arXiv subjects

Jonas Sichau

Publications and source records attributed to Jonas Sichau.

5 recordsLinked to original sources

arXiv2021

Polarization amplification by spin-doping in nanomagnetic/graphene hybrid systems

The generation of non-equilibrium electron spin polarization, spin transport, and spin detection are fundamental in many quantum devices. We demonstrate that a lattice of magnetic nanodots enhances the electron spin polarization in monolayer graphene via carrier exchange. We probed the spin polarization through a resistively-detected variant of electron spin resonance (ESR) and observed resonance amplification mediated by the presence of the nanodots. Each nanodot locally injects a surplus of spin-polarized carriers into the graphene, and the ensemble of all "spin hot spots" generates a non-equilibrium electron spin polarization in the graphene layer at macroscopic lengths. This occurs whenever the interdot distance is comparable or smaller than the spin diffusion length.

cond-mat.mes-hall↗

arXiv2020

Dirac imprints on the $g$-factor anisotropy in graphene

Dirac electrons in graphene are to lowest order spin 1/2 particles, owing to the orbital symmetries at the Fermi level. However, anisotropic corrections in the $g$-factor appear due to the intricate spin-valley-orbit coupling of chiral electrons. We resolve experimentally the $g$-factor along the three orthogonal directions in a large-scale graphene sample. We employ a Hall bar structure with an external magnetic field of arbitrary direction, and extract the effective $g$-tensor via resistively-detected electron spin resonance. We employ a theoretical perturbative approach to identify the intrinsic and extrinsic spin orbit coupling and obtain a fundamental parameter inherent to the atomic structure of $^{12}$C, commonly used in ab-initio models.

cond-mat.mes-hall↗

arXiv2018

Intrinsic spin-orbit coupling gap and the evidence of a topological state in graphene

In 2005 Kane & Mele[C. L. Kane and E. J. Mele, Phys. Rev. Lett. 95, 226801 (2005)], predicted that at sufficiently low energy, graphene exhibits a topological state of matter with an energy gap generated by the atomic spin-orbit interaction. However, this intrinsic gap has not been measured to this date. In this letter, we exploit the chirality of the low energy states to resolve this gap. We probe the spin states experimentally, by employing low temperature microwave excitation in a resistively detected electron spin resonance on graphene. The structure of the topological bands is reflected in our transport experiments, where our numerical models allow us to identify the resonance signatures. We determine the intrinsic spin-orbit bulk gap to be exactly 42.2 μeV. Electron-spin resonance experiments can reveal the competition between the intrinsic spin-orbit coupling and classical Zeeman energy that arises at low magnetic fields and demonstrate that graphene remains to be a material with surprising properties.

cond-mat.mes-hall↗

arXiv2017

Upscaling High-Quality CVD Graphene Devices to 100 Micron-Scale and Beyond

We describe a method for transferring ultra large-scale CVD-grown graphene sheets. These samples can be fabricated as large as several cm$^2$ and are characterized by magneto-transport measurements on SiO$_2$ substrates. The process we have developed is highly effective and limits damage to the graphene all the way through metal liftoff, as shown in carrier mobility measurements and the observation of the quantum Hall effect. The charge-neutral point is shown to move drastically to near-zero gate voltage after a 2-step post-fabrication annealing process, which also allows for greatly diminished hysteresis.

cond-mat.mtrl-sci↗

arXiv2016

Probing Electron Spin Resonance in Monolayer Graphene

The precise value of the $g$-factor in graphene is of fundamental interest for all spin-related properties and their application. We investigate monolayer graphene on a Si/SiO2 substrate by resistively detected electron spin resonance (ESR). Surprisingly, the magnetic moment and corresponding g-factor of 1.952+/-0.002 is insensitive to charge carrier type, concentration, and mobility.

cond-mat.mtrl-sci↗