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Joseph S. Friedman

Publications and source records attributed to Joseph S. Friedman.

36 records · Page 2Linked to original sources

Fast Swapping in a Quantum Multiplier Modelled as a Queuing Network

Predicting the optimum SWAP depth of a quantum circuit is useful because it informs the compiler about the amount of necessary optimization. Fast prediction methods will prove essential to the compilation of practical quantum circuits. In this paper, we propose that quantum circuits can be modeled as queuing networks, enabling efficient extraction of the parallelism and duration of SWAP circuits. To provide preliminary substantiation of this approach, we compile a quantum multiplier circuit and use a queuing network model to accurately determine the quantum circuit parallelism and duration. Our method is scalable and has the potential speed and precision necessary for large scale quantum circuit compilation.

quant-ph↗

Analog Seizure Detection for Implanted Responsive Neurostimulation

Epilepsy can be treated with medication, however, $30\%$ of epileptic patients are still drug resistive. Devices like responsive neurostimluation systems are implanted in select patients who may not be amenable to surgical resection. However, state-of-the-art devices suffer from low accuracy and high sensitivity. We propose a novel patient-specific seizure detection system based on naïve Bayesian inference using Müller C-elements. The system improves upon the current leading neurostimulation device, NeuroPace's RNS by implementing analog signal processing for feature extraction, minimizing the power consumption compared to the digital counterpart. Preliminary simulations were performed in MATLAB, demonstrating that through integrating multiple channels and features, up to $98\%$ detection accuracy for individual patients can be achieved. Similarly, power calculations were performed, demonstrating that the system uses $6.5 μW$ per channel, which when compared to the state-of-the-art NeuroPace system would increase battery life by up to $50 \%$.

eess.SP↗

Skyrmion Logic Clocked via Voltage Controlled Magnetic Anisotropy

Magnetic skyrmions are exciting candidates for energy-efficient computing due to their non-volatility, detectability,and mobility. A recent proposal within the paradigm of reversible computing enables large-scale circuits composed ofdirectly-cascaded skyrmion logic gates, but it is limited by the manufacturing difficulty and energy costs associated withthe use of notches for skyrmion synchronization. To overcome these challenges, we therefore propose a skyrmion logicsynchronized via modulation of voltage-controlled magnetic anisotropy (VCMA). In addition to demonstrating theprinciple of VCMA synchronization through micromagnetic simulations, we also quantify the impacts of current den-sity, skyrmion velocity, and anisotropy barrier height on skyrmion motion. Further micromagnetic results demonstratethe feasibility of cascaded logic circuits in which VCMA synchronizers enable clocking and pipelining, illustrating afeasible pathway toward energy-efficient large-scale computing systems based on magnetic skyrmions.

cond-mat.mes-hall↗

Controllable reset behavior in domain wall-magnetic tunnel junction artificial neurons for task-adaptable computation

Neuromorphic computing with spintronic devices has been of interest due to the limitations of CMOS-driven von Neumann computing. Domain wall-magnetic tunnel junction (DW-MTJ) devices have been shown to be able to intrinsically capture biological neuron behavior. Edgy-relaxed behavior, where a frequently firing neuron experiences a lower action potential threshold, may provide additional artificial neuronal functionality when executing repeated tasks. In this study, we demonstrate that this behavior can be implemented in DW-MTJ artificial neurons via three alternative mechanisms: shape anisotropy, magnetic field, and current-driven soft reset. Using micromagnetics and analytical device modeling to classify the Optdigits handwritten digit dataset, we show that edgy-relaxed behavior improves both classification accuracy and classification rate for ordered datasets while sacrificing little to no accuracy for a randomized dataset. This work establishes methods by which artificial spintronic neurons can be flexibly adapted to datasets.

cond-mat.mes-hall↗

Domain Wall Leaky Integrate-and-Fire Neurons with Shape-Based Configurable Activation Functions

