arXiv subjects

Joost Ridderbos

Publications and source records attributed to Joost Ridderbos.

15 recordsLinked to original sources

arXiv2026

Induced superconductivity in selective-area grown SnTe devices

Topological superconductors are of high interest for applications in topological quantum computation. The required topologically superconducting state can be engineered by proximityinducing superconductivity in a topological insulator. Here, we explore the induced superconductivity in selective-area grown nanowires of the topological crystalline insulator SnTe on a InP substrate, through TEM/EDX and low-temperature electronic transport studies. The observed superconducting behavior likely originates from indium in the substrate diffusing upwards into the SnTe nanowire, forming a thin layer of InxSn1-xTe at the interface between the nanowire and the substrate. InxSn1-xTe is intrinsically superconducting for indium concentrations above 2%, resulting in superconductivity within the heterostructure. Little-Parks oscillations are observed in loop-shaped nanowire networks in an out-of-plane magnetic field. The half-period shift indicative of a topological superconducting state is absent, which is explained by dominant trivial transport channels obscuring any topological signatures.

cond-mat.mes-hall↗

arXiv2025

Time-reversal symmetry breaking in microscopic single-crystal Sr$_2$RuO$_4$ devices

Time-reversal symmetry breaking superconductivity is a quintessential unconventional quantum state. In Josephson junctions, time-reversal symmetry breaking manifests itself in the supercurrent interference pattern as the invariance of the critical current under the reversal of both transport and magnetic field directions, i.e., $I_\text{c+}(H) = I_\text{c-}(-H)$. So far, such systems have been realized in devices where superconductivity is injected into a deliberately constructed weak link medium, usually carefully tuned by external magnetic fields and electrostatic gating. In this work, we report time-reversal symmetry breaking in spontaneously emerging Josephson junctions without intentionally constructed weak links. This is realized in ultra-pure single-crystal microstructures of Sr$_2$RuO$_4$, an unconventional superconductor with a multi-component order parameter. Here, the Josephson effect emerges intrinsically at the superconducting domain wall, where the degenerate states partially overlap. In addition to violating $I_\text{c+}(H) = I_\text{c-}(-H)$, we find a rich variety of exotic transport phenomena, including a supercurrent diode effect present in the entire interference pattern, two-channel critical current oscillations with a period that deviates from $Φ_0$, fractional Shapiro steps, and current-switchable bistable states with highly asymmetric critical currents. Our findings provide direct evidence of TRSB in unstrained Sr$_2$RuO$_4$ and reveal the potential of domain wall Josephson junctions, which can emerge in any superconductor where the pairing symmetry is described by a multi-component order parameter.

cond-mat.supr-con↗

arXiv2025

Quantum transport in SnTe nanowire devices

We report on a variety of quantum transport experiments in SnTe nanowire devices. Research on these particular nanowire devices is relevant because of their topological properties and their potential to distinguish surface states owing to their high surface-to-volume ratio that suppresses the bulk contribution to the conductance. We observe a low-resistance and a high-resistance regime. The highly resistive devices display semiconducting and quantum dot behavior caused by microscopic differences in the fabrication, while devices with low resistance show partial superconductivity when in a hybrid superconductor-nanowire configuration or Fabry-Pérot oscillations. The latter suggests quantum interference in a ballistic transport channel, attributed to the 2D surface states in SnTe. The wide variety of quantum transport phenomena demonstrate SnTe nanowires as a promising platform for diverse follow-up experiments and novel device architectures, including the exploration of topological superconductivity and the development of low-energy spintronic devices.

cond-mat.mes-hall↗

arXiv2023

Coherent control of a few-channel hole type gatemon qubit

Gatemon qubits are the electrically tunable cousins of superconducting transmon qubits. In this work, we demonstrate the full coherent control of a gatemon qubit based on hole carriers in a Ge/Si core/shell nanowire, with the longest coherence times in group IV material gatemons to date. The key to these results is a high-quality Josephson junction obtained in a straightforward and reproducible annealing technique. We demonstrate that the transport through the narrow junctions is dominated by only two quantum channels, with transparencies up to unity. This novel qubit platform holds great promise for quantum information applications, not only because it incorporates technologically relevant materials, but also because it provides new opportunities, like an ultrastrong spin-orbit coupling in the few-channel regime of Josephson junctions.

