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Jolie Wang

Publications and source records attributed to Jolie Wang.

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RF-Agent: A Practical Framework for Building Language Agents for RFIC Design

Large language models (LLMs) have driven rapid progress in electronic design automation (EDA), yet their application to radio-frequency (RF) circuit design remains limited by the scarcity of domain-specific datasets and standardized benchmarks. We present RF-Agent, which addresses this gap through textbook-driven knowledge distillation. A multi-agent Question-Thinking-Solution-Answer (QTSA) pipeline converts a subsection-level corpus from seven canonical RF textbooks into the first-of-its-kind RF-domain reasoning dataset (over 11,000 samples) with a dedicated multiple-choice benchmark. On this benchmark we study two adaptation strategies: supervised fine-tuning (SFT) and three retrieval-augmented generation (RAG) configurations (semantic, keyword, hybrid). Across multiple LLM families, domain-specific SFT significantly improves RF reasoning, especially for small and medium-sized models; among RAG configurations, semantic retrieval performs best, indicating embedding-based context alignment suits RF reasoning better than naive fusion. The dataset and benchmark provide a reusable foundation for future work on LLM-aided RF circuit design.

cs.CL

A self-heating electrochemical cell with nine decades of programmable linear resistance

A programmable linear resistor with a compact footprint would have profound implications for microelectronics, enabling efficient in-sensor analog signal processing and in-memory computing. Non-volatile memory offers a potential solution but suffers from limitations due to the programming mechanisms that confine switching to nanoscale constrictions or field-sensitive semiconductor junctions, leading to non-linear current-voltage relationships and errors. Here, we introduce a tunable resistor that is programmed into non-volatile, high-precision resistance states spanning nine orders of magnitude, with linear current-voltage characteristics across the entire range -- significantly improving the performance and widening the application space of resistive memory. A key advance is an electrothermal gate that simultaneously spreads heat and electrochemical reactions during programming to enable large, bulk composition modulation. The volumetric modulation can host thousands of linear resistance states with 100x lower conductance errors than other memory. This enables direct processing of analog signals with high fidelity, and we demonstrate variable-gain amplification, division, and multiplication. Integration with CMOS is used to show resilience to electrical and thermal disturb in arrays and to demonstrate retention of analog levels at <1% average loss for more than 2 months across 100 devices. Simulations indicate matrix multiplication efficiency could approach >1,000 TOPS/W.

cs.ET