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Jong-Guk Choi

Publications and source records attributed to Jong-Guk Choi.

4 recordsLinked to original sources

Reconfigurable field-free spin Hall nano-oscillators enabled by crystallographic anisotropy in epitaxial Co/Pt

Spin Hall nano-oscillators (SHNOs) are nanoscale microwave sources for wireless communication, neuromorphic computing and oscillator-based Ising machines, but conventional devices require a global magnetic bias. Here we replace this bias through crystallographic anisotropy in epitaxial Co/Pt. Growth of hcp Co with its c-axis in the film plane produces an anisotropy field of about 0.36 T and enables field-free auto-oscillations above 10 GHz in nanoconstriction SHNOs. The active current polarity is selected by the remanent magnetization, providing nonvolatile reconfiguration of the oscillation state. Micro-focused Brillouin light scattering confirms that the nonlinear response is confined to the nanoconstriction region. Lithographic control of the angle between the current and anisotropy axes tunes the excitation threshold and drives two spectral branches from separated modes to a dominant single branch, consistent with mutual synchronization. These results establish epitaxial crystallographic anisotropy as a route to reconfigurable field-free spintronic oscillators and oscillator networks.

cond-mat.mes-hall

Spin-Orbital Hall Nano-Oscillators using PtCr/NiFe

The orbital Hall effect provides a promising route for generating angular-momentum currents beyond conventional spin Hall physics. PtCr alloys exhibit unusually large current-induced torques, but the contribution of orbital transport and the ability of these torques to sustain coherent nonlinear magnetization dynamics remain unresolved. Here we demonstrate spin-orbital Hall nano-oscillators by exploiting a homogeneous heavy-metal/light-metal alloy in which orbital Hall currents generated by Cr are converted by Pt into spin currents, producing giant spin-orbit torques. Using PtCr/NiFe heterostructures, the effective torque efficiency increases from ~0.14 in Pt/NiFe to ~0.40 in Pt0.38Cr0.62/NiFe despite substantial Pt dilution, enabling coherent auto-oscillations with the threshold current density reduced from ~ 1.07 x 10^12 to ~ 4.4 x 10^11 A m^-2. First-principles calculations show that Cr alloying suppresses the intrinsic spin Hall conductivity while enhancing the orbital Hall conductivity, and reproduce the observed torque enhancement only when orbital transport is included. Our combined experimental and first-principles results show that alloy engineering enables giant spin-orbit torques through an intrinsic orbital-mediated contribution, enabling coherent auto-oscillations without engineered multilayers and establishing a scalable materials platform for low-power nonlinear spintronic and orbitronic devices.

cond-mat.mes-hall

Phase noise analysis and control of VO$_2$-based relaxation type oscillators

VO$_2$-based relaxation oscillators form a rapidly developing field that finds applications in neuromorphic computing, Ising machines, and numerous signal processing concepts. These oscillators operate in a deeply nonlinear relaxation regime based on rapid phase transitions between insulating and metallic states in the VO$_2$ material. This process is governed by thermal effects, which lead to additional voltage fluctuations and contribute to a considerably wide spectral linewidth in the VO$_2$-based oscillator signal. In this work, we thoroughly study the phase noise in VO$_2$-based relaxation oscillators and demonstrate that the broadening of the generation spectrum linewidth at low oscillation frequencies is caused by an increased susceptibility to thermal fluctuations during the incubation phase. We explore the types of noise affecting oscillator stability and show that synchronization with an external square-wave signal improves the phase noise more effectively than a sinusoidal-shape injection locking signal.

physics.app-ph

Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers

Electric generation of spin current via spin Hall effect is of great interest as it allows an efficient manipulation of magnetization in spintronic devices. Theoretically, spin current can be also created by a temperature gradient, which is known as spin Nernst effect. Here, we report spin Nernst effect-induced transverse magnetoresistance in ferromagnet (FM)/non-magnetic heavy metal (HM) bilayers. We observe that the magnitude of transverse magnetoresistance (i.e., planar Nernst signal) in FM/HM bilayers is significantly modified by HM and its thickness. This strong dependence of transverse magnetoresistance on HM evidences the spin Nernst effect in HM; the generation of thermally-induced spin current in HM and its subsequent reflection at the FM/HM interface. Our analysis of transverse magnetoresistance shows that the spin Nernst angles of W and Pt have the opposite sign to their spin Hall angles. Moreover, our estimate implies that the magnitude of the spin Nernst angle would be comparable to that of the spin Hall angle, suggesting an efficient generation of spin current by the spin Nernst effect.

cond-mat.mtrl-sci