arXiv subjects

John M. Nichol

Publications and source records attributed to John M. Nichol.

At least 19 recordsLinked to original sources

arXiv2026

Mitigating Residual Exchange Coupling in Resonant Singlet-Triplet Qubits

We propose methods to mitigate single- and two-qubit control errors due to residual exchange coupling in systems of exchange-coupled resonant singlet-triplet qubits. Commensurate driving, where the pulse length is an integer multiple of the drive period, can mitigate errors from residual intra-qubit exchange, including effects from counter rotating terms and off-axis rotations, as well as leakage errors during two-qubit operations. Residual inter-qubit exchange creates crosstalk errors that reduce single-qubit control fidelities. We show that using a single-spin coupler between two resonant singlet-triplet qubits can reduce this crosstalk error by an order of magnitude. Assuming perfect coupler state preparation and realistic charge and hyperfine noise, we predict that coupler-assisted two-qubit gate errors can be below $3\times10^{-3}$ for gate times as short as $66~\text{ns}$, even in the presence of residual exchange levels exceeding several hundred kHz. Our results suggest the potential of utilizing coupler-based architectures for large scale fault-tolerant spin qubit processors based on resonant singlet-triplet qubits.

quant-ph↗

arXiv2026

Measuring and correcting nanosecond pulse distortions in quantum-dot spin qubits

Gate-defined semiconductor quantum dots utilize fast electrical control to manipulate spin and charge states of individual electrons. Electrical pulse distortions can limit control fidelities but are difficult to measure at the device level. Here, we use detuning-axis pulsed spectroscopy to characterize baseband pulse distortions in a silicon double quantum-dot. We extract the gate-voltage impulse response and apply a digital pre-distortion filter to eliminate pulse distortions on timescales longer than 1~ns. With the pre-distortion, we reduce the frequency chirp of coherent exchange oscillations in a singlet-triplet qubit. Our results suggest a scalable and tuning-efficient method for characterizing pulse distortions in quantum-dot spin qubits.

quant-ph↗

arXiv2026

Phase locking nuclear spins in silicon with spin-orbit coupling

Because they have such long coherence times, nuclear spins have extraordinary potential for use in quantum information processing devices. However, coherent nuclear spin control generally requires external phase references, such as microwave control fields. Here, we phase-lock a $^{29}$Si nuclear spin ensemble in a silicon quantum dot using only the internal electronic spin-orbit coupling as a phase reference. When driven with the quantum-dot electrons, the nuclear spins align themselves to a phase determined by the electronic spin-orbit coupling and the timing of the drive protocol. This enables us to measure the coherent precession and inhomogeneous dephasing of the nuclear spins. We corroborate our results with detailed numerical simulations of the many-body electron nuclear system. Our work opens new routes for coherently controlling solid-state nuclear spin ensembles.

quant-ph↗

arXiv2026

Stochastic trajectories and excursions in a double quantum dot system

We investigate the trajectory-level dynamics of a double quantum dot system using the newly developed formalism of stochastic excursions. This approach extends full counting statistics by enabling a filtering of complex trajectories into sub-trajectories, which provide access to the intricate correlations between thermodynamic currents and excursion times. Counting observables are the main object of study in the stochastic excursion framework. Those are defined as a linear combination of transition counts multiplied by their assigned weights within one excursion. For three main counting observables -- charge current, dynamical activity, and entropy production -- we compute averages and noise contributions and show how they provide insights into the operation of the double quantum dot system. At the trajectory level, we analyze outcome distributions for transport and connect the results with trade-offs between successful and unsuccessful events that shape overall performance. We further introduce state observables, which depend on the state visited rather than the transition itself, and discuss the population of the two dots, as well as their correlations. Finally, we discuss thermodynamics of precision through thermo-kinetic uncertainty relations, showing how current precision in different regimes is fundamentally constrained either by entropy production or by dynamical activity. Altogether, our work is a case study that highlights the utility of the excursion framework as a toolkit to analyze many quantities of interest and to uncover the structure of nonequilibrium fluctuations. Moreover, it also suggests new avenues for refining uncertainty relations and understanding transport in mesoscopic systems.

