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John L. Reno

Publications and source records attributed to John L. Reno.

22 records · Page 2Linked to original sources

Hot electron bolometer heterodyne receiver with a 4.7-THz quantum cascade laser as a local oscillator

We report on a heterodyne receiver designed to observe the astrophysically important neutral atomic oxygen [OI] line at 4.7448 THz. The local oscillator is a third-order distributed feedback Quantum Cascade Laser operating in continuous wave mode at 4.741 THz. A quasi-optical, superconducting NbN hot electron bolometer is used as the mixer. We recorded a double sideband receiver noise temperature (T^DSB_rec) of 815 K, which is ~7 times the quantum noise limit (hν/2k_B) and an Allan variance time of 15 s at an effective noise fluctuation bandwidth of 18 MHz. Heterodyne performance was confirmed by measuring a methanol line spectrum.

astro-ph.IM↗

Density imbalance effect on the Coulomb drag upturn in an electron-hole bialyer

A low-temperature upturn of the Coulomb drag resistivity measured in an undoped electron-hole bilayer (uEHBL) device, possibly manifesting from exciton formation or condensation, was recently observed. The effects of density imbalance on this upturn are examined. Measurements of drag as a function of temperature in a uEHBL with a 20 nm wide Al$_{.90}$Ga$_{.10}$As barrier layer at various density imbalances are presented. The results show drag increasing as the density of either two dimensional system was reduced, both within and above the upturn temperature regime. A comparison of the data with numerical calculations of drag in the presence of electron-hole pairing fluctuations, which qualitatively reproduce the drag upturn behavior, is also presented. The calculations, however, predict a peak in drag at matched densities, which is not reflected by the measurements.

cond-mat.mes-hall↗

Observation of a node in the quantum oscillations induced by microwave radiation

The microwave induced magnetoresistance in GaAs/AlGaAs heterostructure was studied at temperatures below 1K and frequencies in the range of 150-400 GHz. A distinct node in the Shubnikov- de Haas oscillations, induced by the microwave radiation, is clearly observed. The node position coincides with the position of the cyclotron resonance on the carriers with effective mass (0.068 +/- 0.005) m0.

cond-mat.mes-hall↗

Temperature dependence and mechanism of electrically detected ESR at the n=1 filling factor of a two-dimensional electron system in GaAs quantum wells

Electrically detected electron spin resonance (EDESR) signals were acquired as a function of temperature in the 0.3-4.2 K temperature range in a AlGaAs/GaAs multiple quantum well sample at the filling factor at 5.7 T. In the particular sample studied, the line width is approximately temperature independent, while the amplitude exhibits a maximum at about 2.2 K and vanishes with increased or decreased temperature. To explain the observed temperature dependence of the signal amplitude, the signal amplitude temperature dependence is calculated assuming a model based on heating. The model ascribes the resonant absorption of microwave power of the 2DES to the uniform mode of the electron spin magnetization where the elementary spin excitations at filling factor are taken to be spin waves, while the short wavelength spin wave modes serve as a heat sink for the absorbed energy. Due to the finite thermal conductance to the surroundings, the temperature of the 2DES spin wave system is increased, resulting in a thermal activation of the longitudinal magnetoconductance. The proposed heating model correctly predicts the location of the maximum in the experimentally observed temperature dependence of the EDESR amplitude. It also correctly predicts that the signal should vanish as the temperature is increased or decreased. The results of the present study demonstrate how experimental EDESR studies can, under appropriate conditions, provide data that can be used to discriminate between competing theories for the magnetic ordering and magnetic excitations of a 2DES in the regime of the quantum Hall effect.

cond-mat.mes-hall↗