arXiv subjects

John J. L. Morton

Publications and source records attributed to John J. L. Morton.

At least 55 records · Page 3Linked to original sources

arXiv2019

Tunable Nb superconducting resonators based upon a Ne-FIB-fabricated constriction nanoSQUID

Hybrid superconducting--spin systems offer the potential to combine highly coherent atomic quantum systems with the scalability of superconducting circuits. To fully exploit this potential requires a high quality-factor microwave resonator, tunable in frequency and able to operate at magnetic fields optimal for the spin system. Such magnetic fields typically rule out conventional Al-based Josephson junction devices that have previously been used for tunable high-$Q$ microwave resonators. The larger critical field of niobium (Nb) allows microwave resonators with large field resilience to be fabricated. Here, we demonstrate how constriction-type weak links, patterned in parallel into the central conductor of a Nb coplanar resonator using a neon focused ion beam (FIB), can be used to implement a frequency-tunable resonator. We study transmission through two such devices and show how they realise high quality factor, tunable, field resilient devices which hold promise for future applications coupling to spin systems.

cond-mat.supr-con↗

arXiv2018

Silicon photonic crystal cavities at near band-edge wavelengths

We demonstrate photonic crystal L3 cavities with resonant wavelength around 1.078 \textmu m on undoped silicon-on-insulator, designed to enhance spontaneous emission from phosphorus donor-bound excitons.\enspace We have optimised a fabrication recipe using readily available process materials such as polymethyl methacrylate (PMMA) as a soft electron-beam mask and a Chemical Vapour Deposition (CVD) grown oxide layer as a hard mask. Our bilayer resist technique efficiently produces photonic crystal cavities with a quality factor ($Q$) of $\sim 5,000$ at a wavelength of $1.078$ \textmu m, measured using cavity reflection measurements at room temperature. We observe a decrease of $Q$ as the cavity resonance shifts to shorter wavelengths ($Q \lesssim3,000$ at wavelengths $< 1.070$ \textmu m), which is mostly due to the intrinsic absorption of silicon.

physics.app-ph↗

arXiv2018

Primary thermometry of a single reservoir using cyclic electron tunneling in a CMOS transistor

Temperature is a fundamental parameter in the study of physical phenomena. At the nanoscale, local temperature differences can be harnessed to design novel thermal nanoelectronic devices or test quantum thermodynamical concepts. Determining temperature locally is hence of particular relevance. Here, we present a primary electron thermometer that allows probing the local temperature of a single electron reservoir in single-electron devices. The thermometer is based on cyclic electron tunneling between a system with discrete energy levels and a single electron reservoir. When driven at a finite rate, close to a charge degeneracy point, the system behaves like a variable capacitor whose magnitude and line-shape varies with temperature. In this experiment, we demonstrate this type of thermometer using a quantum dot in a CMOS nanowire transistor. We drive cyclic electron tunneling by embedding the device in a radio-frequency resonator which in turn allows us to read the thermometer dispersively. We find that the full width at half maximum of the resonator phase response depends linearly with temperature via well known physical law by using the ratio $k_\text{B}/e$ between the Boltzmann constant and the electron charge. Overall, the thermometer shows potential for local probing of fast heat dynamics in nanoelectronic devices and for seamless integration with silicon-based quantum circuits.

cond-mat.mes-hall↗

arXiv2018

Linear hyperfine tuning of donor spins in silicon using hydrostatic strain

We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains $|\varepsilon| < 10^{-5}$. Through both tight-binding and first principles calculations we find that these shifts arise from a linear tuning of the donor hyperfine interaction term by the hydrostatic component of strain and achieve semi-quantitative agreement with the experimental values. Our results provide a framework for making quantitative predictions of donor spins in silicon nanostructures, such as those being used to develop silicon-based quantum processors and memories. The strong spin-strain coupling we measure (up to 150~GHz per strain, for Bi-donors in Si), offers a method for donor spin tuning --- shifting Bi donor electron spins by over a linewidth with a hydrostatic strain of order $10^{-6}$ --- as well as opportunities for coupling to mechanical resonators.