cond-mat.mes-hall↗

arXiv2023

Performance of high impedance resonators in dirty dielectric environments

High-impedance resonators are a promising contender for realizing long-distance entangling gates between spin qubits. Often, the fabrication of spin qubits relies on the use of gate dielectrics which are detrimental to the quality of the resonator. Here, we investigate loss mechanisms of high-impedance NbTiN resonators in the vicinity of thermally grown SiO\textsubscript{2} and Al\textsubscript{2}O\textsubscript{3} fabricated by atomic layer deposition. We benchmark the resonator performance in elevated magnetic fields and at elevated temperatures and find that the internal quality factors are limited by the coupling between the resonator and two-level systems of the employed oxides. Nonetheless, the internal quality factors of high-impedance resonators exceed $10^3$ in all investigated oxide configurations which implies that the dielectric configuration would not limit the performance of resonators integrated in a spin-qubit device. Because these oxides are commonly used for spin qubit device fabrication, our results allow for straightforward integration of high-impedance resonators into spin-based quantum processors. Hence, these experiments pave the way for large-scale, spin-based quantum computers.

cond-mat.mes-hall↗

arXiv2023

Strong coupling between a microwave photon and a singlet-triplet qubit

Tremendous progress in few-qubit quantum processing has been achieved lately using superconducting resonators coupled to gate voltage defined quantum dots. While the strong coupling regime has been demonstrated recently for odd charge parity flopping mode spin qubits, first attempts towards coupling a resonator to even charge parity singlet-triplet spin qubits have resulted only in weak spin-photon coupling strengths. Here, we integrate a zincblende InAs nanowire double quantum dot with strong spin-orbit interaction in a magnetic-field resilient, high-quality resonator. In contrast to conventional strategies, the quantum confinement is achieved using deterministically grown wurtzite tunnel barriers without resorting to electrical gating. Our experiments on even charge parity states and at large magnetic fields, allow to identify the relevant spin states and to measure the spin decoherence rates and spin-photon coupling strengths. Most importantly, we find an anti-crossing between the resonator mode in the single photon limit and a singlet-triplet qubit with an electron spin-photon coupling strength of $g/2π=139\pm4$ MHz. Combined with the resonator decay rate $κ/2π=19.8\pm0.2$ MHz and the qubit dephasing rate $γ/2π=116\pm7$ MHz, our system achieves the strong coupling regime in which the coherent coupling exceeds qubit and resonator linewidth. These results pave the way towards large-scale quantum system based on singlet-triplet qubits.

cond-mat.mes-hall↗

arXiv2023

AC Josephson effect in a gate-tunable Cd$_3$As$_2$ nanowire superconducting weak link

Three-dimensional topological Dirac semimetals have recently gained significant attention, since they possess exotic quantum states. When constructing Josephson junctions utilizing these materials as the weak link, the fractional ac Josephson effect emerges in the presence of a topological supercurrent contribution. We investigate the ac Josephson effect in a Dirac semimetal Cd$_3$As$_2$ nanowire using two complementary methods: by probing the radiation spectrum and by measuring Shapiro patterns. With both techniques, we find that conventional supercurrent dominates at all investigated doping levels and that any potentially present topological contribution falls below our detection threshold. The inclusion of thermal noise in a resistively and capacitively shunted junction (RCSJ) model allows us to reproduce the microwave characteristics of the junction. With this refinement, we explain how weak superconducting features can be masked and provide a framework to account for elevated electronic temperatures present in realistic experimental scenarios.

cond-mat.supr-con↗

arXiv2021

Phase-dependent microwave response of a graphene Josephson junction

Gate-tunable Josephson junctions embedded in a microwave environment provide a promising platform to in-situ engineer and optimize novel superconducting quantum circuits. The key quantity for the circuit design is the phase-dependent complex admittance of the junction, which can be probed by sensing an rf SQUID with a tank circuit. Here, we investigate a graphene-based Josephson junction as a prototype gate-tunable element enclosed in a SQUID loop that is inductively coupled to a superconducting resonator operating at 3 GHz. With a concise circuit model that describes the dispersive and dissipative response of the coupled system, we extract the phase-dependent junction admittance corrected for self-screening of the SQUID loop. We decompose the admittance into the current-phase relation and the phase-dependent loss and as these quantities are dictated by the spectrum and population dynamics of the supercurrent-carrying Andreev bound states, we gain insight to the underlying microscopic transport mechanisms in the junction. We theoretically reproduce the experimental results by considering a short, diffusive junction model that takes into account the interaction between the Andreev spectrum and the electromagnetic environment, from which we deduce a lifetime of ~17 ps for non-equilibrium populations.

cond-mat.mes-hall↗

arXiv2019

Hard superconducting gap and diffusion-induced superconductors in Ge-Si nanowires