quant-ph↗

arXiv2026

Measuring pulse heating in Si quantum dots with individual two-level fluctuators

To encode quantum information in semiconductor spin qubits, voltage pulses are necessary for initialization, gate operation, and readout. However, these pulses dissipate heat, shifting spin-qubit frequencies and reducing gate fidelities. The cause of this pulse heating in quantum-dot devices is unknown. Here, we measure pulse heating using charged two-level fluctuators (TLFs) in Si/SiGe quantum dots. Specifically, we observe that voltage pulses on nearby gates tend to increase TLF switching rates and occupation biases. The amount of heating depends on the pulse amplitude and frequency, but not on the distance between the pulsed gates and the TLFs. The amount of heating also generally depends on the idling voltage of the pulsed gates, suggesting that electrons accumulated under or near the gates contribute to the heating. We hypothesize that reducing the area of the gates with electrons nearby could mitigate the heating.

cond-mat.mes-hall↗

arXiv2026

Multi-level charge fluctuations in a Si/SiGe double quantum dot device

Discrete charge fluctuations, routinely observed in semiconductor quantum dot devices, may contribute significantly to device drift and errors resulting from qubit miscalibration. Understanding the nature and origins of these discrete charge fluctuations may provide insights into material improvements or means of mitigating charge noise in semiconductor quantum dot devices. In this work, we measure multi-level charge fluctuations present in a Si/SiGe double quantum dot device over a range of device operating voltages and temperatures. To characterize the parameter-dependent dynamics of the underlying fluctuating degrees of freedom, we perform a detailed analysis of the measured noise timeseries. We perform algorithmically assisted drift detection and change point detection to detrend the data and remove a slow fluctuator component, as a preprocessing step. We perform model comparison on the post-processed time series between different $n$-level fluctuator ($n$LF) factorial hidden Markov models (FHMMs), finding that although at most sweep values the independent pair of 2LFs model would be preferred, in a particular region of voltage space the 4LF model outperforms the other models, indicating a conditional rate dependence between the two fluctuators. By tracking fluctuator transition rates, biases, and weights over a range of different device configurations, we estimate gate voltage and conductivity sensitivity. In particular, we fit a phenomenological, detailed balance model to the extracted independent 2LFs rate data, yielding lever arm estimates in the range of $-2 μ$eV/mV up to $4 μ$eV/mV between the two 2LFs and nearby gate electrodes. We expect that these characterization results may aid in subsequent spatial triangulation of the charge fluctuators.

cond-mat.mes-hall↗

arXiv2025

Pyroelectric effects in hybrid semiconductor-lithium niobate quantum devices

Hybrid quantum devices using surface acoustic waves show promise as key elements of quantum information processors. We report measurements of integrated flip-chip devices consisting of semiconductor quantum dots and surface acoustic wave resonators in lithium niobate. We observed that the pyroelectric effect in lithium niobate inhibited the operation of quantum dots in the integrated devices. GaAs/AlGaAs devices suffered from unintentional carrier depletion, and Si/SiGe devices suffered from electrostatic discharge. Our results highlight the importance of mitigating pyroelectric effects in semiconductor-lithium niobate hybrid devices for continued progress in quantum interconnects and transducers.

cond-mat.mes-hall↗

arXiv2025

The formation of a nuclear-spin dark state in silicon

Silicon-based qubits are often made by trapping individual electrons in quantum dots defined by electric gates. Quantum information can then be stored using the spin states of the electrons. However, the nuclei of the surrounding atoms also have spin degrees of freedom that couple to the electron spin qubits and cause decoherence. The emergence of a nuclear-spin dark state has been predicted to reduce this coupling during dynamic nuclear polarization, when the electrons in the quantum dot drive the nuclei in the semiconductor into a decoupled state. Here, we report the formation of a nuclear-spin dark state in a gate-defined silicon double quantum dot. We show that, as expected, the transverse electron-nuclear coupling rapidly diminishes in the dark state, and that this state depends on the synchronized precession of the nuclear spins. Moreover, the dark state significantly reduces the relaxation rate between the singlet and triplet electronic spin states. This nuclear-spin dark state has potential applications as a quantum memory or in quantum sensing, and might enable increased polarization of nuclear spin ensembles.

cond-mat.mes-hall↗

arXiv2025

Stabilizing an individual charge fluctuator in a Si/SiGe quantum dot

Charge noise is a major obstacle to improved gate fidelities in silicon spin qubits. Numerous methods exist to mitigate charge noise, including improving device fabrication, dynamical decoupling, and real-time parameter estimation. In this work, we demonstrate a new class of techniques to mitigate charge noise in semiconductor quantum dots by controlling the noise sources themselves. Using two different classical feedback methods, we stabilize an individual charged two-level fluctuator in a Si/SiGe quantum dot by exploiting sensitive gate-voltage dependence of the switching times. These control methods reduce the low-frequency component of the noise power spectrum by an order of magnitude. These techniques also enable stabilizing the fluctuator in either of its states. In the future, such techniques may enable improved coherence times in quantum-dot spin qubits.

