arXiv subjects

Juan Chamorro

Publications and source records attributed to Juan Chamorro.

8 recordsLinked to original sources

arXiv2026

Efficiently gate-tunable ferromagnetism in ferromagnetic semiconductor-Dirac semimetal p-n heterojunctions

We use molecular beam epitaxy to develop a gate tunable p-n heterojunction that interfaces a canonical Dirac semimetal, Cd$_3$As$_2$, and a ferromagnetic semiconductor, In$_{1-x}$Mn$_x$As, with perpendicular magnetic anisotropy. Measurements of the anomalous Hall effect in top-gated Cd$_3$As$_2$/In$_{1-x}$Mn$_x$As devices show that the ferromagnetic Curie temperature ($T_\mathrm{C}$) can be efficiently tuned using a modest gate voltage of $\sim 10$ V, corresponding to a sensitivity to electric field ($E$) of $ΔT_{\mathrm{C}}/ΔE \sim 10$ K/MV/cm). The voltage tuning of $T_\mathrm{C}$ saturates near the charge neutrality point of Cd$_3$As$_2$ and vanishes at positive gate voltage in appropriately designed heterostructures. This non-monotonic behavior cannot be explained solely by hole-mediated ferromagnetism in the In$_{1-x}$Mn$_x$As alone, suggesting an interaction between the Dirac semimetal and the ferromagnetic semiconductor. Our results identify Cd$_3$As$_2$/In$_{1-x}$Mn$_x$As heterojunctions as a potentially attractive platform for studying emergent phenomena arising from the interplay between broken symmetry, topology, and magnetism in a topological semimetal.

cond-mat.mes-hall↗

arXiv2025

Stability frontiers in the AM$_6$X$_6$ kagome metals: The LnNb$_6$Sn$_6$ (Ln:Ce-Lu,Y) family and density-wave transition in LuNb$_6$Sn$_6$

The kagome motif is a versatile platform for condensed matter physics, hosting rich interactions between magnetic, electronic, and structural degrees of freedom. In recent years, the discovery of a charge density wave (CDW) in the AV$_3$Sb$_5$ superconductors and structurally-derived bond density waves in FeGe and ScV$_6$Sn$_6$ have stoked the search for new kagome platforms broadly exhibiting density wave (DW) transitions. In this work, we evaluate the known AM$_6$X$_6$ chemistries and construct a stability diagram that summarizes the structural relationships between the $\approx$125 member family. Subsequently we introduce our discovery of the broader LnNb$_6$Sn$_6$ (Ln:Ce-Nd,Sm,Gd-Tm,Lu,Y) family of kagome metals and an analogous DW transition in LuNb$_6$Sn$_6$. Our X-ray scattering measurements clearly indicate a (1/3, 1/3, 1/3) ordering wave vector ($\sqrt{3}\times\sqrt{3}\times3$ superlattice) and diffuse scattering on half-integer $L$-planes. Our analysis of the structural data supports the ``rattling mode'' DW model proposed for ScV$_6$Sn$_6$ and paints a detailed picture of the steric interactions between the rare-earth filler element and the host Nb-Sn kagome scaffolding. We also provide a broad survey of the magnetic properties within the HfFe$_6$Ge$_6$-type LnNb$_6$Sn$_6$ members, revealing a number of complex antiferromagnetic and metamagnetic transitions throughout the family. This work integrates our new LnNb$_6$Sn$_6$ series of compounds into the broader AM$_6$X$_6$ family, providing new material platforms and forging a new route forward at the frontier of kagome metal research.

cond-mat.str-el↗

arXiv2024

Rashba spin splitting-induced topological Hall effect in a Dirac semimetal-ferromagnetic semiconductor heterostructure

We use a concerted theory-experiment effort to investigate the formation of chiral real space spin texture when the archetypal Dirac semimetal Cd$_3$As$_2$ is interfaced with In$_{1-x}$Mn$_x$As, a ferromagnetic semiconductor with perpendicular magnetic anisotropy. Our calculations reveal a nonzero off-diagonal spin susceptibility in the Cd$_3$As$_2$ layer due to the Rashba spin-orbit coupling from broken inversion symmetry. This implies the presence of a Dzyaloshinskii-Moriya interaction between local moments in the In$_{1-x}$Mn$_x$As layer, mediated by Dirac electrons in the vicinal Cd$_3$As$_2$ layer, potentially creating the conditions for a real space chiral spin texture. Using electrical magnetoresistance measurements at low temperature, we observe an emergent excess contribution to the transverse magneto-resistance whose behavior is consistent with a topological Hall effect arising from the formation of an interfacial chiral spin texture. This excess Hall voltage varies with gate voltage, indicating a promising electrostatically-tunable platform for understanding the interplay between the helical momentum space states of a Dirac semimetal and chiral real space spin textures in a ferromagnet.

