arXiv subjects

Joonas Isometsä

Publications and source records attributed to Joonas Isometsä.

3 recordsLinked to original sources

arXiv2026

Nanostructuring SiC by sequential plasma oxidation and reactive ion etching

Silicon carbide (SiC) is a highly promising material for the rapidly growing UV detection industry due to its visible-blindness, low dark current, and exceptional thermal and chemical stability. Despite these advantages, the performance of state-of-the-art SiC UV detectors remains limited due to high reflectance losses, even with the use of anti-reflection coatings. Here, we develop a reactive ion etching process for nanostructuring SiC to eliminate the reflectance losses. The process is based on consecutive oxidation and etching cycles. Consequently, a reflectance below 0.5% is achieved from deep UV (200 nm) to close to the SiC cut-off (~360 nm). The nanostructures are effective even at large incident angles as the reflectance remains practically unchanged up to 60 degrees. Furthermore, it is confirmed that the process consumes only ~1 um of SiC and is compatible with Al2O3 masking, thereby facilitating straightforward integration into device fabrication. The developed cyclical etching process could also prove useful for SiC etching in general.

physics.app-ph↗

arXiv2020

Nanostructured germanium with >99 % absorption at 300-1600 nm wavelengths

Near-infrared (NIR) sensors find numerous applications within various industry fields, including optical communications and medical diagnostics. However, the state-of-the-art NIR sensors made of germanium (Ge) suffer from rather poor response, largely due to high reflection from the illuminated device surface. We demonstrate here a method to increase the sensitivity of Ge sensors by implementing nanostructures to the wafer surfaces. The absorbance of nanostructured Ge wafers is measured to be >99 % in the whole UV-VIS-NIR spectrum up to 1600 nm wavelength, which is a significant improvement to bare Ge wafers that reach absorption of only 63 % in maximum. The process is shown to be capable of producing uniform nanostructures covering full 100-mm-diameter substrates as well as wafers with etch mask openings of different sizes and shapes, which demonstrates its applicability to CMOS sensor manufacturing. The results imply that nanostructured Ge has potential to revolutionize the sensitivity of Ge-based sensors.

cond-mat.mtrl-sci↗

arXiv2020

Efficient photon capture on germanium surfaces using industrially feasible nanostructure formation

Nanostructured surfaces are known to provide excellent optical properties for various photonics devices. Fabrication of such nanoscale structures to germanium (Ge) surfaces by metal assisted chemical etching (MACE) is, however, challenging as Ge surface is highly reactive resulting often in micron-level rather than nanoscale structures. Here we show that by properly controlling the process, it is possible to confine the chemical reaction only to the vicinity of the metal nanoparticles and obtain nanostructures also in Ge. Furthermore, it is shown that controlling the density of the nanoparticles, concentration of oxidizing and dissolving agents as well as the etching time plays a crucial role in successful nanostructure formation. We also discuss the impact of high mobility of charge carriers on the chemical reactions taking place on Ge surfaces. As a result we propose a simple one-step MACE process that results in nanoscale structures with less than 10% surface reflectance in the wavelength region between 400 nm and 1600 nm. The method consumes only a small amount of Ge and is thus industrially viable and also applicable to thin Ge layers.

physics.app-ph↗