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Joseph Stitt

Publications and source records attributed to Joseph Stitt.

3 recordsLinked to original sources

SubsurfaceGen: Procedural Generation of Field-Scale Earth Models and Seismic Data

Full waveform inversion (FWI) is the gold standard for subsurface imaging, with applications from carbon sequestration to energy and mineral exploration to earthquake hazard assessment. Machine learning approaches to FWI need field-scale, geologically diverse, and physically realistic training data, but existing resources such as Marmousi, SEAM, and OpenFWI fall short on spatial extent, temporal extent, geological diversity, and physical realism. We address these limitations with SubsurfaceGen, a GPU-accelerated generator for 3D velocity models and seismic data. Along with SubsurfaceGen, we release a paired dataset of 4,276 2D velocity slices, 5 s wavefields, and 8 s shot gathers drawn from 42 realistic, field-scale 3D velocity models, each spanning 10 km x 10 km laterally and 6.19 km deep at 10 m resolution. The dataset spans six geological settings -- four built with SubsurfaceGen and two drawn from prior sources -- relevant for carbon sequestration and hydrocarbon exploration. We use this dataset to evaluate neural operators on wavefield prediction and encoder-decoders on end-to-end velocity inversion, holding out one geological setting for out-of-distribution testing. These experiments surface failure modes at field-scale and demonstrate how SubsurfaceGen and the associated dataset can impact ML-based FWI.

cs.LG

Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the Si-face of SiC [SiC(0001)] is not only highly dependent on thickness uniformity but also on monolayer strain uniformity. Only when both thickness and strain are uniform over a significant fraction (> 40%) of the device active area does the mobility exceed 1000 cm2/V-s. Additionally, we achieve high mobility epitaxial graphene (18,100 cm2/V-s at room temperature) on the C-face of SiC [SiC(000-1)] and show that carrier mobility depends strongly on the graphene layer stacking. These findings provide a means to rapidly estimate carrier mobility and provide a guide to achieve very high mobility in epitaxial graphene. Our results suggest that ultra-high mobilities (>50,000 cm2/V-s) are achievable via the controlled formation of uniform, rotationally faulted epitaxial graphene.

cond-mat.mtrl-sci

Three-Dimensional Grain Boundary Spectroscopy in Transparent High Power Ceramic Laser Materials

Using confocal Raman and fluorescence spectroscopic imaging in 3-dimensions, we show direct evidence for Nd3+-Nd3+ interactions across grain boundaries (GBs) in Nd3+:YAG laser ceramics. It is clearly shown that Nd3+ segregation takes place at GBs leading to self-fluorescence quenching which affects a volume fraction as high as 20%. In addition, we show a clear trend of increasing spatial inhomogeneities in Nd3+ concentration when the doping levels exceeds 3 at%, which is not detected by standard spectrometry techniques. These results could point the way to further improvements in what is already an impressive class of ceramic laser materials.

cond-mat.mtrl-sci