arXiv subjects

Jordan Teeter

Publications and source records attributed to Jordan Teeter.

5 recordsLinked to original sources

arXiv2026

Angle-Resolved Cryogenic Brillouin-Mandelstam Spectroscopy of Surface and Bulk Acoustic Phonons in Diamond

We used angle-resolved Brillouin-Mandelstam light-scattering spectroscopy to monitor surface and bulk acoustic phonons in diamond along the <100> and <110> crystallographic directions across a temperature range from 10 K to 300 K. The frequencies and phase velocities were measured for three types of surface acoustic phonons: Rayleigh waves, shear horizontal waves, and high-frequency pseudo-longitudinal waves. All surface acoustic phonons exhibit weak temperature dependence, with the largest observed change of 1.6% across the examined temperature range. The frequencies of all three types of surface acoustic phonons agree with the theoretical values within the experimental uncertainty. Cryogenic surface-acoustic-phonon data are important for diamond-based quantum sensors, surface acoustic wave devices, and other electronic technologies. Knowledge of surface acoustic phonons can also be used for developing accurate models for thermal transport between interfaces.

cond-mat.mtrl-sci↗

arXiv2026

Phonon Signatures of Near-Room-Temperature Phase Transition in Quasi-One-Dimensional Bi4I4 Topological van der Waals Material

The quasi-one-dimensional material Bi4I4 hosts two crystallographically similar polymorphs that realize distinct topological insulating phases separated by a first-order structural transition near room temperature. This transition occurs without a change in space group, arising instead from a subtle rearrangement of chain stacking registry. Polarization-resolved Raman spectroscopy directly resolves this structural-topological phase transition through abrupt, hysteretic modifications of the phonon spectrum. Angle-dependent measurements establish the symmetry of the dominant Raman-active modes and require a complex Raman tensor formalism to account for absorption-induced phase effects. Across the transition, selected phonon modes exhibit discontinuous, reversible shifts in frequency, linewidth, and relative intensity despite the absence of a space-group change. Density functional theory calculations reproduce the direction of the observed phonon renormalizations and confirm their sensitivity to stacking-dependent force constants. These results demonstrate that polarization-resolved Raman spectroscopy can detect subtle stacking-driven structural rearrangements that underlie topological band character, even when global crystallographic symmetry remains unchanged. The obtained results provide valuable insights into the interplay among lattice dynamics, structural distortions, and topological properties in this class of low-dimensional materials, with strong potential for unique functionalities.

cond-mat.mtrl-sci↗

arXiv2025

Quantum Spin Singlet and Classical N\'eel-Ordered Ground States in MoX3 (X = I, Br) Spin-3/2 Dimerized Antiferromagnetic Chain Crystals

We report that MoX3 (X = I, Br) are rare van der Waals materials that exhibit signatures of both quantum spin chains with a spin singlet ground state and classical Neel order. Bulk single crystals grown by chemical vapor transport exhibit classical antiferromagnetic ground states with a transition temperature of ~40 K as revealed by susceptibility and specific heat measurements. Above 40 K, the susceptibilities show the large, broad peaks associated with a quantum spin-singlet ground state and large singlet-triplet gaps of 21 meV and 25 meV. Monte Carlo simulations, density matrix renormalization-group calculations for finite spin-3/2 chains, and density functional theory reproduce the experimental behavior, confirming the interplay between strong one-dimensional intrachain and weak three-dimensional interchain couplings. MoX3 offers a unique platform for exploring quantum magnetism and magnetic excitations at the atomic chain limit, as these materials combine a 1D van der Waals motif, spin chain behavior, and classical interchain order.

cond-mat.str-el↗

arXiv2025

Giant Gate Response of the Charge in an Electron-Lattice Condensate

Efficient electrical capacitive control is important for the next generation of ultra-low-power and ultra-fast electronics and energy-storage devices. Correlated electronic phases offer a powerful route to enhancing field-effect control beyond the limits of conventional capacitive gating. In such systems, modest gate voltages can couple to an order parameter, producing responses far larger than expected from the electrostatics of non-interacting carriers. It was demonstrated that electron-electron interactions, in which the exchange and correlation energies among electrons lower the chemical potential of an electron system as the electron density increases, can significantly increase the effective capacitance over its geometric capacitance value. Here, we show that the electron-lattice or electron-phonon correlations in charge density wave (CDW) condensate can lead to a giant gate response with the corresponding capacitance enhancement. This unusual phenomenon is demonstrated in the quasi-one-dimensional CDW material, where the gate-induced change in CDW charge density exceeds predictions based on geometrical gate capacitance by one to two orders of magnitude. This "giant gating" effect arises from the coupling of the electric field to the CDW electron-lattice condensate, demonstrating a mechanism for massively amplifying gate response via collective electronic behavior. We quantify the effect by determining the quantum capacitance of the CDW charge and by constructing a band diagram for the gated CDW device. The obtained results can lead to an alternative strategy for continuing the downscaling of the transistor feature size in electronic technology.

cond-mat.str-el↗

arXiv2024

Acoustic and Optical Phonon Frequencies and Acoustic Phonon Velocities in Silicon-Doped Aluminum Nitride Thin Films

We report the results of the study of the acoustic and optical phonons in Si-doped AlN thin films grown by metalorganic chemical vapor deposition on sapphire substrates. The Brillouin - Mandelstam and Raman light scattering spectroscopies were used to measure the acoustic and optical phonon frequencies close to the Brillouin zone center. The optical phonon frequencies reveal non-monotonic changes, reflective of the variations in the thin-film strain and dislocation densities with the addition of Si dopant atoms. The acoustic phonon velocity decreases monotonically with increasing Si dopant concentration, reducing by ~300 m/s at the doping level of 3 x 10^19 1/cm3. Knowledge of the acoustic phonon velocities can be used to optimize ultra-wide bandgap semiconductor heterostructures and minimize the thermal boundary resistance of high-power devices.

cond-mat.mtrl-sci↗