arXiv subjects

Jordan A. Katine

Publications and source records attributed to Jordan A. Katine.

16 recordsLinked to original sources

arXiv2026

Octupole-driven spin torque switching of antiferromagnetic tunnel junctions

Magnetic tunnel junctions (MTJs) based on ferromagnets are canonical devices in spintronics, with wide-ranging applications in data storage, computing, and sensing. They simultaneously exhibit mechanisms for electrical detection and control of magnetic order through the tunneling magnetoresistance (TMR) and spin-transfer torque (STT) effects, respectively. It was long assumed that neither of these effects could be sizeable in all-antiferromagnetic tunnel junctions (AATJs), since they exhibit no net magnetization. Recently, however, it was shown that AATJs based on chiral antiferromagnets do exhibit TMR due to their non-relativistic momentum-dependent spin polarization and cluster magnetic octupole moment (CMO), which are manifestations of their spin-split band structure. However, the reciprocal effect, i.e., the antiferromagnetic counterpart of STT, has been assumed non-existent due to the total electric current being spin-neutral. Here, we report nanoscale AATJs exhibiting this reciprocal effect, which we term octupole-driven spin-transfer torque (OTT). We demonstrate current-induced OTT switching of PtMn3|MgO|PtMn3 AATJs, exhibiting a TMR value of 363% at room temperature and switching current densities of the order of 10 MA/cm2. Our theoretical modeling explains the origin of OTT in terms of the imbalance between intra- and inter-sublattice spin currents across the AATJ, and equivalently, in terms of the non-zero net cluster octupole polarization of each PtMn3 layer. This work establishes a new materials platform for antiferromagnetic spintronics and provides a pathway towards deeply scaled magnetic memory and room-temperature terahertz technologies.

cond-mat.mtrl-sci↗

arXiv2025

High-performance and reliable probabilistic Ising machine based on simulated quantum annealing

Probabilistic computing with pbits is emerging as a computational paradigm for machine learning and for facing combinatorial optimization problems (COPs) with the so-called probabilistic Ising machines (PIMs). From a hardware point of view, the key elements that characterize a PIM are the random number generation, the nonlinearity, the network of coupled pbits, and the energy minimization algorithm. Regarding the latter, in this work we show that PIMs using the simulated quantum annealing (SQA) schedule exhibit better performance as compared to simulated annealing and parallel tempering in solving a number of COPs, such as maximum satisfiability problems, planted Ising problem, and travelling salesman problem. Additionally, we design and simulate the architecture of a fully connected CMOS based PIM able to run the SQA algorithm having a spin-update time of 8 ns with a power consumption of 0.22 mW. Our results also show that SQA increases the reliability and the scalability of PIMs by compensating for device variability at an algorithmic level enabling the development of their implementation combining CMOS with different technologies such as spintronics. This work shows that the characteristics of the SQA are hardware agnostic and can be applied in the co-design of any hybrid analog digital Ising machine implementation. Our results open a promising direction for the implementation of a new generation of reliable and scalable PIMs.

cond-mat.mes-hall↗

arXiv2024

Integrated probabilistic computer using voltage-controlled magnetic tunnel junctions as its entropy source

Probabilistic Ising machines (PIMs) provide a path to solving many computationally hard problems more efficiently than deterministic algorithms on von Neumann computers. Stochastic magnetic tunnel junctions (S-MTJs), which are engineered to be thermally unstable, show promise as entropy sources in PIMs. However, scaling up S-MTJ-PIMs is challenging, as it requires fine control of a small magnetic energy barrier across large numbers of devices. In addition, non-spintronic components of S-MTJ-PIMs to date have been primarily realized using general-purpose processors or field-programmable gate arrays. Reaching the ultimate performance of spintronic PIMs, however, requires co-designed application-specific integrated circuits (ASICs), combining CMOS with spintronic entropy sources. Here we demonstrate an ASIC in 130 nm foundry CMOS, which implements integer factorization as a representative hard optimization problem, using PIM-based invertible logic gates realized with 1143 probabilistic bits. The ASIC uses stochastic bit sequences read from an adjacent voltage-controlled (V-) MTJ chip. The V-MTJs are designed to be thermally stable in the absence of voltage, and generate random bits on-demand in response to 10 ns pulses using the voltage-controlled magnetic anisotropy effect. We experimentally demonstrate the chip's functionality and provide projections for designs in advanced nodes, illustrating a path to millions of probabilistic bits on a single CMOS+V-MTJ chip.

