulator (SOI) waveguides. Here, we demonstrate the first electrically pumped QD lasers grown on a 300 mm patterned (001) Si wafer with a butt-coupled configuration by molecular beam epitaxy (MBE). Unique growth and fabrication challenges imposed by the template architecture have been resolved, contributing to continuous wave lasing to 60 °C and a maximum double-side output power of 126.6 mW at 20 °C with a double-side wall plug efficiency of 8.6%. The potential for robust on-chip laser operation and efficient low-loss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production.

physics.optics↗
arXiv2022

Expanding the Quantum Photonic Toolbox in AlGaAsOI

Aluminum gallium arsenide-on-insulator (AlGaAsOI) exhibits large $χ^\left(2\right)$ and $χ^\left(3\right)$ optical nonlinearities, a wide tunable bandgap, low waveguide propagation loss, and a large thermo-optic coefficient, making it an exciting platform for integrated quantum photonics. With ultrabright sources of quantum light established in AlGaAsOI, the next step is to develop the critical building blocks for chip-scale quantum photonic circuits. Here we expand the quantum photonic toolbox for AlGaAsOI by demonstrating edge couplers, 3-dB splitters, tunable interferometers, and waveguide crossings with performance comparable to or exceeding silicon and silicon-nitride quantum photonic platforms. As a demonstration, we demultiplex photonic qubits through an unbalanced interferometer, paving the route toward ultra-efficient and high-rate chip-scale demonstrations of photonic quantum computation and information applications.

physics.optics↗
arXiv2022

Integrated Pockels Laser

The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has harnessed low-loss waveguides in different material systems, leading to significant improvements in laser coherence and stability. Despite these successes, however, key functions remain absent. In this work, we address a critical missing function by integrating the Pockels effect into a semiconductor laser. Using a hybrid integrated III-V/Lithium Niobate structure, we demonstrate several essential capabilities that have not existed in previous integrated lasers. These include a record-high frequency modulation speed of 2 exahertz/s (2.0$\times$10$^{18}$ Hz/s) and fast switching at 50 MHz, both of which are made possible by integration of the electro-optic effect. Moreover, the device co-lases at infrared and visible frequencies via the second-harmonic frequency conversion process, the first such integrated multi-color laser. Combined with its narrow linewidth and wide tunability, this new type of integrated laser holds promise for many applications including LiDAR, microwave photonics, atomic physics, and AR/VR.

physics.optics↗
arXiv2022

Chip-Based Laser with 1 Hertz Integrated Linewidth

Lasers with hertz-level linewidths on timescales up to seconds are critical for precision metrology, timekeeping, and manipulation of quantum systems. Such frequency stability typically relies on bulk-optic lasers and reference cavities, where increased size is leveraged to improve noise performance, but with the trade-off of cost, hand assembly, and limited application environments. On the other hand, planar waveguide lasers and cavities exploit the benefits of CMOS scalability but are fundamentally limited from achieving hertz-level linewidths at longer times by stochastic noise and thermal sensitivity inherent to the waveguide medium. These physical limits have inhibited the development of compact laser systems with frequency noise required for portable optical clocks that have performance well beyond conventional microwave counterparts. In this work, we break this paradigm to demonstrate a compact, high-coherence laser system at 1548 nm with a 1 s integrated linewidth of 1.1 Hz and fractional frequency instability less than 10$^{-14}$ from 1 ms to 1 s. The frequency noise at 1 Hz offset is suppressed by 11 orders of magnitude from that of the free-running diode laser down to the cavity thermal noise limit near 1 Hz$^2$/Hz, decreasing to 10$^{-3}$ Hz$^2$/Hz at 4 kHz offset. This low noise performance leverages wafer-scale integrated lasers together with an 8 mL vacuum-gap cavity that employs micro-fabricated mirrors with sub-angstrom roughness to yield an optical $Q$ of 11.8 billion. Significantly, all the critical components are lithographically defined on planar substrates and hold the potential for parallel high-volume manufacturing. Consequently, this work provides an important advance towards compact lasers with hertz-level linewidths for applications such as portable optical clocks, low-noise RF photonic oscillators, and related communication and navigation systems.

physics.optics↗