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Jong-Ching Wu

Publications and source records attributed to Jong-Ching Wu.

6 recordsLinked to original sources

Interpretation of spin-wave modes in Co/Ag nanodot arrays probed by broadband ferromagnetic resonance

We present a detailed investigation of the magnetization dynamics in Co/Ag nanodots, which due to their size can support standing spin-wave (SSW) modes with complex spectral responses. To interpret the experimentally measured broadband vector network analyzer ferromagnetic resonance data, we compare the spectra of the nanoarray structure with those of the unpatterned Co/Ag film of identical thickness, which serves as a baseline for obtaining the general magnetic parameters of the system. Using a novel frequency domain, matrix-free simulation method of the dynamic response, we identify the nature of the excitation modes, which allows us to assess the boundary conditions for the nanodots. We find an excellent agreement between the calculated and experimental values for the frequencies of the fundamental (uniform-like) (011) mode. The existence of an edge-localized mode in the experiment has been confirmed and fits very well with theory and micromagnetic simulations, having the form of a flapping mode at the extrema of the nanodot in one of the in-plane directions. Its frequency is below the fundamental mode's frequency and has been shown to be a consequence of the imaginary wave vector for such localized SSW modes. Higher order SSW modes can be generated from the theory, which allows us to find a probable mode number for the second bulk SSW (201 or 221 or 131), which lies at frequencies above the fundamental mode.

cond-mat.mes-hall

Spin-flop led peculiar behavior of temperature-dependent anomalous Hall effect in Hf/Gd-Fe-Co

Here we investigate the temperature dependence of anomalous Hall effect in Hf/GdFeCo/MgO sheet film and Hall bar device. The magnetic compensation temperature ($T_{comp}$) for the sheet film and device is found to be ~240 K and ~118 K, respectively. In sheet film, spin-flopping is witnessed at a considerably lower field, 0.6 T, close to $T_{comp}$. The AHE hysteresis loops in the sheet film have a single loop whereas in the Hall bar device, hystereses consist of triple loops are observed just above the Tcomp. Moreover, the temperature-dependent anomalous Hall resistance ($R_\mathrm{AHE}$) responds unusually when a perpendicular magnetic field is applied while recording the $R_\mathrm{AHE}$. The zero-field $R_\mathrm{AHE}$ scan suggests the Hall signal generates solely from the FeCo moment. However, the behavior of 3 T-field $R_\mathrm{AHE}$ scan in which the $R_\mathrm{AHE}$ drops close to zero near the $T_{comp}$ seems to be following the net magnetization response of the device, is explained by considering the low field spin-flopping around the compensation temperature. The results presented here give important insight to understand the complex AHE behavior of ferrimagnets for their spintronic applications.

physics.app-ph

Sense current dependent coercivity and magnetization relaxation in Gd-Fe-Co Hall bar

The understanding of the characteristics of a magnetic layer in a different environment is crucial for any spintronics application. Before practical applications, thorough scrutiny of such devices is compulsory. Here we study such a potential Hall device of MgO-capped Hf/GdFeCo bilayer (FeCo-rich) for magnetization relaxation around nucleation fields at different voltage probe line widths and dc sensing currents. The device is characterized by anomalous Hall measurements in transverse and longitudinal Hall geometries for two different probe widths A (5 micrometer) and B (1 micrometer). The coercivities of the Hall loops (\r{ho}xy-H and Rxx-H) drop with increasing the sense current for both the probes. For probe B, the sharp and large drop in coercivity (\r{ho}xy-H loops) at comparatively lower sensing currents is observed, which is attributed to the negligible current shunting and presence of pinning site at B caused by the patterning process. The average domain wall velocities at various sensing currents for probe B are found to be smaller than probe A, from the transverse and longitudinal Hall geometry magnetization relaxation measurements, which agrees with pinning sites and Joule heating effect at probe B. The notch position in the pattern and the longitudinal Hall resistance curve peak shape suggest the domain wall propagation direction from probe B to probe A in the current channel. This study highlights the domain wall propagation at different nucleation fields, sensing currents, and the Hall probe aspect ratios.

cond-mat.mes-hall

Modulation of anisotropic magnetoresistance by anomalous Hall signal and its application to real-time domain wall velocity measurement

We present here a way to modulate the anisotropic magnetoresistance (AMR) by anomalous Hall signal and thus measure the domain wall (DW) motion velocity at near-coercivity. We study the magnetization relaxation at the constant field in the longitudinal (Rxx) Hall geometry. We observed asymmetric Rxx peaks that appear at the DW pinning fields. This unusual magnetoresistance behavior is explained by considering the AMR modulation by the anomalous Hall voltage. In the proposed method, using the magnetization relaxation, the real-time DW velocity measurement is much easier in comparison to the other microscopy methods. Moreover, the additional signal from anomalous Hall voltage makes this technique simpler and sensitive for DW velocity measurements, which can be useful for various spintronic sensing applications.

physics.app-ph

Unusual Field Dependence of Anomalous Hall Effect in Ta/TbFeCo

Experimental studies of anomalous Hall effect are performed for thin filmed Ta/TbFeCo in a wide range of temperatures and magnetic fields up to 3 T. While far from the compensation temperature (TM=277 K) the field dependence has a conventional shape of a single hysteresis loop, just below the compensation point the dependence is anomalous having the shape of a triple hysteresis. To understand this behavior, we experimentally reveal the magnetic phase diagram and theoretically analyze it in terms of spin-reorientation phase transitions. We show that one should expect anomalous hysteresis loops below the compensation point if in the vicinity of it the magnetic anisotropy is dominated by FeCo sublattice due to interaction with Ta.

cond-mat.mtrl-sci

Observation of fluctuation-induced tunneling conduction in micrometer-sized tunnel junctions

Micrometer-sized Al/AlO$_{x}$/Y tunnel junctions were fabricated by the electron-beam lithography technique. The thin ($\approx$ 1.5--2 nm thickness) insulating AlO$_{x}$ layer was grown on top of the Al base electrode by O$_{2}$ glow discharge. The zero-bias conductances $G(T)$ and the current-voltage characteristics of the junctions were measured in a wide temperature range 1.5--300 K\@. In addition to the direct tunneling conduction mechanism observed in low-$G$ junctions, high-$G$ junctions reveal a distinct charge transport process which manifests the thermally fluctuation-induced tunneling conduction (FITC) through short nanoconstrictions. We ascribe the experimental realization of the FITC mechanism to originating from the formations of "hot spots" (incomplete pinholes) in the AlO$_{x}$ layer owing to large junction-barrier interfacial roughness.

cond-mat.mes-hall