physics.app-ph↗

arXiv2022

Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions

The increasing scale of neural networks and their growing application space have produced demand for more energy- and memory-efficient artificial-intelligence-specific hardware. Avenues to mitigate the main issue, the von Neumann bottleneck, include in-memory and near-memory architectures, as well as algorithmic approaches. Here we leverage the low-power and the inherently binary operation of magnetic tunnel junctions (MTJs) to demonstrate neural network hardware inference based on passive arrays of MTJs. In general, transferring a trained network model to hardware for inference is confronted by degradation in performance due to device-to-device variations, write errors, parasitic resistance, and nonidealities in the substrate. To quantify the effect of these hardware realities, we benchmark 300 unique weight matrix solutions of a 2-layer perceptron to classify the Wine dataset for both classification accuracy and write fidelity. Despite device imperfections, we achieve software-equivalent accuracy of up to 95.3 % with proper tuning of network parameters in 15 x 15 MTJ arrays having a range of device sizes. The success of this tuning process shows that new metrics are needed to characterize the performance and quality of networks reproduced in mixed signal hardware.

cs.ET↗

arXiv2020

Ultrathin perpendicular free layers for lowering the switching current in STT-MRAM

The critical current density $J_{c0}$ required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (STT-MRAM) cell is proportional to the product of the damping parameter, saturation magnetization and thickness of the free layer, $αM_S t_F$. Conventional FLs have the structure CoFeB/nonmagnetic spacer/CoFeB. By reducing the spacer thickness, W in our case, and also splitting the single W layer into two layers of sub-monolayer thickness, we have reduced $t_F$ while minimizing $α$ and maximizing $M_S$, ultimately leading to lower $J_{c0}$ while maintaining high thermal stability. Bottom-pinned MRAM cells with device diameter in the range of 55-130 nm were fabricated, and $J_{c0}$ is lowest for the thinnest (1.2 nm) FLs, down to 4 MA/cm$^2$ for 65 nm devices, $\sim$30% lower than 1.7 nm FLs. The thermal stability factor $Δ_{\mathrm{dw}}$, as high as 150 for the smallest device size, was determined using a domain wall reversal model from field switching probability measurements. With high $Δ_{\mathrm{dw}}$ and lowest $J_{c0}$, the thinnest FLs have the highest spin-transfer torque efficiency.

cond-mat.mtrl-sci↗

arXiv2019

Origin of the resistance-area product dependence of spin transfer torque switching in perpendicular magnetic random access memory cells

We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs). Our results show that in addition to spin transfer torque (STT), current induced self-heating and voltage controlled magnetic anisotropy also contribute to switching and can explain the RA dependencies of switching current density and STT efficiency. Our findings suggest that thermal optimization of perpendicular MRAM cells can result in significant reduction of switching currents.

cond-mat.mes-hall↗

arXiv2018

Magnetization reversal driven by low dimensional chaos in a nanoscale ferromagnet

Energy-efficient switching of magnetization is a central problem in nonvolatile magnetic storage and magnetic neuromorphic computing. In the past two decades, several efficient methods of magnetic switching were demonstrated including spin torque, magneto-electric, and microwave-assisted switching mechanisms. Here we report the discovery of a new mechanism giving rise to magnetic switching. We experimentally show that low-dimensional magnetic chaos induced by alternating spin torque can strongly increase the rate of thermally-activated magnetic switching in a nanoscale ferromagnet. This mechanism exhibits a well-pronounced threshold character in spin torque amplitude and its efficiency increases with decreasing spin torque frequency. We present analytical and numerical calculations that quantitatively explain these experimental findings and reveal the key role played by low-dimensional magnetic chaos near saddle equilibria in enhancement of the switching rate. Our work unveils an important interplay between chaos and stochasticity in the energy assisted switching of magnetic nanosystems and paves the way towards improved energy efficiency of spin torque memory and logic.