We show a hard induced superconducting gap in a Ge-Si nanowire Josephson transistor up to in-plane magnetic fields of $250$ mT, an important step towards creating and detecting Majorana zero modes in this system. A hard induced gap requires a highly homogeneous tunneling heterointerface between the superconducting contacts and the semiconducting nanowire. This is realized by annealing devices at $180$ $^\circ$C during which aluminium inter-diffuses and replaces the germanium in a section of the nanowire. Next to Al, we find a superconductor with lower critical temperature ($T_\mathrm{C}=0.9$ K) and a higher critical field ($B_\mathrm{C}=0.9-1.2$ T). We can therefore selectively switch either superconductor to the normal state by tuning the temperature and the magnetic field and observe that the additional superconductor induces a proximity supercurrent in the semiconducting part of the nanowire even when the Al is in the normal state. In another device where the diffusion of Al rendered the nanowire completely metallic, a superconductor with a much higher critical temperature ($T_\mathrm{C}=2.9$ K) and critical field ($B_\mathrm{C}=3.4$ T) is found. The small size of diffusion-induced superconductors inside nanowires may be of special interest for applications requiring high magnetic fields in arbitrary direction.

cond-mat.mes-hall↗

arXiv2019

Multiple Andreev reflections and Shapiro steps in a Ge-Si nanowire Josephson junction

We present a Josephson junction based on a Ge-Si core-shell nanowire with transparent superconducting Al contacts, a building block which could be of considerable interest for investigating Majorana bound states, superconducting qubits and Andreev (spin) qubits. We demonstrate the dc Josephson effect in the form of a finite supercurrent through the junction, and establish the ac Josephson effect by showing up to 23 Shapiro steps. We observe multiple Andreev reflections up to the sixth order, indicating that charges can scatter elastically many times inside our junction, and that our interfaces between superconductor and semiconductor are transparent and have low disorder.

cond-mat.mes-hall↗

arXiv2019

Zeeman effect induced 0-$π$ transitions in ballistic Dirac semimetal Josephson junctions

One of the consequences of Cooper pairs having a finite momentum in the interlayer of a Josephson junction, is $π$-junction behavior. The finite momentum can either be due to an exchange field in ferromagnetic Josephson junctions, or due to the Zeeman effect. Here, we report the observation of Zeeman effect induced 0-$π$ transitions in Bi$_{1-x}$Sb$_x$, 3D Dirac semimetal-based Josephson junctions. The large g-factor of the Zeeman effect from a magnetic field applied in the plane of the junction allows tuning of the Josephson junctions from 0- to $π$- regimes. This is revealed by sign changes in the modulation of the critical current by applied magnetic field of an asymmetric superconducting quantum interference device (SQUID). Additionally, we directly measure a non-sinusoidal current-phase relation in the asymmetric SQUID, consistent with models for ballistic Josephson transport.

cond-mat.mes-hall↗

arXiv2018

Josephson effect in a few-hole quantum dot

We use a Ge-Si core-shell nanowire to realise a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field we gain access to two distinct regimes not combined before in a single device: In the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion supercurrent is carried by single-particle levels of a strongly coupled quantum dot operating in the few-hole regime. These results establish Ge-Si nanowires as an important platform for hybrid superconductor-semiconductor physics and Majorana fermions.

cond-mat.mes-hall↗

arXiv2016

Highly tuneable hole quantum dots in Ge-Si core-shell nanowires

We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot configurations prove to be very stable and show excellent control over the electrostatic environment of the dots, making this system a highly versatile platform for spin-based quantum computing.

cond-mat.mes-hall↗

arXiv2016

Anisotropic Pauli spin blockade in hole quantum dots

We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we tune to a regime with visible shell filling in both dots. We observe a Pauli spin blockade and can assign the measured leakage current at low magnetic fields to spin-flip cotunneling, for which we measure a strong anisotropy related to an anisotropic g-factor. At higher magnetic fields we see signatures for leakage current caused by spin-orbit coupling between (1,1)-singlet and (2,0)-triplet states. Taking into account these anisotropic spin-flip mechanisms, we can choose the magnetic field direction with the longest spin lifetime for improved spin-orbit qubits.

cond-mat.mes-hall↗

arXiv2016

Electric-field dependent g-factor anisotropy in Ge-Si core-shell nanowire quantum dots

We present angle-dependent measurements of the effective g-factor g* in a Ge-Si core-shell nanowire quantum dot. g* is found to be maximum when the magnetic field is pointing perpendicular to both the nanowire and the electric field induced by local gates. Alignment of the magnetic field with the electric field reduces g* significantly. g* is almost completely quenched when the magnetic field is aligned with the nanowire axis. These findings confirm recent calculations, where the obtained anisotropy is attributed to a Rashba-type spin-orbit interaction induced by heavy-hole light-hole mixing. In principle, this facilitates manipulation of spin-orbit qubits by means of a continuous high-frequency electric field.

cond-mat.mes-hall↗