cond-mat.mes-hall↗

arXiv2023

Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructure

Breaking time-reversal symmetry in a Dirac semimetal Cd$_3$As$_2$ through doping with magnetic ions or by the magnetic proximity effect is expected to cause a transition to other topological phases (such as a Weyl semimetal). To this end, we investigate the possibility of proximity-induced ferromagnetic ordering in epitaxial Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructures grown by molecular beam epitaxy. We report the comprehensive characterization of these heterostructures using structural probes (atomic force microscopy, x-ray diffraction, scanning transmission electron microscopy), angle-resolved photoemission spectroscopy, electrical magneto-transport, magnetometry, and polarized neutron reflectometry. Measurements of the magnetoresistance and Hall effect in the temperature range 2 K - 20 K show signatures that could be consistent with either a proximity effect or spin-dependent scattering of charge carriers in the Cd$_3$As$_2$ channel. Polarized neutron reflectometry sets constraints on the interpretation of the magnetotransport studies by showing that (at least for temperatures above 6 K) any induced magnetization in the Cd$_3$As$_2$ itself must be relatively small ($<$ 14 emu/cm$^3$).

cond-mat.mtrl-sci↗

arXiv2023

Influence of magnetic and electric fields on universal conductance fluctuations in thin films of the Dirac semi-metal Cd3As2

Time-reversal invariance and inversion symmetry are responsible for the topological band structure in Dirac semimetals. These symmetries can be broken by applying an external magnetic or electric field, resulting in fundamental changes to the ground state Hamiltonian and a topological phase transition. We probe these changes via the magnetic-field dependence and gate voltage-dependence of universal conductance fluctuations in top-gated nanowires of the prototypical Dirac semimetal Cd3As2. As the magnetic field is increased beyond the phase-breaking field, we find a factor of sqrt(2) reduction in the magnitude of the universal conductance fluctuations, in agreement with numerical calculations that study the effect of broken time reversal symmetry in a 3D Dirac semimetal. In contrast, the magnitude of the fluctuations increases monotonically as the chemical potential is gated away from the charge neutrality point. This effect cannot be attributed to broken inversion symmetry, but can be explained by Fermi surface anisotropy. The concurrence between experimental data and theory in our study provides unequivocal evidence that universal conductance fluctuations are the dominant source of intrinsic transport fluctuations in mesoscopic Cd3As2 devices and offers a promising general methodology for probing the effects of broken symmetry in topological quantum materials.

cond-mat.mes-hall↗

arXiv2022

Highly anisotropic magnetism in the vanadium-based kagome metal TbV6Sn6

RV6Sn6 (R=rare earth) compounds are appealing materials platforms for exploring the interplay between R-site magnetism and nontrivial band topology associated with the nonmagnetic vanadium-based kagome network. Here we present the synthesis and characterization of the kagome metal TbV6Sn6 via single-crystal x-ray diffraction, magnetization, transport, and heat capacity measurements. Magnetization measurements reveal strong, uniaxial magnetic anisotropy rooted in the alignment of Tb3Å moments in the interplane direction below 4.3(2) K. TbV6Sn6 exhibits multiband transport behavior with high mobilities of charge carriers, and our measurements suggest TbV6Sn6 is a promising candidate for hosting Chern gaps driven via the interplay between Tb-site magnetic order and the band topology of the V-site kagome network.

cond-mat.str-el↗

arXiv2022

Integer quantum Hall effect and enhanced g-factor in quantum confined Cd3As2 films

We investigate the integer quantum Hall effect in Cd3As2 thin films under conditions of strong to moderate quantum confinement (thicknesses of 10 nm, 12 nm, 15 nm). In all the films, we observe the integer quantum Hall effect in the spin-polarized lowest Landau level (filling factor ν = 1) and at spin-degenerate higher index Landau levels with even filling factors (ν = 2,4,6). With increasing quantum confinement, we also observe a lifting of the Landau level spin degeneracy at ν = 3, manifest as the emergence of an anomaly in the longitudinal and Hall resistivity. Tight-binding calculations show that the enhanced g-factor likely arises from a combination of quantum confinement and corrections from nearby subbands. We also comment on the magnetic field induced transition from an insulator to a quantum Hall liquid when the chemical potential is near the charge neutrality point.

cond-mat.mes-hall↗

arXiv2021

Spin and charge interconversion in Dirac semimetal thin films

We report spin-to-charge and charge-to-spin conversion at room temperature in heterostructure devices that interface an archetypal Dirac semimetal, Cd3As2, with a metallic ferromagnet, Ni0.80Fe0.20 (permalloy). The spin-charge interconversion is detected by both spin torque ferromagnetic resonance and ferromagnetic resonance driven spin pumping. Analysis of the symmetric and anti-symmetric components of the mixing voltage in spin torque ferromagnetic resonance and the frequency and power dependence of the spin pumping signal show that the behavior of these processes is consistent with previously reported spin-charge interconversion mechanisms in heavy metals, topological insulators, and Weyl semimetals. We find that the efficiency of spin-charge interconversion in Cd3As2/permalloy bilayers can be comparable to that in heavy metals. We discuss the underlying mechanisms by comparing our results with first principles calculations.

cond-mat.mtrl-sci↗