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Jovan Nelson

Publications and source records attributed to Jovan Nelson.

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Many-body benchmarking of DFT local-registry energetics in bilayer InSe

Density functional theory (DFT) is widely used to model twisted bilayers, but the accuracy of the local stacking energetics underlying such models remains uncertain. Here, we benchmark the local-registry landscape of bilayer InSe using diffusion quantum Monte Carlo (DMC). DFT predicts that AB, AAr, and ABr stackings, which share the same interfacial Se registry, are nearly degenerate within 1.5 meV/f.u. and exhibit nearly indistinguishable DFT charge-density responses. DMC instead separates these stackings by 8(5) and 41(4) meV/f.u., while the energy difference between the most stable and least stable registries reaches 60(7) meV/f.u.. These large energy separations show that the stacking energetics are not determined by the interfacial atomic motif alone but depend on the full registry and its associated many-body electronic response. More broadly, these results show that DFT-based moir\'e models can substantially underestimate local stacking-energy corrugation, with direct consequences for predicted structural relaxation, domain formation, and electronic reconstruction in twisted layered materials.

cond-mat.mtrl-sci

Layer-dependent optically-induced spin polarization in InSe

Optical control of spin in semiconductors has been pioneered using nanostructures of III-V and II-VI semiconductors, but the emergence of two-dimensional van der Waals materials offers an alternative low-dimensional platform for spintronic phenomena. Indium selenide (InSe), a group-III monochalcogenide van der Waals material, has shown promise for opto-electronics due to its high electron mobility, tunable direct bandgap, and quantum transport. There are predictions of spin-dependent optical selection rules suggesting potential for all-optical excitation and control of spin in a two-dimensional layered material. Despite these predictions, layer-dependent optical spin phenomena in InSe have yet to be explored. Here, we present measurements of layer-dependent optical spin dynamics in few-layer and bulk InSe. Polarized photoluminescence reveals layer-dependent optical orientation of spin, thereby demonstrating the optical selection rules in few-layer InSe. Spin dynamics are also studied in many-layer InSe using time-resolved Kerr rotation spectroscopy. By applying out-of-plane and in-plane static magnetic fields for polarized emission measurements and Kerr measurements, respectively, the $g$-factor for InSe was extracted. Further investigations are done by calculating precession values using a $\textbf{k} \cdot \textbf{p}$ model, which is supported by \textit{ab-initio} density functional theory. Comparison of predicted precession rates with experimental measurements highlights the importance of excitonic effects in InSe for understanding spin dynamics. Optical orientation of spin is an important prerequisite for opto-spintronic phenomena and devices, and these first demonstrations of layer-dependent optical excitation of spins in InSe lay the foundation for combining layer-dependent spin properties with advantageous electronic properties found in this material.

cond-mat.mtrl-sci