arXiv subjects

Joseph W. Bennett

Publications and source records attributed to Joseph W. Bennett.

12 recordsLinked to original sources

arXiv2026

Combinatorial Survey of Structural Phase Distribution and Magnetism in Fe-Ge-Te Composition-spread Thin Film Libraries

Recently, magnetic 2-dimensional (2D) van der Waals (vdW) materials have garnered tremendous attention. The vdW ferromagnet Fe5Ge1Te2 has a Curie temperature Tc of ~ 270 K, which is tailorable by tuning the stoichiometry and the Fe deficiency to reach room temperature. To explore the expanded compositional space, we implemented combinatorial synthesis and high-throughput characterization to investigate the structural phase distribution and ferromagnetism of a Fe-Ge-Te thin film library. The library was prepared by magnetron co-sputtering followed by annealing in vacuum or in an inert environment. Composition and structural phase distribution of the 177 pads in the library were characterized using high-throughput wavelength dispersive spectroscopy (WDS), X-ray diffraction (XRD), and two-point probe resistance measurements. We leverage unsupervised machine learning to cluster the XRD dataset into groups of compositions with similar structural phases, and further study the ferromagnetic properties via SQUID magnetometry and X-ray magnetic circular dichroism (XMCD) across different clusters. The results are compared against magnetization and structural models calculated using DFT. Our results demonstrate that the hexagonal crystal structure is a critical prerequisite for ferromagnetism in this system, and that unexplored materials adopting this structure can be efficiently identified as possible ferromagnetic materials using our high-throughput, ML-assisted framework. This workflow based on the combinatorial strategy allows us to rapidly capture the composition-structure-magnetic property map across a broad compositional landscape of novel magnetic materials.

cond-mat.mtrl-sci↗

arXiv2017

Antiferroelectric topological insulators in orthorhombic $A$MgBi compounds ($A=$ Li, Na, K)

We introduce antiferroelectric topological insulators as a new class of functional materials in which an electric field can be used to control topological order and induce topological phase transitions. Using first principles methods, we predict that several alkali-MgBi orthorhombic members of an $ABC$ family of compounds are antiferroelectric topological insulators. We also show that epitaxial strain and hydrostatic pressure can be used to tune the topological order and the band gap of these $ABC$ compounds. Antiferroelectric topological insulators could enable precise control of topology using electric fields, enhancing the applicability of topological materials in electronics and spintronics.

cond-mat.mtrl-sci↗

arXiv2014

The Structural Diversity of ABS3 Compounds with d0 Electronic Configuration for the B-cation

We use first-principles density functional theory (DFT) within the local density approx- imation (LDA) to ascertain the ground state structure of real and theoretical compounds with the formula ABS3 (A = K, Rb, Cs, Ca, Sr, Ba, Tl, Sn, Pb, and Bi; and B = Sc, Y, Ti, Zr, V, and Nb) under the constraint that B must have a d0 electronic configuration. Our findings indicate that none of these AB combinations prefer a perovskite ground state with corner-sharing BS6 octahedra, but that they prefer phases with either edge- or face-sharing motifs. Further, a simple two-dimensional structure field map created from A and B ionic radii provides a neat demarcation between combinations preferring face-sharing versus edge- sharing phases for most of these combinations. We then show that by modifying the common Goldschmidt tolerance factor with a multiplicative term based on the electronegativity dif- ference between A and S, the demarcation between predicted edge-sharing and face-sharing ground state phases is enhanced. We also demonstrate that, by calculating the free energy contribution of phonons, some of these compounds may assume multiple phases as synthesis temperatures are altered, or as ambient temperatures rise or fall.

cond-mat.mtrl-sci↗

arXiv2014

Density Functional Theory Study Of Hypothetical PbTiO3-Based Oxysulfides

Using density functional theory (DFT) within the local density approximation (LDA), we calculate the physical and electronic properties of PbTiO3 (PTO) and a series of hypothetical compounds PbTiO3-xSx x = 0.2, 0.25, 0.33, 0.5, 1, 2, and 3 arranged in the corner-sharing cubic perovskite structure. We determine that replacing the apical oxygen atom in the PTO tetragonal unit cell with a sulfur atom reduces the x = 0 LDA calculated band gap of 1.47 eV to 0.43 - 0.67 eV for x = 0.2 - 1 and increases the polarization. PBE0 and GW methods predict that the hypothetical compositions x = 0.2 to x = 2 will have band gaps in the visible range. For all values of x < 2, the oxysulfide perovskite retains the tetragonal phase of PbTiO3, and the a-lattice parameter remains within 2.5% of the oxide. Thermodynamic analysis indicates that chemical routes using high temperature gas, such as H2S and CS2, can be used to substitute O for S in PTO for the compositions x = 0.2 - 0.5.

cond-mat.mtrl-sci↗

arXiv2013

Pseudopotentials for high-throughput DFT calculations

The increasing use of high-throughput density-functional theory (DFT) calculations in the computational design and optimization of materials requires the availability of a comprehensive set of soft and transferable pseudopotentials. Here we present design criteria and testing results for a new open-source "GBRV" ultrasoft pseudopotential library that has been optimized for use in high-throughput DFT calculations. We benchmark the GBRV potentials, as well as two other pseudopotential sets available in the literature, to all-electron calculations in order to validate their accuracy. The results allow us to draw conclusions about the accuracy of modern pseudopotentials in a variety of chemical environments.