cond-mat.mes-hall↗

arXiv2018

Spintronic nano-scale harvester of broadband microwave energy

The harvesting of ambient radio-frequency (RF) energy is an attractive and clean way to realize the idea of self-powered electronics. Here we present a design for a microwave energy harvester based on a nanoscale spintronic diode (NSD). This diode contains a magnetic tunnel junction with a canted magnetization of the free layer, and can convert RF energy over the frequency range from 100 MHz to 1.2 GHz into DC electric voltage. An attractive property of the developed NSD is the generation of an almost constant DC voltage in a wide range of frequencies of the external RF signals. We further show that the developed NSD provides sufficient DC voltage to power a low-power nanodevice - a black phosphorus photo-sensor. Our results demonstrate that the developed NSD could pave the way for using spintronic detectors as building blocks for self-powered nano-systems, such as implantable biomedical devices, wireless sensors, and portable electronics.

physics.app-ph↗

arXiv2017

A platform for time-resolved scanning Kerr microscopy in the near-field

Time-resolved scanning Kerr microscopy (TRSKM) is a powerful technique for the investigation of picosecond magnetization dynamics at sub-micron length scales by means of the magneto-optical Kerr effect (MOKE). The spatial resolution of conventional (focused) Kerr microscopy using a microscope objective lens is determined by the optical diffraction limit so that the nanoscale character of the magnetization dynamics is lost. Here we present a platform to overcome this limitation by means of a near-field TRSKM that incorporates an atomic force microscope (AFM) with optical access to a metallic AFM probe with a nanoscale aperture at its tip. We demonstrate the near-field capability of the instrument through the comparison of time-resolved polar Kerr images of magnetization dynamics within a microscale NiFe rectangle acquired using both near-field and focused TRSKM techniques at a wavelength of 800 nm. The flux-closure domain state of the in-plane equilibrium magnetization provided the maximum possible dynamic polar Kerr contrast across the central domain wall, and enabled an assessment of the magneto-optical spatial resolution of each technique. Line profiles extracted from the Kerr images demonstrate that the near-field spatial resolution was enhanced with respect to that of the focused Kerr images. Furthermore, the near-field polar Kerr signal (~1 mdeg) was more than half that of the focused Kerr signal, despite the potential loss of probe light due to internal reflections within the AFM tip. We have confirmed the near-field operation by exploring the influence of the tip-sample separation, and have determined the spatial resolution to be ~550 nm for an aperture with a sub-wavelength diameter of 400 nm. The spatial resolution of the near-field TRSKM was in good agreement with finite element modelling of the aperture...

cond-mat.mtrl-sci↗

arXiv2016

Parametric resonance of magnetization excited by electric field

Manipulation of magnetization by electric field is a central goal of spintronics because it enables energy-efficient operation of spin-based devices. Spin wave devices are promising candidates for low-power information processing but a method for energy-efficient excitation of short-wavelength spin waves has been lacking. Here we show that spin waves in nanoscale magnetic tunnel junctions can be generated via parametric resonance induced by electric field. Parametric excitation of magnetization is a versatile method of short-wavelength spin wave generation, and thus our results pave the way towards energy-efficient nanomagnonic devices.

cond-mat.mes-hall↗

arXiv2014

Giant spin-torque diode sensitivity at low input power in the absence of bias magnetic field

Microwave detectors based on the spin-transfer torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts, which cannot operate at low input power. Here, we demonstrate nanoscale microwave detectors exhibiting record-high detection sensitivity of 75400 mV mW$^{-1}$ at room temperature, without any external bias fields, for input microwave power down to 10 nW. This sensitivity is 20x and 6x larger than state-of-the-art Schottky diode detectors (3800 mV mW$^{-1}$) and existing spintronic diodes with >1000 Oe magnetic bias (12000 mV mW$^{-1}$), respectively. Micromagnetic simulations supported by microwave emission measurements reveal the essential role of the injection locking to achieve this sensitivity performance. The results enable dramatic improvements in the design of low input power microwave detectors, with wide-ranging applications in telecommunications, radars, and smart networks.

