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José H. Garcia

Publications and source records attributed to José H. Garcia.

2 recordsLinked to original sources

Strain-Mediated Lattice Reconstruction Enhances Ferromagnetism in Cr2Ge2Te6/WTe2 van der Waals Heterobilayers

Van der Waals (vdW) heterostructures enable tailored electronic and magnetic phases by stacking atomically thin layers with pristine interfaces. Here, we investigate fully 2D Cr2Ge2Te6/WTe2 heterostructures and identify a strong enhancement of ferromagnetism in Cr2Ge2Te6 (CGT). Magnetotransport measurements across multiple devices with WTe2 thicknesses ranging from monolayer to bulk reveal a robust anomalous Hall effect together with a more than twofold increase of the Curie temperature and substantially enhanced coercive fields. Interface microscopy confirms chemically abrupt vdW interfaces with no detectable interdiffusion, while control experiments rule out processing- or stray-field-induced artifacts. Our experiments and theoretical calculations demonstrate that interfacial charge transfer renders CGT conductive and that proximity-induced lattice distortions in CGT enhance exchange and magnetocrystalline anisotropy. These results establish strain-mediated lattice reconstruction as a strategy for engineering high-temperature magnetic order in 2D heterostructures and clarify that modifications within the magnetic layer itself can govern proximity effects in vdW stacks.

cond-mat.mtrl-sci↗

Room temperature spin Hall effect in graphene/MoS$_2$ van der Waals heterostructures

Graphene is an excellent material for long distance spin transport but allows little spin manipulation. Transition metal dichalcogenides imprint their strong spin-orbit coupling into graphene via proximity effect, and it has been predicted that efficient spin-to-charge conversion due to spin Hall and Rashba-Edelstein effects could be achieved. Here, by combining Hall probes with ferromagnetic electrodes, we unambiguously demonstrate experimentally spin Hall effect in graphene induced by MoS$_2$ proximity and for varying temperature up to room temperature. The fact that spin transport and spin Hall effect occur in different parts of the same material gives rise to a hitherto unreported efficiency for the spin-to-charge voltage output. Remarkably for a single graphene/MoS$_2$ heterostructure-based device, we evidence a superimposed spin-to-charge current conversion that can be indistinguishably associated with either the proximity-induced Rashba-Edelstein effect in graphene or the spin Hall effect in MoS$_2$. By comparing our results to theoretical calculations, the latter scenario is found the most plausible one. Our findings pave the way towards the combination of spin information transport and spin-to-charge conversion in two-dimensional materials, opening exciting opportunities in a variety of future spintronic applications.

cond-mat.mes-hall↗