Complementary metal oxide semiconductor (CMOS) devices display volatile characteristics, and are not well suited for analog applications such as neuromorphic computing. Spintronic devices, on the other hand, exhibit both non-volatile and analog features, which are well-suited to neuromorphic computing. Consequently, these novel devices are at the forefront of beyond-CMOS artificial intelligence applications. However, a large quantity of these artificial neuromorphic devices still require the use of CMOS, which decreases the efficiency of the system. To resolve this, we have previously proposed a number of artificial neurons and synapses that do not require CMOS for operation. Although these devices are a significant improvement over previous renditions, their ability to enable neural network learning and recognition is limited by their intrinsic activation functions. This work proposes modifications to these spintronic neurons that enable configuration of the activation functions through control of the shape of a magnetic domain wall track. Linear and sigmoidal activation functions are demonstrated in this work, which can be extended through a similar approach to enable a wide variety of activation functions.

cs.NE↗

Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing

There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation. Magnetic tunnel junction (MTJ) memory elements can be used for computation by manipulating a domain wall (DW), a transition region between magnetic domains. But, these devices have suffered from challenges: spin transfer torque (STT) switching of a DW requires high current, and the multiple etch steps needed to create an MTJ pillar on top of a DW track has led to reduced tunnel magnetoresistance (TMR). These issues have limited experimental study of devices and circuits. Here, we study prototypes of three-terminal domain wall-magnetic tunnel junction (DW-MTJ) in-memory computing devices that can address data processing bottlenecks and resolve these challenges by using perpendicular magnetic anisotropy (PMA), spin-orbit torque (SOT) switching, and an optimized lithography process to produce average device tunnel magnetoresistance TMR = 164%, resistance-area product RA = 31 Ω-μm^2, close to the RA of the unpatterned film, and lower switching current density compared to using spin transfer torque. A two-device circuit shows bit propagation between devices. Device initialization variation in switching voltage is shown to be curtailed to 7% by controlling the DW initial position, which we show corresponds to 96% accuracy in a DW-MTJ full adder simulation. These results make strides in using MTJs and DWs for in-memory and neuromorphic computing applications.

cond-mat.mes-hall↗

Threshold Logic with Current-Driven Magnetic Domain Walls

The recent demonstration of current-driven magnetic domain wall logic [Z. Luo et al., Nature 579:214] was based on a three-input logic gate that was identified as a reconfigurable NAND/NOR function. We reinterpret this logic gate as a minority gate within the context of threshold logic, enabling a domain wall threshold logic paradigm in which the device count can be reduced by 80%. Furthermore, by extending the logic gate to more than three inputs of non-equal weight, an 87% reduction in device count can be achieved.

cs.ET↗

Hybrid Pass Transistor Logic with Ambipolar Transistors

In comparison to the conventional complementary pull-up and pull-down logic structure, the pass transistor logic (PTL) family reduces the number of transistors required to perform logic functions, thereby reducing both area and power consumption. However, this logic family requires inter-stage inverters to ensure signal integrity in cascaded logic circuits, and inverters must be used to provide each logical input signal in its complementary form. These inverters and complementary signals increase the device count and significantly degrade overall system efficiency. Dual-gate ambipolar field-effect transistors natively provide a single-transistor XNOR operation and permit highly-efficient and compact circuits due to their ambipolar capabilities. Similar to PTL, logic circuits based on ambipolar field-effect transistors require complementary signals. Therefore, numerous inverters are required, with significant energy and area costs. Ambipolar field-effect transistors are a natural match for PTL, as hybrid ambipolar-PTL circuits can simultaneously use these inverters to satisfy their necessity in both PTL and ambipolar circuits. We therefore propose a new hybrid ambipolar-PTL logic family that exploits the compact logic of PTL and the ambipolar capabilities of ambipolar field-effect transistors. Novel hybrid ambipolar-PTL circuits were designed and simulated in SPICE, demonstrating strong signal integrity along with the efficiency advantages of using the required inverters to simultaneously satisfy the requirements of PTL and ambipolar circuits. In comparison to the ambipolar field-effect transistors in the conventional CMOS logic structure, our hybrid full adder circuit can reduce propagation delay by 47%, energy consumption by 88%, energy-delay product by a factor of 9, and area-energy-delay product by a factor of 20.

