Jong Keuk Park | Searcharxiv

arXiv2026

Electrolyte Bonding Engineering for Highly Uniform GeTe-based CBRAM and Parallel Hebbian Learning in Selector-free Hopfield Networks

Hopfield networks offer a hardware-friendly framework for energy-efficient associative memory, yet their practical realization in memristor crossbar arrays is critically hindered by device-to-device (D2D) variability, which prevents reliable parallel programming. Here, we address this bottleneck through systematic composition engineering of the Ge-Te solid electrolyte in conductive bridge random access memory (CBRAM) devices. By varying the Ge:Te ratio, we identify Ge3.5Te1 as an optimal electrolyte composition that suppresses stochastic resistance variation by approximately three orders of magnitude compared to GeSe-based devices. Raman spectroscopy reveals that this dramatic improvement originates from a bonding network dominated by asymmetric-stretching GeTe4 tetrahedral units, which form interconnected free-volume channels that confine and stabilize Cu+ ion migration pathways. Leveraging this enhanced uniformity, we fabricate a selector-less 16x16 Cu/Ge3.5Te1 CBRAM crossbar array and demonstrate a 4x4 Hopfield associative network capable of learning and recalling binary pattern pairs via fully parallel programming using a half-selection scheme. Successful pattern recall is achieved for up to two stored associations despite the absence of selector elements, establishing a proof-of-concept for selector-free hardware implementations of associative memory. These results highlight the critical role of electrolyte bonding structure in determining memristor uniformity and provide a materials-driven pathway toward scalable, parallel neuromorphic computing systems.

physics.app-ph↗

arXiv2026

A Hardware-aware Hopfield Network with a Nonlinear Memristor Array for Robust Associative Memory with Superlinear Capacity

Associative memory retrieves complete patterns from partial or corrupted inputs and constitutes a primitive form of generative inference. Classical Hopfield networks (CHN) provide a canonical framework for associative memory but suffer from limited memory capacity. Recently, modern Hopfield networks (MHN) were introduced to achieve higher capacity by using explicit pattern-wise storage and neurons with the softmax activation function, which makes the MHN vulnerable to noise and the hardware implementation complicated due to its network size varying with the number of stored patterns. Here, we introduce a hardware-aware Hopfield network (HHN), in which the intrinsic nonlinear current-voltage characteristics of a charge-trap memristor are leveraged to engineer the energy landscape of the HN, increasing the memory capacity. Using a 25 x 25 nonlinear memristor array, we demonstrate reliable reconstruction of corrupted patterns with memory capacity far exceeding the classical limit (K ~ 0.14N, where N is the number of neurons). The HHN preserves Hopfield-type energy-minimization dynamics and remains robust to synaptic conductance noise. Large-scale simulations on high-dimensional image data reveal an empirical memory capacity scaling of K ~ 0.3 x N^1.2 under a fixed synaptic budget. These results establish HHN as a scalable hardware-native architecture for low-power associative memory and generative inference.

cond-mat.dis-nn↗