quant-ph↗

arXiv2018

Radio-frequency capacitive gate-based sensing

Developing fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is configured in parallel with a superconducting spiral inductor resulting in resonators with loaded Q-factors in the 400-800 range. For a resonator operating at 330 MHz, we achieve a charge sensitivity of 7.7 $μ$e$/\sqrt{\text{Hz}}$ and, when operating at 616 MHz, we get 1.3 $μ$e$/\sqrt{\text{Hz}}$. We perform a parametric study of the resonator to reveal its optimal operation points and perform a circuit analysis to determine the best resonator design. The results place gate-based sensing at par with the best reported radio-frequency single-electron transistor sensitivities while providing a fast and compact method for quantum state readout.

physics.app-ph↗

arXiv2017

A silicon-based single-electron interferometer coupled to a fermionic sea

We study Landau-Zener-Stueckelberg-Majorana (LZSM) interferometry under the influence of projective readout using a charge qubit tunnel-coupled to a fermionic sea. This allows us to characterise the coherent charge qubit dynamics in the strong-driving regime. The device is realised within a silicon complementary metal-oxide-semiconductor (CMOS) transistor. We first read out the charge state of the system in a continuous non-demolition manner by measuring the dispersive response of a high-frequency electrical resonator coupled to the quantum system via the gate. By performing multiple fast passages around the qubit avoided crossing, we observe a multi-passage LZSM interferometry pattern. At larger driving amplitudes, a projective measurement to an even-parity charge state is realised, showing a strong enhancement of the dispersive readout signal. At even larger driving amplitudes, two projective measurements are realised within the coherent evolution resulting in the disappearance of the interference pattern. Our results demonstrate a way to increase the state readout signal of coherent quantum systems and replicate single-electron analogues of optical interferometry within a CMOS transistor.

cond-mat.mes-hall↗

arXiv2015

A silicon-based surface code quantum computer

Individual impurity atoms in silicon can make superb individual qubits, but it remains an immense challenge to build a multi-qubit processor: There is a basic conflict between nanometre separation desired for qubit-qubit interactions, and the much larger scales that would enable control and addressing in a manufacturable and fault tolerant architecture. Here we resolve this conflict by establishing the feasibility of surface code quantum computing using solid state spins, or `data qubits', that are widely separated from one another. We employ a second set of `probe' spins which are mechanically separate from the data qubits and move in-and-out of their proximity. The spin dipole-dipole interactions give rise to phase shifts; measuring a probe's total phase reveals the collective parity of the data qubits along the probe's path. We introduce a protocol to balance the systematic errors due to the spins being imperfectly located during device fabrication. Detailed simulations show that the surface code's threshold then corresponds to misalignments that are substantial on the scale of the array, indicating that it is very robust. We conclude that this simple `orbital probe' architecture overcomes many of the difficulties facing solid state quantum computing, while minimising the complexity and offering qubit densities that are several orders of magnitude greater than other systems.

quant-ph↗

arXiv2015

Nuclear spin decoherence of neutral $^{31}$P donors in silicon: Effect of environmental $^{29}$Si nuclei

Spectral diffusion arising from $^{29}$Si nuclear spin flip-flops, known to be a primary source of electron spin decoherence in silicon, is also predicted to limit the coherence times of neutral donor nuclear spins in silicon. Here, the impact of this mechanism on $^{31}$P nuclear spin coherence is measured as a function of $^{29}$Si concentration using X-band pulsed electron nuclear double resonance (ENDOR). The $^{31}$P nuclear spin echo decays show that decoherence is controlled by $^{29}$Si flip-flops resulting in both fast (exponential) and slow (non-exponential) spectral diffusion processes. The decay times span a range from 100 ms in crystals containing 50% $^{29}$Si to 3 s in crystals containing 1% $^{29}$Si. These nuclear spin echo decay times for neutral donors are orders of magnitude longer than those reported for ionized donors in natural silicon. The electron spin of the neutral donors `protects' the donor nuclear spins by suppressing $^{29}$Si flip-flops within a `frozen core', as a result of the detuning of the $^{29}$Si spins caused by their hyperfine coupling to the electron spin.

cond-mat.mes-hall↗

arXiv2015

$^{29}$Si nuclear spins as a resource for donor spin qubits in silicon

Nuclear spin registers in the vicinity of electron spins in solid state systems offer a powerful resource to address the challenge of scalability in quantum architectures. We investigate here the properties of $^{29}$Si nuclear spins surrounding donor atoms in silicon, and consider the use of such spins, combined with the donor nuclear spin, as a quantum register coupled to the donor electron spin. We find the coherence of the nearby $^{29}$Si nuclear spins is effectively protected by the presence of the donor electron spin, leading to coherence times in the second timescale - over two orders of magnitude greater than the coherence times in bulk silicon. We theoretically investigate the use of such a register for quantum error correction, including methods to protect nuclear spins from the ionisation/neutralisation of the donor, which is necessary for the re-initialisation of the ancillae qubits. This provides a route for multi-round quantum error correction using donors in silicon.

