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John Newman

Publications and source records attributed to John Newman.

3 recordsLinked to original sources

A Primitive Model for Predicting Membrane Currents in Excitable Cells Based Only on Ion Diffusion Coefficients

Classical models for predicting current flow in excitable cells such as axons, originally proposed by Hodgkin and Huxley, rely on empirical voltage-gating parameters that quantify ion transport across sodium and potassium ion channels. We propose a primitive model for predicting these currents based entirely on well-established ion diffusion coefficients. Changes inside the excitable cell due to the opening of a central sodium channel are confined to a growing hemisphere with a radius that is governed by the sodium ion diffusion coefficient. The sodium channel, which is open throughout the calculation, activates and deactivates naturally due to coupled electrodiffusion processes. The characteristic time of current pulses, which are in the picoampere range, increases from 10$^{-5}$ to 10$^{-1}$ s as channel density is decreased from 10,000 to 1 channel per micrometer squared. Model predictions are compared with data obtained from giant squid axons without invoking any gating parameters.

physics.bio-ph

Analysis of Lithiation and Delithiation Kinetics in Silicon

Analysis of lithiation and delithiation kinetics in pulse-laser-deposited crystalline thin-film silicon (Si) electrodes is presented. Data from open-circuit relaxation experiments are used in conjunction with a model based on Tafel kinetics and double-layer capacitance to estimate the apparent transfer coefficients (αa, αc), and exchange current density to capacitance ratio (i0/Cdl) for lithiation and delithiation reactions in a lithiated silicon (LixSi) system. Parameters estimated from data sets obtained during first-cycle amorphization of crystalline Si, as well as from cycled crystalline Si and amorphous Si thin-film electrodes do not show much variation, indicating that they are intrinsic to lithiation/delithiation in Si. A methodology to estimate the side-reaction rate and its role in the evolution of the open-circuit potential of the LixSi system are discussed. We conclude that the large potential offset between lithiation and delithiation reactions at any given state of charge is partially caused by a large kinetic resistance (i.e., small i0). Using the estimated parameters, the model is shown to predict successfully the behavior of the system under galvanostatic lithiation and delithiation.

cond-mat.mtrl-sci

A complexity measure for diachronic Chinese phonology

This paper addresses the problem of deriving distance measures between parent and daughter languages with specific relevance to historical Chinese phonology. The diachronic relationship between the languages is modelled as a Probabilistic Finite State Automaton. The Minimum Message Length principle is then employed to find the complexity of this structure. The idea is that this measure is representative of the amount of dissimilarity between the two languages.

cmp-lg