cs.ET↗

Reservoir Computing with Planar Nanomagnet Arrays

Reservoir computing is an emerging methodology for neuromorphic computing that is especially well-suited for hardware implementations in size, weight, and power (SWaP) constrained environments. This work proposes a novel hardware implementation of a reservoir computer using a planar nanomagnet array. A small nanomagnet reservoir is demonstrated via micromagnetic simulations to be able to identify simple waveforms with 100% accuracy. Planar nanomagnet reservoirs are a promising new solution to the growing need for dedicated neuromorphic hardware.

cs.NE↗

Unsupervised Competitive Hardware Learning Rule for Spintronic Clustering Architecture

We propose a hardware learning rule for unsupervised clustering within a novel spintronic computing architecture. The proposed approach leverages the three-terminal structure of domain-wall magnetic tunnel junction devices to establish a feedback loop that serves to train such devices when they are used as synapses in a neuromorphic computing architecture.

cs.NE↗

Plasticity-Enhanced Domain-Wall MTJ Neural Networks for Energy-Efficient Online Learning

Machine learning implements backpropagation via abundant training samples. We demonstrate a multi-stage learning system realized by a promising non-volatile memory device, the domain-wall magnetic tunnel junction (DW-MTJ). The system consists of unsupervised (clustering) as well as supervised sub-systems, and generalizes quickly (with few samples). We demonstrate interactions between physical properties of this device and optimal implementation of neuroscience-inspired plasticity learning rules, and highlight performance on a suite of tasks. Our energy analysis confirms the value of the approach, as the learning budget stays below 20 $μJ$ even for large tasks used typically in machine learning.

cs.NE↗

CMOS-Free Multilayer Perceptron Enabled by Four-Terminal MTJ Device

Neuromorphic computing promises revolutionary improvements over conventional systems for applications that process unstructured information. To fully realize this potential, neuromorphic systems should exploit the biomimetic behavior of emerging nanodevices. In particular, exceptional opportunities are provided by the non-volatility and analog capabilities of spintronic devices. While spintronic devices have previously been proposed that emulate neurons and synapses, complementary metal-oxide-semiconductor (CMOS) devices are required to implement multilayer spintronic perceptron crossbars. This work therefore proposes a new spintronic neuron that enables purely spintronic multilayer perceptrons, eliminating the need for CMOS circuitry and simplifying fabrication.

cs.NE↗

Exploiting Dual-Gate Ambipolar CNFETs for Scalable Machine Learning Classification

Ambipolar carbon nanotube based field-effect transistors (AP-CNFETs) exhibit unique electrical characteristics, such as tri-state operation and bi-directionality, enabling systems with complex and reconfigurable computing. In this paper, AP-CNFETs are used to design a mixed-signal machine learning (ML) classifier. The classifier is designed in SPICE with feature size of 15 nm and operates at 250 MHz. The system is demonstrated based on MNIST digit dataset, yielding 90% accuracy and no accuracy degradation as compared with the classification of this dataset in Python. The system also exhibits lower power consumption and smaller physical size as compared with the state-of-the-art CMOS and memristor based mixed-signal classifiers.

cs.ET↗

Skyrmion Logic System for Large-Scale Reversible Computation

Computational reversibility is necessary for quantum computation and inspires the development of computing systems in which information carriers are conserved as they flow through a circuit. While conservative logic provides an exciting vision for reversible computing with no energy dissipation, the large dimensions of information carriers in previous realizations detract from the system efficiency, and nanoscale conservative logic remains elusive. We therefore propose a non-volatile reversible computing system in which the information carriers are magnetic skyrmions, topologically-stable magnetic whirls. These nanoscale quasiparticles interact with one another via the spin-Hall and skyrmion-Hall effects as they propagate through ferromagnetic nanowires structured to form cascaded conservative logic gates. These logic gates can be directly cascaded in large-scale systems that perform complex logic functions, with signal integrity provided by clocked synchronization structures. The feasibility of the proposed system is demonstrated through micromagnetic simulations of Boolean logic gates, a Fredkin gate, and a cascaded full adder. As skyrmions can be transported in a pipelined and non-volatile manner at room temperature without the motion of any physical particles, this skyrmion logic system has the potential to deliver scalable high-speed low-power reversible Boolean and quantum computing.

