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Joshua Mutch

Publications and source records attributed to Joshua Mutch.

9 recordsLinked to original sources

Continuously tunable uniaxial strain control of van der Waals heterostructure devices

Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based \textit{in situ} uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to $-0.15\%$ at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures, and can be easily extended to include additional characterization techniques.

physics.ins-det

Fourier-based methods for removing mesh anomalies from angle resolved photoemission spectra

Recent improvements to spatial resolution in angle-resolved photo-emission spectroscopy (ARPES) have made it common to perform measurements with a very brief dwell time, for the purpose of mapping the spectral function over large surface regions. However, rapid measurement modalities can suffer a grid-like intensity modulation due to a wire mesh that is typically placed in front of the ARPES detector to block stray electrons. Here, we explore Fourier-based methods that can effectively remove this artifact, and improve the quality of ARPES images obtained in rapid scanning modes. An open source software package is provided containing implementations of demonstrated algorithms.

cond-mat.mtrl-sci

The transport-structural correspondence across the nematic phase transition probed by elasto-x-ray diffraction

Electronic nematicity in iron pnictide materials is coupled to both the lattice and the conducting electrons, which allows both structural and transport observables to probe nematic fluctuations and the order parameter. Here we combine simultaneous transport and x-ray diffraction measurements with in-situ tunable strain (elasto-XRD) to measure the temperature dependence of the shear modulus and elastoresistivity above the nematic transition and the spontaneous orthorhombicity and resistivity anisotropy below the nematic transition, all within a single sample of $Ba(Fe_{0.96}Co_{0.04})_{2} As_{2}$. The ratio of transport to structural quantities is nearly temperature-independent over a 74 K range and agrees between the ordered and disordered phases. These results show that elasto-XRD is a powerful technique to probe the nemato-elastic and nemato-transport couplings, which have important implications to the nearby superconductivity. It also enables the measurement in the large strain limit, where the breakdown of mean field description reveals the intertwined nature of nematicity.

cond-mat.str-el

Apparatus Design for Measuring of the Strain Dependence of the Seebeck Coefficient of Single Crystals

We present the design and construction of an apparatus that measures the Seebeck coefficient of single crystals under in-situ tunable strain at cryogenic temperatures. A home-built three piezostack apparatus applies uni-axial stress to a single crystalline sample and modulates anisotropic strain up to 0.7%. An alternating heater system and cernox sensor thermometry measures the Seebeck coefficient along the uniaxial stress direction. To demonstrate the efficacy of this apparatus, we applied uniaxial stress to detwin single crystals of BaFe2As2 in the orthorhombic phase. The obtained Seebeck coefficient anisotropy is in good agreement with previous measurements using a mechanical clamp.

cond-mat.str-el

Bismuth-doping Alters Structural Phase Transitions in Methylammonium Lead Tribromide Single Crystals

We study the effects of bismuth doping on the crystal structure and phase transitions in single crystals of the perovskite semiconductor methylammonium lead tribromide, MAPbBr3. By measuring temperature-dependent specific heat capacity (Cp) we find that, as Bi doping increases, the phase transition assigned to the cubic to tetragonal phase boundary decreases in temperature. Furthermore, after doping we observe one phase transition between 135 and 155 K, in contrast to two transitions observed in the undoped single crystal. These results appear strikingly similar to previously reported effects of mechanical pressure on perovskite crystal structure. Using X-ray diffraction, we show that the lattice constant decreases as Bi is incorporated into the crystal, as predicted by density functional theory (DFT). We propose that bismuth substitutional doping on the lead site is dominant, resulting in BiPb+ centers which induce compressive chemical strain that alters the crystalline phase transitions.

cond-mat.mtrl-sci

Determination of the spin axis in quantum spin Hall insulator monolayer WTe2

Evidence for the quantum spin Hall (QSH) effect has been reported in several experimental systems in the form of approximately quantized edge conductance. However, the most fundamental feature of the QSH effect, spin-momentum locking in the edge channels, has never been demonstrated experimentally. Here, we report clear evidence for spin-momentum locking in the edge channels of monolayer WTe2, thought to be a two-dimensional topological insulator (2D TI). We observe that the edge conductance is controlled by the component of an applied magnetic field perpendicular to a particular axis, which we identify as the spin axis. The axis is the same for all edges, situated in the mirror plane perpendicular to the tungsten chains at 40$\pm$2° to the layer normal, implying that the spin-orbit coupling is inherited from the bulk band structure. We show that this finding is consistent with theory if the band-edge orbitals are taken to have like parity. We conclude that this parity assignment is correct and that both edge states and bulk bands in monolayer WTe2 share the same simple spin structure. Combined with other known features of the edge states this establishes spin-momentum locking, and therefore that monolayer WTe2 is truly a natural 2D TI.

cond-mat.mes-hall

Abrupt switching of the anomalous Hall effect by field-rotation in nonmagnetic ZrTe5

The Hall effect arises when time reversal symmetry is broken by either intrinsic magnetism or an external magnetic field. The latter contribution dominates in non-magnetic materials, in which the angular dependence of the Hall effect is typically a smooth cosine function because only the out-of-plane projection of the field generates the in-plane transverse motion of electrons. Here, we report the observation of an abrupt switching of the Hall effect by field rotation in a non-magnetic material, ZrTe5. The angular dependence of the Hall resistivity approaches a signum function, persisting down to an extremely low field of 0.03 T. By varying the carrier density of ZrTe5 over three orders of magnitude, we show that this singular behavior is due to the anomalous Hall effect generated by the ultra-dilute massive Dirac carriers in the quantum limit of Pauli paramagnetism when the Zeeman energy exceeds the Fermi energy. Our results elucidate the origin of the anomalous Hall effect in ZrTe5, arising owing to the spin-polarized massive Dirac electrons rather than the separation of Weyl nodes.

cond-mat.mes-hall

Drastic suppression of superconducting $T_{c}$ by anisotropic strain near a nematic quantum critical point

High temperature superconductivity emerges in the vicinity of competing strongly correlated phases. In the iron-based superconductor $Ba(Fe_{1-x}Co_{x})_{2}As_{2}$, the superconducting state shares the composition-temperature phase diagram with an electronic nematic phase and an antiferromagnetic phase that break the crystalline rotational symmetry. Symmetry considerations suggest that anisotropic strain can enhance these competing phases and thus suppress the superconductivity. Here we study the effect of anisotropic strain on the superconducting transition in single crystals of $Ba(Fe_{1-x}Co_{x})_{2}As_{2}$ through electrical transport, magnetic susceptibility, and x-ray diffraction measurements. We find that in the underdoped and near-optimally doped regions of the phase diagram, the superconducting critical temperature is rapidly suppressed by both compressive and tensile stress, and in the underdoped case this suppression is enough to induce a strain-tuned superconductor to metal quantum phase transition.

cond-mat.supr-con

Evidence for a strain tuned topological phase transition in ZrTe5

A phase transition between topologically distinct insulating phases involves closing and reopening of the bandgap. Close to this topological phase transition, the bulk energy spectrum is characterized by a massive Dirac dispersion, where the mass plays the role of bandgap. Here we report the observation of a non-monotonic strain dependence of resistivity and negative longitudinal magnetoresistance in ZrTe5, which is known to host massive Dirac Fermions in the bulk. This non-monotonic strain dependence is consistent with the closing and reopening of the bandgap at the Brillouin-zone center, indicative of a topological phase transition. This observation suggests that the topological state of ZrTe5 is highly sensitive to uniaxial stress. Our study presents a promising platform for continuous in-situ control of nontrivial topological properties of materials.

cond-mat.str-el