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Joshua Bader

Publications and source records attributed to Joshua Bader.

5 recordsLinked to original sources

Room temperature Purcell enhanced single erbium ions in silicon-carbide-on-insulator microring resonators

Spin-carrying single-photon emitters operating in the telecommunication C-band (1530-1565nm) are prime candidates for integrated spin-photon interfaces, offering seamless compatibility with existing fiber-optic infrastructure, an essential component for future quantum networks. In this context, erbium-dopants ($\text{Er}^{3+}$) are particularly compelling due to their exceptional emitter properties, including small spectral diffusion and long spin coherence times. However, their low C-band photon-emission rate and operation at cryogenic temperatures has limited the realization of this technology. In this work, we demonstrate fully integrated single-photon emission from an ion implanted $\text{Er}^{3+}$-embedded into a 4H-silicon-carbide-on-insulator (4H-SiCOI) microring resonator operating at room temperature. By optimizing the mode overlap between the resonator and the $\text{Er}^{3+}$-defect, we achieved a $\sim$70$\times$ Purcell enhancement and recorded small spectral diffusion of $\sim$54 MHz. We further characterize the $\text{Er}^{3+}$ single photon emission via photon correlation g$^{(2)}$-histograms and investigate its performance under varying magnetic-field, demonstrating Zeeman splitting on single emitters.

physics.optics

Fano-Like Resonances in Coupled Sagnac Interferometers Formed by a Self-Coupled Waveguide

We demonstrate Fano-like resonances in silicon-on-insulator (SOI) nanowire-based coupled Sagnac interferometers (SIs) formed by a self-coupled waveguide. By adjusting the reflectivity of the two SIs and coupling strength between them, we tailor coherent mode interference to achieve high-performance optical analogues of Fano resonance. The device is theoretically analyzed and experimentally fabricated on a SOI platform. Theoretical analysis predicts periodic Fano-like resonances with a high extinction ratio and a steep slope rate, arising from strong coherent optical mode interference within a compact resonator comprising two SIs and a connected feedback waveguide. Experimental results align with the theoretical model, validating the expected resonance behavior and confirming the effectiveness of the design. These findings underscore the potential of compact coupled SIs for generating Fano-like resonances, enabling broader applications in integrated photonics.

physics.optics

Narrow magneto-optical transitions in Erbium implanted silicon carbide-on-insulator

Solid state spin photon interfaces operating in the near telecom and telecom bands are a key resource for long distance quantum communication and scalable quantum networks. However, their optical transitions often suffer from spectral diffusion that hampers the generation of coherent spin photon entanglement. Here we demonstrate narrow magneto-optical transitions of erbium dopants implanted into thin film silicon carbide (SiC)-on-insulator, a viable platform for industrially scalable quantum networks. Using high-resolution resonant spectroscopy and spectral hole burning at cryogenic temperatures, we reveal sub megahertz homogeneous linewidths and identify two lattice sites that best stabilise the emitters. We further characterise their optical lifetimes and magneto-optical response, establishing erbium doped SiC-on-insulator as a robust and scalable platform for on-chip quantum networks.

cond-mat.mtrl-sci

Integration of $\text{Er}^{3+}$-emitters in silicon-on-insulator nanodisks metasurface

Erbium ($\text{Er}^{3+}$) emitters are relevant for optical applications due to their narrow emission line directly in the telecom C-band due to the ${}^\text{4}\text{I}_{\text{13/2}}$ $\rightarrow$ ${}^\text{4}\text{I}_{\text{15/2}}$ transition at 1.54 $\mu$m. Additionally they are promising candidates for future quantum technologies when embedded in thin-film silicon-on-insulator (SOI) to achieve fabrication scalability and CMOS compatibility. In this paper we integrate $\text{Er}^{3+}$ emitters in SOI metasurfaces made of closely spaced array of nanodisks, to study their spontaneous emission via room and cryogenic temperature confocal microscopy, off-resonance and in-resonance photoluminescence excitation at room temperature and time resolved spectroscopy. This work demonstrates the possibility to adopt CMOS-compatible and fabrication scalable metasurfaces for controlling and improving the collection efficiency of the spontaneous emission from the $\text{Er}^{3+}$ transition in SOI and could be adopted in similar technologically advanced materials.

physics.optics

Photo-luminescence properties of ion implanted Er3+-defects in 4H-SiCOI towards integrated quantum photonics

Colour centres hosted in solid-state materials such as silicon carbide and diamond are promising candidates for integration into chip-scale quantum systems. Specifically, the incorporation of these colour centres within photonic integrated circuits may enable precise control over their inherent photo-physical properties through strong light-matter interaction. Here, we investigate ion-implanted erbium ($\text{Er}^{3+}$) defects embedded in thin-film 4H-silicon-carbide-on-insulator (4H-SiCOI). Optimized implantation conditions and thermal annealing processes designed to enhance the emission characteristics of the $\text{Er}^{3+}$-defect are reported. By examining key properties such as photoluminescence intensity, optical lifetime, and polarization, we present an analysis of ensemble $\text{Er}^{3+}$-defects within 4H-SiCOI, providing insights into their potential for future quantum applications.

physics.optics