cond-mat.mes-hall↗

Shape-based Magnetic Domain Wall Drift for an Artificial Spintronic Leaky Integrate-and-Fire Neuron

Spintronic devices based on domain wall (DW) motion through ferromagnetic nanowire tracks have received great interest as components of neuromorphic information processing systems. Previous proposals for spintronic artificial neurons required external stimuli to perform the leaking functionality, one of the three fundamental functions of a leaky integrate-and-fire (LIF) neuron. The use of this external magnetic field or electrical current stimulus results in either a decrease in energy efficiency or an increase in fabrication complexity. In this work, we modify the shape of previously demonstrated three-terminal magnetic tunnel junction neurons to perform the leaking operation without any external stimuli. The trapezoidal structure causes shape-based DW drift, thus intrinsically providing the leaking functionality with no hardware cost. This LIF neuron therefore promises to advance the development of spintronic neural network crossbar arrays.

physics.app-ph↗

Toggle Spin-Orbit Torque MRAM with Perpendicular Magnetic Anisotropy

Spin-orbit torque (SOT) is a promising switching mechanism for magnetic random-access memory (MRAM) as a result of the potential for improved switching speed and energy-efficiency. It is of particular interest to develop an SOT-MRAM device with perpendicular magnetic anisotropy (PMA) in order to leverage the greater density and thermal stability achievable with PMA as opposed to in-plane magnetic anisotropy. However, the orthogonality between SOT and PMA prevents deterministic directional switching without an additional device component that breaks the symmetry, such as an external magnetic field or complex physical structure; not only do these components complicate fabrication, they also are not robust to variations in fabrication and applied switching current. This letter therefore proposes a simple SOT-MRAM structure with PMA in which deterministic toggle switching is achieved without requiring additional device components. Furthermore, this toggle PMA SOT-MRAM is shown to be far more robust than previous approaches for directional PMA SOT-MRAM, with greater than 50% tolerance to applied switching current magnitude. This letter describes the physical structure and toggle switching mechanism, provides micromagnetic simulations demonstrating its feasibility, and evaluates the robustness and tolerance to material parameters to guide the fabrication of optimized devices that will jumpstart the third generation of MRAM.

physics.app-ph↗

Circuit-Level Evaluation of the Generation of Truly Random Bits with Superparamagnetic Tunnel Junctions

Many emerging alternative models of computation require massive numbers of random bits, but their generation at low energy is currently a challenge. The superparamagnetic tunnel junction, a spintronic device based on the same technology as spin torque magnetoresistive random access memory has recently been proposed as a solution, as this device naturally switches between two easy to measure resistance states, due only to thermal noise. Reading the state of the junction naturally provides random bits, without the need of write operations. In this work, we evaluate a circuit solution for reading the state of superparamagnetic tunnel junction. We see that the circuit may induce a small read disturb effect for scaled superparamagnetic tunnel junctions, but this effect is naturally corrected in the whitening process needed to ensure the quality of the generated random bits. These results suggest that superparamagnetic tunnel junctions could generate truly random bits at 20 fJ/bit, including overheads, orders of magnitudes below CMOS-based solutions.

physics.app-ph↗

Low-Energy Truly Random Number Generation with Superparamagnetic Tunnel Junctions for Unconventional Computing

Low-energy random number generation is critical for many emerging computing schemes proposed to complement or replace von Neumann architectures. However, current random number generators are always associated with an energy cost that is prohibitive for these computing schemes. In this paper, we introduce random number bit generation based on specific nanodevices: superparamagnetic tunnel junctions. We experimentally demonstrate high quality random bit generation that represents orders-of-magnitude improvements in energy efficiency compared to current solutions. We show that the random generation speed improves with nanodevice scaling, and investigate the impact of temperature, magnetic field and crosstalk. Finally, we show how alternative computing schemes can be implemented using superparamagentic tunnel junctions as random number generators. These results open the way for fabricating efficient hardware computing devices leveraging stochasticity, and highlight a novel use for emerging nanodevices.

physics.app-ph↗