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Joshua B. Edel

Publications and source records attributed to Joshua B. Edel.

4 recordsLinked to original sources

Quantum tunnelling-integrated optoplasmonic nanotrap enables conductance visualisation of individual proteins

Biological electron transfer (ET) relies on quantum mechanical tunnelling through a dynamically folded protein. Yet, the spatiotemporal coupling between structural fluctuations and electron flux remains poorly understood, largely due to limitations in existing experimental techniques, such as ensemble averaging and non-physiological operating conditions. Here, we introduce a quantum tunnelling-integrated optoplasmonic nanotrap (QTOP-trap), an optoelectronic platform that combines plasmonic optical trapping with real-time quantum tunnelling measurements. This label-free approach enables single-molecule resolution of protein conductance in physiological electrolytes, achieving sub-3 nm spatial precision and 10-{\mu}s temporal resolution. By synchronising optoelectronic measurements, QTOP-trap resolves protein-specific conductance signatures and directly correlates tertiary structure dynamics with conductance using a "protein switch" strategy. This methodology establishes a universal framework for dissecting non-equilibrium ET mechanisms in individual conformational-active proteins, with broad implications for bioenergetics research and biomimetic quantum device design.

physics.bio-ph

Ultrafast Broadband Strong-Field Tunnelling in Asymmetric Nanogaps for Time-Resolved Nanoscopy

Femtosecond-fast and nanometre-size pulses of electrons are emerging as unique probes for ultrafast dynamics at the nanoscale. Presently, such pulses are achievable only in highly sophisticated ultrafast electron microscopes or equally complex setups involving few-cycle-pulsed lasers with stable carrier-envelope phase (CEP) and nanotip probes. Here, we show that the generation of femtosecond pulses of nanoscale tunnelling electrons can be achieved in any ultrafast optical laboratory, using any (deep-UV to mid-IR) femtosecond laser in combination with photosensitive asymmetric nanogap (PAN) diodes fabricated via easy-to-scale adhesion lithography. The dominant mechanism producing tunnelling electrons in PANs is strong-field emission, which is easily achievable without CEP locking or external bias voltage. We employ PANs to demonstrate ultrafast nanoscopy of metal-halide perovskite quantum dots immobilised inside a 10-nm Al/Au nanogap and to characterise laser pulses across the entire optical region (266-6700 nm). Short electron pulses in PANs open the way towards scalable on-chip femtosecond electron measurements and novel design approaches for integrated ultrafast sensing nanodevices.

physics.optics

Localised Solid-State Nanopore Fabrication via Controlled Breakdown using On-Chip Electrodes

Controlled breakdown has recently emerged as a highly accessible technique to fabricate solid-state nanopores. However, in its most common form, controlled breakdown creates a single nanopore at an arbitrary location in the membrane. Here, we introduce a new strategy whereby breakdown is performed by applying the electric field between an on-chip electrode and an electrolyte solution in contact with the opposite side of the membrane. We demonstrate two advantages of this method. First, we can independently fabricate multiple nanopores at given positions in the membrane by localising the applied field to the electrode. Second, we show we can create nanopores that are self-aligned with complementary nanoelectrodes by applying voltages to the on-chip electrodes to locally heat the membrane during controlled breakdown. This new controlled breakdown method provides a path towards the affordable, rapid, and automatable fabrication of arrays of nanopores self-aligned with complementary on-chip nanostructures.

physics.chem-ph

Understanding Electrical Conduction and Nanopore Formation During Controlled Breakdown

Controlled breakdown has recently emerged as a highly appealing technique to fabricate solid-state nanopores for a wide range of biosensing applications. This technique relies on applying an electric field of approximately 0.6-1 V/nm across the membrane to induce a current, and eventually, breakdown of the dielectric. However, a detailed description of how electrical conduction through the dielectric occurs during controlled breakdown has not yet been reported. Here, we study electrical conduction and nanopore formation in SiN$_x$ membranes during controlled breakdown. We show that depending on the membrane stoichiometry, electrical conduction is limited by either oxidation reactions that must occur at the membrane-electrolyte interface (Si-rich SiN$_x$), or electron transport across the dielectric (stoichiometric Si$_3$N$_4$). We provide several important implications resulting from understanding this process which will aid in further developing controlled breakdown in the coming years, particularly for extending this technique to integrate nanopores with on-chip nanostructures.

physics.chem-ph