arXiv subjects

Jonne V Koski

Publications and source records attributed to Jonne V Koski.

2 recordsLinked to original sources

arXiv2020

Roadmap for gallium arsenide spin qubits

Gate-defined quantum dots in gallium arsenide (GaAs) have been used extensively for pioneering spin qubit devices due to the relative simplicity of fabrication and favourable electronic properties such as a single conduction band valley, a small effective mass, and stable dopants. GaAs spin qubits are readily produced in many labs and are currently studied for various applications, including entanglement, quantum non-demolition measurements, automatic tuning, multi-dot arrays, coherent exchange coupling, and teleportation. Even while much attention is shifting to other materials, GaAs devices will likely remain a workhorse for proof-of-concept quantum information processing and solid-state experiments.

cond-mat.mes-hall↗

arXiv2018

Scanning Gate Microscopy in a Viscous Electron Fluid

We measure transport through a Ga[Al]As heterostructure at temperatures between 0.1 K and 30 K. Increasing the temperature enhances the electron-electron scattering rate and viscous effects in the two-dimensional electron gas arise. To probe this regime we measure so-called vicinity voltages and use a voltage-biased scanning tip to induce a movable local perturbation. We find that the scanning gate images differentiate reliably between the different regimes of electron transport. Our data are in good agreement with recent theories for interacting electron liquids in the ballistic and viscous regimes stimulated by measurements in graphene. However, the range of temperatures and densities where viscous effects are observable in Ga[Al]As are very distinct from the graphene material system.

cond-mat.mes-hall↗