quant-ph↗

arXiv2015

The classical nature of nuclear spin noise near clock transitions of Bi donors in silicon

Whether a quantum bath can be approximated as classical noise is a fundamental issue in central spin decoherence and also of practical importance in designing noise-resilient quantum control. Spin qubits based on bismuth donors in silicon have tunable interactions with nuclear spin baths and are first-order insensitive to magnetic noise at so-called clock-transitions (CTs). This system is therefore ideal for studying the quantum/classical nature of nuclear spin baths since the qubit-bath interaction strength determines the back-action on the baths and hence the adequacy of a classical noise model. We develop a Gaussian noise model with noise correlations determined by quantum calculations and compare the classical noise approximation to the full quantum bath theory. We experimentally test our model through dynamical decoupling sequence of up to 128 pulses, finding good agreement with simulations and measuring electron spin coherence times approaching one second - notably using natural silicon. Our theoretical and experimental study demonstrates that the noise from a nuclear spin bath is analogous to classical Gaussian noise if the back-action of the qubit on the bath is small compared to the internal bath dynamics, as is the case close to CTs. However, far from the CTs, the back-action of the central spin on the bath is such that the quantum model is required to accurately model spin decoherence.

quant-ph↗

arXiv2015

Spin relaxation and donor-acceptor recombination of Se$^+$ in 28-silicon

Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly-ionised selenium donor (Se$^{+}$) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studied group V donors. Here we study the electron spin relaxation ($T_1$) and coherence ($T_2$) times of Se$^{+}$ in isotopically purified 28-silicon, and find them to be up to two orders of magnitude longer than shallow group V donors at temperatures above $\sim 15$ K. We further study the dynamics of donor-acceptor recombination between selenium and boron, demonstrating that it is possible to control the donor charge state through optical excitation of neutral Se$^0$.

cond-mat.mes-hall↗

arXiv2014

Coherent storage of microwave excitations in rare-earth nuclear spins

Interfacing between various elements of a computer - from memory to processors to long range communication - will be as critical for quantum computers as it is for classical computers today. Paramagnetic rare earth doped crystals, such as Nd$^{3+}$:Y$_2$SiO$_5$ (YSO), are excellent candidates for such a quantum interface: they are known to exhibit long optical coherence lifetimes (for communication via optical photons), possess a nuclear spin (memory) and have in addition an electron spin that can offer hybrid coupling with superconducting qubits (processing). Here we study two of these three elements, demonstrating coherent storage and retrieval between electron and $^{145}$Nd nuclear spin states in Nd$^{3+}$:YSO. We find nuclear spin coherence times can reach 9 ms at $\approx 5$ K, about two orders of magnitude longer than the electron spin coherence, while quantum state and process tomography of the storage/retrieval operation reveal an average state fidelity of 0.86. The times and fidelities are expected to further improve at lower temperatures and with more homogeneous radio-frequency excitation.

quant-ph↗

arXiv2014

Conditional control of donor nuclear spins in silicon using Stark shifts

Electric fields can be used to tune donor spins in silicon using the Stark shift, whereby the donor electron wave function is displaced by an electric field, modifying the hyperfine coupling between the electron spin and the donor nuclear spin. We present a technique based on dynamic decoupling of the electron spin to accurately determine the Stark shift, and illustrate this using antimony donors in isotopically purified silicon-28. We then demonstrate two different methods to use a DC electric field combined with an applied resonant radio-frequency (RF) field to conditionally control donor nuclear spins. The first method combines an electric-field induced conditional phase gate with standard RF pulses, and the second one simply detunes the spins off-resonance. Finally, we consider different strategies to reduce the effect of electric field inhomogeneities and obtain above 90% process fidelities.

quant-ph↗

arXiv2014

Fast, low-power manipulation of spin ensembles in superconducting microresonators