cond-mat.mes-hall↗

arXiv2024

Characterization of individual charge fluctuators in Si/SiGe quantum dots

Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high gate fidelities can be achieved with spin qubits, charge noise in the semiconductor environment still hinders further improvements. Despite the importance of charge noise, key questions about the specific nature of the fluctuators that cause charge noise remain unanswered. Here, we probe individual two-level fluctuators (TLFs) in Si/SiGe quantum dots through simple quantum-dot transport measurements and analyses based on the Allan variance and factorial hidden Markov modeling. We find that the TLF switching times depend sensitively on gate voltages, decrease with temperature, and depend on the current through a nearby quantum dot. A model for the data of the primary TLF we study indicates that it may be a bistable charge dipole near the plunger gate electrode, heated by current through the sensor dot, and experiencing state transitions driven not by direct electron-phonon coupling but through some other mechanism such as coupling to electrons passing through the sensor dot.

cond-mat.mes-hall↗

arXiv2024

Dynamically corrected gates in silicon singlet-triplet spin qubits

Fault-tolerant quantum computation requires low physical-qubit gate errors. Many approaches exist to reduce gate errors, including both hardware- and control-optimization strategies. Dynamically corrected gates are designed to cancel specific errors and offer the potential for high-fidelity gates, but they have yet to be implemented in singlet-triplet spin qubits in semiconductor quantum dots, due in part to the stringent control constraints in these systems. In this work, we experimentally implement dynamically corrected gates designed to mitigate hyperfine noise in a singlet-triplet qubit realized in a Si/SiGe double quantum dot. The corrected gates reduce infidelities by about a factor of three, resulting in gate fidelities above 0.99 for both identity and Hadamard gates. The gate performances depend sensitively on pulse distortions, and their specific performance reveals an unexpected distortion in our experimental setup.

quant-ph↗

arXiv2024

Ballast charges for semiconductor spin qubits

Semiconductor spin qubits are an attractive platform for quantum computing, but their performance is degraded primarily by fluctuating electromagnetic environments. We introduce the concept of ballast charges, which are induced charges on the surface of an additional screening layer situated below the qubits. The counteractive behavior of these charges can significantly reduce the power spectral density associated with fluctuations from two-level systems that contribute to charge noise. Our simulations show that the dephasing time of a spin qubit in a Si/SiGe device increases by a factor of 4 to 6 on average when using this method. We also discuss the physical implementation and potential challenges of this approach.

cond-mat.mes-hall↗

arXiv2024

High-impedance surface acoustic wave resonators

Because of their small size, low loss, and compatibility with magnetic fields and elevated temperatures, surface acoustic wave resonators hold significant potential as future quantum interconnects. Here, we design, fabricate, and characterize GHz-frequency surface acoustic wave resonators with the potential for strong capacitive coupling to nanoscale solid-state quantum systems, including semiconductor quantum dots. Strong capacitive coupling to such systems requires a large characteristic impedance, and the resonators we fabricate have impedance values above 100 $Ω$. We achieve such high impedance values by tightly confining a Gaussian acoustic mode. At the same time, the resonators also have low loss, with quality factors of several thousand at millikelvin temperatures. These high-impedance resonators are expected to exhibit large vacuum electric-field fluctuations and have the potential for strong coupling to a variety of solid-state quantum systems.

cond-mat.mes-hall↗

arXiv2023

Coherent Optical Coupling to Surface Acoustic Wave Devices

Surface acoustic waves (SAW) and associated SAW devices are ideal for sensing, metrology, and connecting and controlling hybrid quantum devices. While the advances demonstrated to date are largely based on electromechanical coupling, a robust and customizable coherent optical coupling would unlock mature and powerful cavity optomechanical control techniques and an efficient optical pathway for long-distance quantum links. Here we demonstrate direct and robust coherent optical coupling to surface acoustic wave cavities through a Brillouin-like optomechanical interaction. In high-frequency SAW cavities designed with curved metallic acoustic reflectors deposited on crystalline substrates, SAW modes are efficiently optically accessed in piezo-active directions that can be accessed through traditionally electromechanical techniques as well as non-piezo-active directions that cannot. The non-contact nature of the optical technique enables controlled analysis of dissipation mechanisms and access to pristine mechanical resonators with record-level quality factors (>100,000 measured here). The exceptional control of the optical probe beams also enables detailed transverse spatial mode spectroscopy, for the first time. These advantages combined with simple fabrication, small size, large power handling, and strong coupling to quantum systems make SAW optomechanical platforms particularly attractive for sensing, material science, and hybrid quantum systems.