cond-mat.mes-hall↗

arXiv2013

Bimodal switching field distributions in all-perpendicular spin-valve nanopillars

Switching field measurements of the free layer element of 75 nm diameter spin-valve nanopillars reveal a bimodal distribution of switching fields at low temperatures (below 100 K). This result is inconsistent with a model of thermal activation over a single perpendicular anisotropy barrier. The correlation between antiparallel to parallel and parallel to antiparallel switching fields increases to nearly 50% at low temperatures. This reflects random fluctuation of the shift of the free layer hysteresis loop between two different magnitudes, which may originate from changes in the dipole field from the polarizing layer. The magnitude of the loop shift changes by 25% and is correlated to transitions of the spin-valve into an antiparallel configuration.

cond-mat.mes-hall↗

arXiv2013

Ultralow-current-density and bias-field-free spin-transfer nano-oscillator

The spin-transfer nano-oscillator (STNO) offers the possibility of using the transfer of spin angular momentum via spin-polarized currents to generate microwave signals. However, at present STNO microwave emission mainly relies on both large drive currents and external magnetic fields. These issues hinder the implementation of STNOs for practical applications in terms of power dissipation and size. Here, we report microwave measurements on STNOs built with MgO-based magnetic tunnel junctions having a planar polarizer and a perpendicular free layer, where microwave emission with large output power, excited at ultralow current densities, and in the absence of any bias magnetic fields is observed. The measured critical current density is over one order of magnitude smaller than previously reported. These results suggest the possibility of improved integration of STNOs with complementary metal-oxide-semiconductor technology, and could represent a new route for the development of the next-generation of on-chip oscillators.

cond-mat.mes-hall↗

arXiv2013

Time Domain Mapping of Spin Torque Oscillator Effective Energy

Stochastic dynamics of spin torque oscillators (STOs) can be described in terms of magnetization drift and diffusion over a current-dependent effective energy surface given by the Fokker-Planck equation. Here we present a method that directly probes this effective energy surface via time-resolved measurements of the microwave voltage generated by a STO. We show that the effective energy approach provides a simple recipe for predicting spectral line widths and line shapes near the generation threshold. Our time domain technique also accurately measures the field-like component of spin torque in a wide range of the voltage bias values.

cond-mat.mes-hall↗

arXiv2011

Asymmetric switching behavior in perpendicularly magnetized spin-valve nanopillars due to the polarizer dipole field

We report the free layer switching field distributions of spin-valve nanopillars with perpendicular magnetization. While the distributions are consistent with a thermal activation model, they show a strong asymmetry between the parallel to antiparallel and the reverse transition, with energy barriers more than 50% higher for the parallel to antiparallel transitions. The inhomogeneous dipolar field from the polarizer is demonstrated to be at the origin of this symmetry breaking. Interestingly, the symmetry is restored for devices with a lithographically defined notch pair removed from the midpoint of the pillar cross-section along the ellipse long axis. These results have important implications for the thermal stability of perpendicular magnetized MRAM bit cells.

cond-mat.mes-hall↗

arXiv2010

Time-resolved detection of spin-transfer-driven ferromagnetic resonance and spin torque measurement in magnetic tunnel junctions

Several experimental techniques have been introduced in recent years in attempts to measure spin transfer torque in magnetic tunnel junctions (MTJs). The dependence of spin torque on bias is important for understanding fundamental spin physics in magnetic devices and for applications. However, previous techniques have provided only indirect measures of the torque and their results to date for the bias dependence are qualitatively and quantitatively inconsistent. Here we demonstrate that spin torque in MTJs can be measured directly by using time-domain techniques to detect resonant magnetic precession in response to an oscillating spin torque. The technique is accurate in the high-bias regime relevant for applications, and because it detects directly small-angle linear-response magnetic dynamics caused by spin torque it is relatively immune to artifacts affecting competing techniques. At high bias we find that the spin torque vector differs markedly from the simple lowest-order Taylor series approximations commonly assumed.

cond-mat.mes-hall↗