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Jonas D. Gerber

Publications and source records attributed to Jonas D. Gerber.

6 recordsLinked to original sources

Low-Frequency Charge Noise in Bilayer Graphene Quantum Dots

Bilayer graphene (BLG) quantum dots (QDs) are a promising platform for semiconductor qubits. However, the low-frequency charge noise that may ultimately limit coherence has remained largely unexplored. Here, we systematically characterize charge noise in gate-defined BLG QDs using transport-based noise spectroscopy. We extract a median amplitude of $ S_\mu^{1/2} (1~\text{Hz}) = 1.16~\mu\text{eV}/\sqrt{\text{Hz}}$, placing BLG well within the range reported for established semiconductor quantum-dot platforms. Across variations in charge occupation, confinement, source-drain bias, and charge-sensor operating conditions, neither the noise amplitude nor the spectral dependence shows a reproducible trend in electrostatic tuning, indicating that we extracted the intrinsic semiconductor noise. Consistent noise levels are further observed in double QDs and confirmed using an independent superconducting resonator-based dispersive readout. Extending the study to BLG devices incorporating transition metal dichalcogenide layers reveals no measurable charge noise increase in weakly proximitized QDs. These results validate BLG as a viable platform for coherent quantum information processing.

cond-mat.mes-hall

Proximity-induced superconductivity in a bilayer graphene quantum point contact

We report the realization of a gate-defined quantum point contact (QPC) in bilayer graphene proximitized by a single aluminum superconducting electrode. Superconducting correlations induced in the ballistic channel enhance the conductance plateaus beyond their normal-state values. In addition, we observe a pronounced above-gap conductance anomaly which serves as a spectroscopic signature of the loss of superconductivity and the associated collapse of the Andreev excess current. By reconstructing the nonlinear current-voltage characteristics, we find that the magnitude of the excess current increases as successive QPC modes are populated. Additionally, we find that the switching current associated with the loss of superconductivity follows the underlying mode structure of the QPC, exhibiting discrete levels consistent with a heat dissipation-driven transition. These results demonstrate that the one-dimensional transport modes of the QPC govern both the equilibrium proximity effect and the non-equilibrium dynamics of the hybrid system.

cond-mat.mes-hall

Time-resolved Charge Detection in Transition Metal Dichalcogenide Quantum Dots

We investigate electronic transport through gate-defined quantum dots in molybdenum disulfide MoS$_2$ using an integrated charge detector. We observe a crossover from two weakly coupled single dots to a strongly coupled double quantum dot. In the regime of extremely weak dot-lead coupling, where the direct transport current is below the detection limit, we measure the dot occupation via charge detection and access the few-electron regime. Due to the large band gap of MoS$_2$, tunneling rates can be sufficiently suppressed to resolve individual tunneling events. These results establish a platform for single-shot spin- and valley-to-charge conversion and highlight the potential of transition-metal dichalcogenide quantum dots for quantum information applications.

cond-mat.mes-hall

Spin-valley 0.7 anomaly in bilayer graphene/WSe$_2$ quantum point contacts

We report a well-resolved 0.7 conductance anomaly at $G = 0.7\times(2e^2/h)$ in bilayer graphene/WSe$_2$ quantum point contacts. Proximity-enhanced spin-orbit coupling splits the four-fold ground state of bilayer graphene into well-separated spin-valley locked Kramers doublets. The anomaly emerges between these opposite spin-valley states. Despite fundamentally different band structure and wavefunction characteristics, the temperature and bias phenomenology closely mirror GaAs systems. In contrast, the parallel magnetic field response differs significantly, confirming the central role of valley degrees of freedom. This opens new pathways to study valley-exchange correlation physics in regimes inaccessible to conventional semiconductors.

cond-mat.mes-hall

Tunable spin-orbit splitting in bilayer graphene/WSe$_2$ quantum devices

Bilayer graphene (BLG)-based quantum devices represent a promising platform for emerging technologies, such as quantum computing and spintronics. However, their intrinsically weak spin-orbit coupling (SOC) complicates spin and valley manipulation. Integrating BLG with transition metal dichalcogenides (TMDs) enhances the SOC via proximity effects. While this enhancement has been demonstrated in 2D-layered structures, 1D and 0D nanostructures in BLG/TMD remain unrealized, with open questions regarding SOC strength and tunability. Here, we investigate quantum point contacts and quantum dots in two BLG/WSe$_2$ heterostructures with different stacking orders. Across multiple devices, we reproducibly demonstrate spin-orbit splitting up to 1.5 meV - more than 1 order of magnitude higher than in pristine BLG. Furthermore, we show that the induced SOC can be tuned in situ from its maximum value to near-complete suppression via the perpendicular electric field. This enhancement and in situ tunability establish the SOC as a control mechanism for dynamic spin and valley manipulation.

cond-mat.mes-hall

Spin-Valley Protected Kramers Pair in Bilayer Graphene

The intrinsic valley degree of freedom makes bilayer graphene (BLG) a unique platform for semiconductor qubits. The single-carrier quantum dot (QD) ground state exhibits a two-fold degeneracy, where the two states that constitute a Kramers pair, have opposite spin and valley quantum numbers. Because of the valley-dependent Berry curvature, an out-of-plane magnetic field breaks the time-reversal symmetry of this ground state and a qubit can be encoded in the spin-valley subspace. The Kramers states are protected against known spin- and valley-mixing mechanisms because mixing requires a simultaneous change of both quantum numbers. Here, we fabricate a tunable QD device in Bernal BLG and measure a spin-valley relaxation time for the Kramers states of ${38~\mathrm{s}}$, which is two orders of magnitude longer than the ${0.4~\mathrm{s}}$ measured for purely spin-blocked states. We also show that the intrinsic Kane-Mele spin-orbit splitting enables a Kramers doublet single-shot readout even at zero magnetic field with a fidelity above ${99\%}$. If these long-lived Kramers states also possess long coherence times and can be effectively manipulated, electrostatically defined QDs in BLG may serve as long-lived semiconductor qubits, extending beyond the spin qubit paradigm.

cond-mat.mes-hall