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Jonathan Frank

Publications and source records attributed to Jonathan Frank.

3 recordsLinked to original sources

Chimaera: A Mixture-of-Graph-Experts Architecture for Cross-Task and Cross-Dataset Graph Learning

Designing foundation models for graphs is challenging due to the irregular structure of graphs and the different sizes and characteristics of embeddings. Chimaera integrates mixture-of-experts with graph foundation models (GFM). It integrates different GFM architectures, such as graph prompts and linear GNN models. Large language models are used to generate embeddings, and experts can be trained and combined following different strategies, GFMs, embeddings, etc. Furthermore, Chimaera extends existing linear GNNs to support link-level and graph-level tasks in addition to node-level tasks. Empirical analyses are performed on same-task and cross-task experiments with node, link, and graph classification tasks using six benchmark text-attributed graph datasets. The experiments demonstrate the effectiveness of Chimaera and its capabilities for transfer across tasks and datasets. Further insights include the need to use both large and small language models to generate embeddings for the experts, a strong cross-task transferability of simple but effective linear GNNs, and using few samples only to provide strong results.

cs.LG

Bonding Signatures of Incipient Electron Localization in Topological Chiral Semimetals Near the Metal-Insulator Transition

How do electronic localization and delocalization compete in solids beyond the traditional limiting cases of metals and iono-covalent insulators? Topological chiral semimetals (TCSMs), characterized by their unique crystal symmetry, offer an intriguing platform to explore this question. Here, we systematically compare TCSMs with covalent compounds, ordinary metals, and metavalent solids (incipient metals), and show that TCSMs occupy a distinct region in a multidimensional property fingerprint. Atom probe tomography reveals an unusual bond-rupture signature, consistent with a bonding regime intermediate between electron localization and delocalization. This interpretation is supported by measurements of optical properties showing a transfer of spectral weight from interband to intraband transitions. For highly conductive TCSMs, this transition is accompanied by the disappearance of the Born effective charge, a measure of chemical bond polarizability, while less conductive TCSMs retain a nonzero value. Together, these results identify a property based bonding perspective on TCSMs that distinguishes them from metals, covalent solids, and metavalent compounds. Although metavalent solids and TCSMs both lie near the metal-insulator transition and exhibit distorted crystal structures, ultrafast coherent phonon spectroscopy reveals fundamentally different lattice-dynamical responses: a phonon-driven Peierls-like instability in metavalent solids versus a robust chiral B20 bonding motif in TCSMs.

cond-mat.mtrl-sci

Robust Material Properties in Epitaxial In$_2$Te$_3$ Thin Films Across Varying Thicknesses

Sesqui-chalcogenides serve as a critical bridge between traditional semiconductors and quantum materials, offering significant potential in applications such as thermoelectrics, phase change memory, and topological insulators. While considerable attention has been focused on antimony- and bismuth-based compounds, characterized by substantial property changes upon reduction in film thickness, indium containing sesqui-chalcogenides like In$_2$Te$_3$ are emerging as promising candidates for photovoltaics and electronic devices. However, the effects of film thickness on the properties of In$_2$Te$_3$ remain largely unexplored. In this study, we investigate high-quality In$_2$Te$_3$ thin films grown by molecular beam epitaxy on Si(111) substrates across a thickness range from 2.7 nm to 24 nm. We employ X-ray diffraction, reflective high-energy electron diffraction and atomic force microscopy to analyze both the crystal structure and film morphology. Additionally, we utilize broadband optical spectroscopy alongside femtosecond pump-probe measurements and Raman spectroscopy to assess optical and vibrational properties, respectively. Our analysis reveals that material properties exhibit minimal dependence on film thickness, contrasting sharply with behavior observed in other chalcogenides such as Sb$_2$Te$_3$, Bi$_2$Se$_3$, or GeTe. This phenomenon can be attributed to covalent bonding present in In$_2$Te$_3$, which differs from those in its antimony- and bismuth-containing counterparts.

cond-mat.mtrl-sci