cond-mat.mtrl-sci↗

arXiv2012

Orthorhombic $ABC$ semiconductors as antiferroelectrics

We use a first-principles rational-design approach to identify a previously-unrecognized class of antiferroelectric materials in the $Pnma$ MgSrSi structure type. The MgSrSi structure type can be described in terms of antipolar distortions of the nonpolar $P6_{3}/mmc$ ZrBeSi structure type, and we find many members of this structure type are close in energy to the related polar $P6_{3}mc$ LiGaGe structure type, which includes many members we predict to be ferroelectric. We highlight known $ABC$ combinations in which this energy difference is comparable to the antiferroelectric-ferroelectric switching barrier of PbZrO$_{3}$. We calculate structural parameters and relative energies for all three structure types, both for reported and as-yet hypothetical representatives of this class. Our results provide guidance for the experimental realization and further investigation of high-performance materials suitable for practical applications.

cond-mat.mtrl-sci↗

arXiv2012

Integration of first-principles methods and crystallographic database searches for new ferroelectrics: Strategies and explorations

In this concept paper, the development of strategies for the integration of first-principles methods with crystallographic database mining for the discovery and design of novel ferroelectric materials is discussed, drawing on the results and experience derived from exploratory investigations on three different systems: (1) the double perovskite Sr(Sb$_{1/2}$Mn$_{1/2}$)O$_3$ as a candidate semiconducting ferroelectric; (2) polar derivatives of schafarzikite $M$Sb$_2$O$_4$; and (3) ferroelectric semiconductors with formula $M_2$P$_2$(S,Se)$_6$. A variety of avenues for further research and investigation are suggested, including automated structure type classification, low-symmetry improper ferroelectrics, and high-throughput first-principles searches for additional representatives of structural families with desirable functional properties.

cond-mat.mtrl-sci↗

arXiv2012

Half-Heusler semiconductors as piezoelectrics

One of the central challenges in materials science is the design of functional and multifunctional materials, in which large responses are produced by applied fields and stresses. A rapidly developing paradigm for the rational design of such materials is based on the first-principles study of a large materials family, the perovskite oxides being the prototypical case. Specifically, first-principles calculations of structure and properties are used to explore the microscopic origins of the functional properties of interest and to search a large space of equilibrium and metastable phases to identify promising candidate systems. In this paper, we use a first-principles rational-design approach to demonstrate semiconducting half-Heusler compounds as a previously-unrecognized class of piezoelectric materials, and to provide guidance for the experimental realization and further investigation of high-performance materials suitable for practical applications.

cond-mat.mtrl-sci↗

arXiv2012

Hexagonal $ABC$ as semiconducting ferroelectrics

We use a first-principles rational-design approach to identify a previously-unrecognized class of ferroelectric materials in the $P63mc$ LiGaGe structure type. We calculate structural parameters, polarization and ferroelectric well depths both for reported and as-yet hypothetical representatives of this class. Our results provide guidance for the experimental realization and further investigation of high-performance materials suitable for practical applications.

cond-mat.mtrl-sci↗

arXiv2011

Post density functional theoretical studies of highly polar semiconductive Pb(Ti$_{1-x}$Ni$_{x}$)O$_{3-x}$ solid solutions: The effects of cation arrangement on band gap

We use a combination of conventional density functional theory (DFT) and post-DFT methods, including the local density approximation plus Hubbard $U$ (LDA+$U$), PBE0, and self-consistent $GW$ to study the electronic properties of Ni-substituted PbTiO$_{3}$ (Ni-PTO) solid solutions. We find that LDA calculations yield unreasonable band structures, especially for Ni-PTO solid solutions that contain an uninterrupted NiO$_{2}$ layer. Accurate treatment of localized states in transition-metal oxides like Ni-PTO requires post-DFT methods. $B$-site Ni/Ti cation ordering is also investigated. The $B$-site cation arrangement alters the bonding between Ni and O, and therefore strongly affects the band gap ($E_{\rm g}$) of Ni-PTO. We predict that Ni-PTO solid solutions should have a direct band gap in the visible light energy range, with polarization similar to the parent PbTiO$_{3}$. This combination of properties make Ni-PTO solid solutions promising candidate materials for solar energy conversion devices.

cond-mat.mtrl-sci↗

arXiv2007

First-principles modeling of BaCeO_{3}: structure and stabilization of O vacancies by Pd-doping

We use first-principles density functional theory (DFT) calculations to investigate the ground state structures of both BaCeO_{3} (BC) and Pd-doped BC (BCP). The relaxed structures match closely with recent experimental scattering studies, and also provide a local picture of how the BC perovskite lattice accommodates Pd. Both stoichiometric and oxygen-deficient materials are considered, and structures with an O vacancy adjacent to each Pd are predicted to be favored. The oxidation state of Pd in each doped structure is investigated through a structural analysis, the results of which are supported by an orbital-resolved projected density of states. The vacancy stabilization by Pd in BCP is explained through redox chemistry and lattice strain relief.

cond-mat.mtrl-sci↗

arXiv2006

The Effect of Symmetry Lowering on the Dielectric Response of $BaZrO_3$

We use first-principles density functional theory calculations to investigate the dielectric response of BaZrO$_3$ perovskite. A previous study [Arkbarzadeh {\em et al.} Phys. Rev. B {\bf 72}, 205104 (2005)] reported a disagreement between experimental and theoretical low temperature dielectric constant $ε$ for the high symmetry BaZrO$_3$ structure. We show that a fully relaxed 40-atom BaZrO$_3$ structure exhibits O$_6$ octahedral tilting, and $ε$ that agrees with experiment. The change in $ε$ from high-symmetry to low-symmetry structure is due to increased phonon frequencies as well as decreased mode effective charges.

cond-mat.mtrl-sci↗