physics.optics↗

arXiv2022

Analog Quantum Simulation of the Dynamics of Open Quantum Systems with Quantum Dots and Microelectronic Circuits

We introduce a general setup for the analog quantum simulation of the dynamics of open quantum systems based on semiconductor quantum dots electrically connected to a chain of quantum $RLC$ electronic circuits. The dots are chosen to be in the regime of spin-charge hybridization to enhance their sensitivity to the $RLC$ circuits while mitigating the detrimental effects of unwanted noise. In this context, we establish an experimentally realizable map between the hybrid system and a qubit coupled to thermal harmonic environments of arbitrary complexity that enables the analog quantum simulation of open quantum systems. We assess the utility of the simulator by numerically exact emulations that indicate that the experimental setup can faithfully mimic the intended target even in the presence of its natural inherent noise. We further provide a detailed analysis of the physical requirements on the quantum dots and the $RLC$ circuits needed to experimentally realize this proposal that indicates that the simulator can be created with existing technology. The approach can exactly capture the effects of highly structured non-Markovian quantum environments typical of photosynthesis and chemical dynamics, and offer clear potential advantages over conventional and even quantum computation. The proposal opens a general path for effective quantum dynamics simulations based on semiconductor quantum dots.

quant-ph↗

arXiv2022

Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations

Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to achieving high-fidelity single- and two-qubit gates in these devices. In this work, we measure the charge-noise spectrum of a Si/SiGe singlet-triplet qubit over nearly 12 decades in frequency using a combination of methods, including dynamically-decoupled exchange oscillations with up to 512 π pulses during the qubit evolution. The charge noise is colored across the entire frequency range of our measurements, although the spectral exponent changes with frequency. Moreover, the charge-noise spectrum inferred from conductance measurements of a proximal sensor quantum dot agrees with that inferred from coherent oscillations of the singlet-triplet qubit, suggesting that simple transport measurements can accurately characterize the charge noise over a wide frequency range in Si/SiGe quantum dots.

cond-mat.mes-hall↗

arXiv2021

Semiconductor Spin Qubits

The spin degree of freedom of an electron or a nucleus is one of the most basic properties of nature and functions as an excellent qubit, as it provides a natural two-level system that is insensitive to electric fields, leading to long quantum coherence times. We review the physics of semiconductor spin qubits, focusing not only on the early achievements of spin initialization, control, and readout in GaAs quantum dots, but also on recent advances in Si and Ge spin qubits, including improved charge control and readout, coupling to other quantum degrees of freedom, and scaling to larger system sizes. We begin by introducing the four major types of spin qubits: single spin qubits, donor spin qubits, singlet-triplet spin qubits, and exchange-only spin qubits. We then review the mesoscopic physics of quantum dots, including single-electron charging, valleys, and spin-orbit coupling. We next give a comprehensive overview of the physics of exchange interactions, a crucial resource for single- and two-qubit control in spin qubits. The bulk of this review is centered on the presentation of results from each major spin qubit type, the present limits of fidelity, and a brief overview of alternative spin qubit platforms. We then give a physical description of the impact of noise on semiconductor spin qubits, aided in large part by an introduction to the filter function formalism. Lastly, we review recent efforts to hybridize spin qubits with superconducting systems, including charge-photon coupling, spin-photon coupling, and long-range cavity-mediated spin-spin interactions. Cavity-based readout approaches are also discussed. This review is intended to give an appreciation for the future prospects of semiconductor spin qubits, while highlighting the key advances in mesoscopic physics over the past two decades that underlie the operation of modern quantum-dot and donor spin qubits.

cond-mat.mes-hall↗

arXiv2021

Coherent spin-valley oscillations in silicon

Electron spins in silicon quantum dots are excellent qubits because they have long coherence times, high gate fidelities, and are compatible with advanced semiconductor manufacturing techniques. The valley degree of freedom, which results from the specific character of the Si band structure, is a unique feature of electrons in Si spin qubits. However, the small difference in energy between different valley levels often poses a challenge for quantum computing in Si. Here, we show that the spin-valley coupling in Si, which enables transitions between states with different spin and valley quantum numbers, enables coherent control of electron spins in Si. We demonstrate coherent manipulation of effective single- and two-electron spin states in a Si/SiGe double quantum dot without ac magnetic or electric fields. Our results illustrate that the valley degree of freedom, which is often regarded as an inconvenience, can itself enable quantum manipulation of electron spin states.

cond-mat.mes-hall↗