We demonstrate the use of high-Q superconducting coplanar waveguide (CPW) microresonators to perform rapid manipulations on a randomly distributed spin ensemble using very low microwave power (400 nW). This power is compatible with dilution refrigerators, making microwave manipulation of spin ensembles feasible for quantum computing applications. We also describe the use of adiabatic microwave pulses to overcome microwave magnetic field ($B_{1}$) inhomogeneities inherent to CPW resonators. This allows for uniform control over a randomly distributed spin ensemble. Sensitivity data are reported showing a single shot (no signal averaging) sensitivity to $10^{7}$ spins or $3 \times 10^{4}$ spins/$\sqrt{Hz}$ with averaging.

cond-mat.mes-hall↗

arXiv2014

Uncovering many-body correlations in nanoscale nuclear spin baths by central spin decoherence

Many-body correlations can yield key insights into the nature of interacting systems; however, detecting them is often very challenging in many-particle physics, especially in nanoscale systems. Here, taking a phosphorus donor electron spin in a natural-abundance 29Si nuclear spin bath as our model system, we discover both theoretically and experimentally that many-body correlations in nanoscale nuclear spin baths produce identifiable signatures in the decoherence of the central spin under multiple-pulse dynamical decoupling control. We find that when the number of decoupling -pulses is odd, central spin decoherence is primarily driven by second-order nuclear spin correlations (pairwise flip-flop processes). In contrast, when the number of -pulses is even, fourth-order nuclear spin correlations (diagonal interaction renormalized pairwise flip-flop processes) are principally responsible for the central spin decoherence. Many-body correlations of different orders can thus be selectively detected by central spin decoherence under different dynamical decoupling controls, providing a useful approach to probing many-body processes in nanoscale nuclear spin baths.

cond-mat.mes-hall↗

arXiv2013

Quantum bath-driven decoherence of mixed spin systems

The decoherence of mixed electron-nuclear spin qubits is a topic of great current importance, but understanding is still lacking: while important decoherence mechanisms for spin qubits arise from quantum spin bath environments with slow decay of correlations, the only analytical framework for explaining observed sharp variations of decoherence times with magnetic field is based on the suppression of classical noise. Here we obtain a general expression for decoherence times of the central spin system which exposes significant differences between quantum-bath decoherence and decoherence by classical field noise. We perform measurements of decoherence times of bismuth donors in natural silicon using both electron spin resonance (ESR) and nuclear magnetic resonance (NMR) transitions, and in both cases find excellent agreement with our theory across a wide parameter range. The universality of our expression is also tested by quantitative comparisons with previous measurements of decoherence around `optimal working points' or `clock transitions' where decoherence is strongly suppressed. We further validate our results by comparison to cluster expansion simulations.

cond-mat.mes-hall↗

arXiv2013

A single-atom electron spin qubit in silicon

A single atom is the prototypical quantum system, and a natural candidate for a quantum bit - the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps, as well as in diamond through the use of the NV-center point defect. Solid state electrical devices possess great potential to scale up such demonstrations from few-qubit control to larger scale quantum processors. In this direction, coherent control of spin qubits has been achieved in lithographically-defined double quantum dots in both GaAs and Si. However, it is a formidable challenge to combine the electrical measurement capabilities of engineered nanostructures with the benefits inherent to atomic spin qubits. Here we demonstrate the coherent manipulation of an individual electron spin qubit bound to a phosphorus donor atom in natural silicon, measured electrically via single-shot readout. We use electron spin resonance to drive Rabi oscillations, while a Hahn echo pulse sequence reveals a spin coherence time (T2) exceeding 200 μs. This figure is expected to become even longer in isotopically enriched 28Si samples. Together with the use of a device architecture that is compatible with modern integrated circuit technology, these results indicate that the electron spin of a single phosphorus atom in silicon is an excellent platform on which to build a scalable quantum computer.

cond-mat.mes-hall↗

arXiv2013

Geometric Phase Gates with Adiabatic Control in Electron Spin Resonance

High-fidelity quantum operations are a key requirement for fault-tolerant quantum information processing. In electron spin resonance, manipulation of the quantum spin is usually achieved with time-dependent microwave fields. In contrast to the conventional dynamic approach, adiabatic geometric phase operations are expected to be less sensitive to certain kinds of noise and field inhomogeneities. Here, we investigate such phase gates applied to electron spins both through simulations and experiments, showing that the adiabatic geometric phase gate is indeed inherently robust against inhomogeneity in the applied microwave field strength. While only little advantage is offered over error-correcting composite pulses for modest inhomogeneities <=10%, the adiabatic approach reveals its potential for situations where field inhomogeneities are unavoidably large.

quant-ph↗